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    SOT 227B Search Results

    SOT 227B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    SOT 227B Price and Stock

    IXYS Corporation IXTN400N15X4

    MOSFET Modules MBLOC 150V 400A N-CH X4CLASS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXTN400N15X4 Tube 600 10
    • 1 -
    • 10 $41.76
    • 100 $36.54
    • 1000 $36.54
    • 10000 $36.54
    Buy Now

    IXYS Corporation IXFN360N10T

    MOSFET Modules 360 Amps 100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFN360N10T Tube 320 10
    • 1 -
    • 10 $18.98
    • 100 $17.76
    • 1000 $17.76
    • 10000 $17.76
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    IXYS Corporation IXFN200N10P

    MOSFET Modules 200 Amps 100V 0.0075 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFN200N10P Tube 300 10
    • 1 -
    • 10 $20.19
    • 100 $19.02
    • 1000 $19.02
    • 10000 $19.02
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    IXYS Corporation IXGN100N170

    IGBTs HIGH VOLT NPT IGBTS 1700V 95A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXGN100N170 Tube 300 10
    • 1 -
    • 10 $45.27
    • 100 $45.27
    • 1000 $45.27
    • 10000 $45.27
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    IXYS Corporation IXFN140N20P

    MOSFET Modules 140 Amps 200V 0.018 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFN140N20P Tube 300 10
    • 1 -
    • 10 $19.11
    • 100 $18.03
    • 1000 $18.03
    • 10000 $18.03
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    SOT 227B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RTO-B

    Abstract: No abstract text available
    Text: RTO-B Bauform SOT 227B ISOTOP / Size SOT 227B (ISOTOP) ISA-PLAN - Präzisionswiderstände / Precision resistors Technische Daten / technical data Widerstandswerte Resistance values 1, 2, 5, 10, 15, 20, 33, 50, 68, 100, 150, 200, 330, 470 mOhm Toleranz


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    PDF MIL-STD-202 120dB RTO-B-2013-05-16 D-35683 RTO-B

    Untitled

    Abstract: No abstract text available
    Text: RTO-A Bauform SOT 227B ISOTOP / Size SOT 227B (ISOTOP) ISA-PLAN - Präzisionswiderstände / Precision resistors Technische Daten / technical data Widerstandswerte Resistance values 0.5, 1, 2, 3.3, 5, 10, 15, 20, 33, 47, 50, 100 Ohm Toleranz Tolerance 1 %, 5 % < 10 Ohm


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    PDF MIL-STD-202 120dB RTO-A-2013-05-16 D-35683

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


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    PDF IXXN100N60B3H1 10-30kHz 150ns OT-227B, E153432 IF110 100N60B3 12-01-11-B

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    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR


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    PDF IXXN200N60B3H1 IC110 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3

    DMA150YA1600NA

    Abstract: dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA
    Text: DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


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    PDF DMA150YA1600NA OT-227B 60747and 20130128a DMA150YA1600NA dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.30V 50ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


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    PDF IXYN100N65C3H1 IC110 20-60kHz OT-227B, E153432 IF110 100N65C3 0-24-13-A

    Untitled

    Abstract: No abstract text available
    Text: MCO100-12io1 Thyristor VRRM = 1200 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO100-12io1 OT-227B 60747and 20140123a

    CLA110MB1200NA

    Abstract: No abstract text available
    Text: CLA110MB1200NA High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.04 V AC Controlling 1~ full-controlled Part number CLA110MB1200NA Backside: Isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● AC controller for line frequency


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    PDF CLA110MB1200NA OT-227B 60747and 20130408b CLA110MB1200NA

    IXXN110N65C4H1

    Abstract: E8 55A DIODE ixxn110n65c z 683
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings


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    PDF 20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683

    ixxn110n65

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


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    PDF 10-30kHz IXXN110N65B4H1 IC110 OT-227B, E153432 IF110 50/60Hz VCE00 110N65B4H1 ixxn110n65

    DMA150YC1600NA

    Abstract: DMA150YA1600NA
    Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


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    PDF DMA150YC1600NA OT-227B 60747and 20130128a DMA150YC1600NA DMA150YA1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO100-16io1 Thyristor VRRM = 1600 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO100-16io1 OT-227B 60747and 20140123a

    IXYN100N120C3H1

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR


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    PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1

    IXGN72N60C3H1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGN72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed low Vsat PT IGBTs 40-100 kHz switching = = ≤£ = 600V 52A 2.5V 55ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES


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    PDF IXGN72N60C3H1 IC110 OT-227B, E153432 72N60C3 0-16-08-A IXGN72N60C3H1

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


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    PDF DMA150YC1600NA OT-227B 60747and 20130128a DMA150YA1600NA DMA150YC1600NA

    CMA80PD1600NA

    Abstract: No abstract text available
    Text: CMA80PD1600NA advanced Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1.29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF CMA80PD1600NA OT-227B 60747and CMA80PD1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO150-12io1 Thyristor VRRM = 1200 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO150-12io1 OT-227B 60747and 20140123a

    Untitled

    Abstract: No abstract text available
    Text: MCO150-16io1 Thyristor VRRM = 1600 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO150-16io1 OT-227B 60747and 20140123a

    DSA300I45NA

    Abstract: No abstract text available
    Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I45NA OT-227B 60747and 20120907a DSA300I45NA

    Untitled

    Abstract: No abstract text available
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 300 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I200NA OT-227B 60747and 20120907a

    DSA300I200NA

    Abstract: No abstract text available
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I200NA OT-227B 60747and 20120907a DSA300I200NA

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYN120N120C3 1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 120A 3.20V 96ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions E Maximum Ratings VCES


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    PDF IXYN120N120C3 IC110 OT-227B, E153432 120N120C3 9P-C91)

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline


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    PDF OT-227B 60747and DMA150YA1600NA DMA150YC1600NA

    CLA100PD1200NA

    Abstract: CLA60PD1200NA
    Text: CLA60PD1200NA High Efficiency Thyristor VRRM = 2x 1200 V I TAV = 60 A VT = 1.09 V Phase leg Part number CLA60PD1200NA Backside: Isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF CLA60PD1200NA OT-227B 60747and 20130408b CLA100PD1200NA CLA60PD1200NA