MCP1206FTE800
Abstract: MCP1206FTE900 MCP0805FTE601
Text: MULTILAYER FERRITE MCP POWER BEADS SPEER ELECTRONICS, INC. MULTI LAYER FERRITE POWER BEADS • Designed to reduce noise at frequencies • Standard EIA Packages: 0603, 0805, 1206 • Nickel Barrier with solder overcoat for excellent soderability • Magnetically Shielded
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SJ 2518
Abstract: 100S 4000M CT42 104z
Text: J&P 金沛 SHJINPEI ELECTRONICS CO.，LTD 上海金沛电子有限公司 ADDRESS：Room 102,no.22,2518# hunan road,shanghai,china 中国 上海市沪南路 2518 栋 22 号 102 室 TEL：+008621-68062072 68062073 FAX：+008621-68062073-808 APPROVAL SHEET （ 承 认 书）
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851000h
SJ/10211-91
SJ/T10211-91
CC42class1
SJ 2518
100S
4000M
CT42
104z
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ram 2015
Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Text: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9804
ram 2015
M93C56
M27256
M2764A
M27C64A
QRR9804
M29F105
Part Marking STMicroelectronics flash memory
M87C257
m29f002
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BV-1 501
Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
Text: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9704
BV-1 501
mk48t08
SGS M27C256
mk48t18
st microelectronics datecode M48T35
st microelectronics datecode
M27C256 SGS-THOMSON
ST25C16
CP 1005
marking 339 st microelectronics
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MK48T08
Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9802
MK48T08
mk48t18
M27128A
M2716
M2732A
M2764A
QRR9802
Marking STMicroelectronics m24c32
m28c64d
M24C64
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PBGA 256 reflow profile
Abstract: bga 196 land pattern Intel reflow soldering profile BGA BGA PACKAGE TOP MARK intel BGA PACKAGE thermal profile A5825-01 BGA and QFP Package BGA OUTLINE DRAWING bga Shipping Trays land pattern BGA 0.75
Text: Plastic Ball Grid Array PBGA Packaging 14.1 14 Introduction The plastic ball grid array (PBGA) has become one of the most popular packaging alternatives for high I/O devices in the industry. Its advantages over other high leadcount (greater than ~208 leads)
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Diode SJ
Abstract: 100PF 100S 4000M T-10211 104 K capacitor 331 k capacitor capacitor 104 100v ceramic capacitor 104
Text: RoHS Compliant Axial Multilayer Ceramic Capacitor Ⅰ Features Wide capacitance, temperature, voltage and tolerance range; Industry sizes; Tape and Reel available for auto placement. Ⅱ、 General Characteristics Capacitance Range Temperature Coefficient
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30PPm/
60PPm/
10000M
4000M
100VDC
100PF=
000PF=
Diode SJ
100PF
100S
4000M
T-10211
104 K capacitor
331 k capacitor
capacitor 104 100v
ceramic capacitor 104
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Capacitors
Abstract: CC41 CT41 Multilayer Chip Ceramic Capacitors CT41 Ceramic Capacitors 104 Ceramic chip Capacitors 104 B 103 Potentiometers 684 k 100 100S 4000M
Text: Elecsound Ceramic Capacitors CC41 CT41 Multilayer Chip Ceramic Capacitors Features The choice of dielectric is largely determined by the temperature stability required: NPO COG Ultra stable ClassⅠdielectric, with negligible dependence of electrical properties on temperature,
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Untitled
Abstract: No abstract text available
Text: MULTILAYER FERRITE MCI INDUCTOR SPEER ELECTRONICS, INC. MULTI LAYER FERRITE INDUCTORS • Monolithic structure for closed magnetic path elimates crosstalk and provides high reliability in a wide range of temperature and humidity ranges • Standard EIA Packages: 0603, 0805, 1206
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INDUCTOR CHIP FERRITE BEAD 0805
Abstract: No abstract text available
Text: MULTILAYER FERRITE MCI INDUCTOR SPEER ELECTRONICS, INC. MULTI LAYER FERRITE INDUCTORS • Monolithic structure for closed magnetic path elimates crosstalk and provides high reliability in a wide range of temperature and humidity ranges • Standard EIA Packages: 0603, 0805, 1206
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MIL-STD-202f
Abstract: MIL-STD-202f 107G 103A 208H 210E JIS-C-5202-6
Text: TEPRO TYPE “TT” ELECTRO TECHNIK ENVIRONMENTAL CHARACTERISTICS: ITEM SPECIFICATIONS TEST METHOD JIS-C-5205-5.5 SHORT TIME OVERLOAD ± 0.5% + 0.05Ω RCWV*2.5 or max overload voltage, 5 seconds INSULATION RESISTANCE >1000mΩ MIL-STD-202F method 302 Apply 100VDC for 1 minute
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JIS-C-5205-5
1000m
MIL-STD-202F
100VDC
JIS-C-5202-7
with020
MIL-STD-202f 107G
103A
208H
210E
JIS-C-5202-6
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Intel reflow soldering profile BGA
Abstract: A5832 JEDEC bga 63 tray Intel BGA cte table epoxy substrate BGA PROFILING A4470-01 Lead Free reflow soldering profile BGA land pattern BGA 196 a5764
Text: Ball Grid Array BGA Packaging 14.1 14 Introduction The plastic ball grid array (PBGA) has become one of the most popular packaging alternatives for high I/O devices in the industry. Its advantages over other high leadcount (greater than ~208 leads) packages are many. Having no leads to bend, the PBGA has greatly reduced coplanarity problems
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Untitled
Abstract: No abstract text available
Text: MULTILAYER FERRITE MCI INDUCTOR SPEER ELECTRONICS, INC. MULTI LAYER FERRITE INDUCTORS • Monolithic structure for closed magnetic path elimates crosstalk and provides high reliability in a wide range of temperature and humidity ranges • Standard EIA Packages: 0603, 0805, 1206
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Capacitors
Abstract: Axial Leads Multilayer Ceramic Capacitors Ceramic Capacitors 104 104z sj 222 10nF 50V X7R ceramic axial capacitors Diode SJ 100S 4000M
Text: Elecsound Ceramic Capacitors CC42 CT42 Axial Leads Multilayer Ceramic Capacitors Features Wide capacitance, temperature , voltage and tolerance range; Industry sizes; Tape and Reel available for autoplacement. Size Code Capacitance and Voltage Size Dimensions mm
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SJ/T10211-91
Capacitors
Axial Leads Multilayer Ceramic Capacitors
Ceramic Capacitors 104
104z
sj 222
10nF 50V X7R
ceramic axial capacitors
Diode SJ
100S
4000M
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M96S66
Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
Text: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9903
M96S66
tsop 3846
ST M27C256B PART MARKING
M27128
M2764A
QRR9903
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M27128
Abstract: M2764A QRR9902
Text: QRR9902 QUALITY & RELIABILITY REPORT July 1998 to June 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9902
M27128
M2764A
QRR9902
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25X25
Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
Text: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9904
25X25
Marking STMicroelectronics m27c256
QRR9904
ST16
M27C256
M27C320
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M25C
Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
Text: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0002
M25C
Marking STMicroelectronics m27c256
QRR0001
QRR0002
ST16
M29W160
M275
M27C512 marking
QRR000
ST M27C256B PART MARKING
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EIA 549 Class 130B transformer
Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.
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000pF
000pF
0201ZD103KAT2A
0201ZC103KAT2A
0201YC101KAT2A
0201YC271KAT2A
0201YC471KAT2A
02013A1R0CAT2A
02013A4R7CAT2A
02013A100JAT2A
EIA 549 Class 130B transformer
mcf 300.04
capacitor 225 35k 844 SMD
av 1.40.00 mkt x2 .01uf
NTC 20K honeywell
1000 rpm dc motor 12v 100watt
BO 680Y
clarostat POTENTIOMETER 73JA
SMD MARKING CODE 503b
03028BR
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MIL-STD-202f
Abstract: TEPRO JIS 0402 208H 210E JIS-C-5202-6
Text: TEPRO TYPE “TR” ELECTRO TECHNIK ENVIRONMENTAL CHARACTERISTICS: ITEM SPECIFICATIONS TEST METHOD JIS-C-5205-5.5 SHORT TIME OVERLOAD ± 0.5% + 0.05Ω RCWV*2.5 or max overload voltage, 5 seconds INSULATION RESISTANCE >1000mΩ MIL-STD-202F method 302 Apply 100VDC for 1 minute
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JIS-C-5205-5
1000m
MIL-STD-202F
100VDC
JIS-C-5202-7
TEPRO
JIS 0402
208H
210E
JIS-C-5202-6
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103A
Abstract: MIL-STD-202f 208H 210E JIS-C-5202-6 soderability
Text: TEPRO TYPE “TU” ELECTRO TECHNIK ENVIRONMENTAL CHARACTERISTICS: ITEM SPECIFICATIONS TEST METHOD JIS-C-5205-5.5 SHORT TIME OVERLOAD ± 0.5% + 0.05Ω RCWV*2.5 or max overload voltage, 5 seconds INSULATION RESISTANCE >1000mΩ MIL-STD-202F method 302 Apply 100VDC for 1 minute
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JIS-C-5205-5
1000m
MIL-STD-202F
100VDC
JIS-C-5202-7
wiSTD-202F
103A
208H
210E
JIS-C-5202-6
soderability
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ST M27C256B PART MARKING
Abstract: M29W080 QRR0003 stmicroelectronics datecode m27C256 Marking STMicroelectronics m27c256 m29w160 reliability report M29W160 QRR000 QRR0001 ST16
Text: QRR0003 QUALITY & RELIABILITY REPORT October 1999 September 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0003
ST M27C256B PART MARKING
M29W080
QRR0003
stmicroelectronics datecode m27C256
Marking STMicroelectronics m27c256
m29w160 reliability report
M29W160
QRR000
QRR0001
ST16
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BV-1
Abstract: M93C56 M27256 M2764A QRR9901 Solutions-76 Marking STMicroelectronics m27c256
Text: QRR9901 QUALITY & RELIABILITY REPORT April 1998 to March 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9901
BV-1
M93C56
M27256
M2764A
QRR9901
Solutions-76
Marking STMicroelectronics m27c256
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Untitled
Abstract: No abstract text available
Text: C.10 .26 'r r i . .32 .045 '' 1. SAMPLE ARE TO BE SUBMITTED FOR ENG‘G APPROVAL PRODUCTION IS TO BE IN ACCORDANCE WITH APPROVED SAMPLE. 2. MAX INITIAL INSERTION FORCE USING A 2 MICRO INCH POLISHED .128 t.0005 DIA. PIN WITH .062 RADIUS SHALL NOT EXCEED 12 LBS.
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SX-151F
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