ZXM41N0F
Abstract: No abstract text available
Text: ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR
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ZXM41N0F
ZXM41N0F
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sot23 DIODE marking AV
Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD258
400mA
-200mA
sot23 DIODE marking AV
marking D58
FLLD258
FLLD261
FLLD263
330 marking diode
DSA003688
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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330 marking diode
Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD261
400mA
-200mA
330 marking diode
marking SOT23 V 4 diode
FLLD258
FLLD261
FLLD263
MARKING P8A
DSA003670
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FMMTA42
Abstract: FMMTA92 TS16949 semiconductors 3E
Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage
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FMMTA42
FMMTA42
FMMTA92
D-81541
FMMTA92
TS16949
semiconductors 3E
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91A SOT23
Abstract: design ideas FMMT591 FMMT491A TS16949
Text: A Product Line of Diodes Incorporated FMMT591 SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol VCBO
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FMMT591
-FMMT491A
D-81541
TX75248,
91A SOT23
design ideas
FMMT591
FMMT491A
TS16949
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BAW156
Abstract: BCW66
Text: BAW156. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration BAW156 ! , , Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW156.
BAW156
BAW156
BCW66
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smd transistor marking f10
Abstract: transistor smd marking BA sot-23 sot-23 Marking N2 SMD TRANSISTOR MARKING N2 CMBT200 CMBT200A MARKING N2 transistor smd marking BA
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 Designed for General Purpose Amplifier Applications.
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ISO/TS16949
CMBT200
CMBT200A
25deg
C-120
smd transistor marking f10
transistor smd marking BA sot-23
sot-23 Marking N2
SMD TRANSISTOR MARKING N2
CMBT200
CMBT200A
MARKING N2
transistor smd marking BA
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transistor smd marking NE
Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
transistor smd marking BA RE
SOT23 NE
CMBT847
transistor smd marking PE
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transistor smd marking PE
Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT857
100uA,
C-120
transistor smd marking PE
transistor smd marking BA
transistor smd marking BA sot-23
CMBT857
pe sot23
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transistor smd marking NE
Abstract: sot-23 marking NE CMBT847 MARKING NE SOT23 MA COM marking
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
sot-23 marking NE
CMBT847
MARKING NE
SOT23 MA COM marking
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smd transistor marking PA
Abstract: "marking PA" CMBA857
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA857
100uA,
C-120
smd transistor marking PA
"marking PA"
CMBA857
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NB smd transistor
Abstract: NB SMD SOT-23 NB SOT-23 NPN transistor smd marking nb CMBA847 NB 40 smd transistor smd transistor MARKING nb sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA847
100uA,
C-120
NB smd transistor
NB SMD SOT-23
NB SOT-23 NPN
transistor smd marking nb
CMBA847
NB 40 smd transistor
smd transistor MARKING nb sot23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA857
100uA,
C-120
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CMBA847
Abstract: transistor smd marking BA sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA847
100uA,
C-120
CMBA847
transistor smd marking BA sot-23
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s5C SOT23
Abstract: mar 820
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
EHB00137
Mar-10-2004
s5C SOT23
mar 820
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BAV199
Abstract: BAV199F BAV 199 SOT23
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary
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BAV199.
BAV199
BAV199F
BAV199F*
BAV199,
BAV199F,
EHB00086
Mar-10-2004
BAV199
BAV199F
BAV 199 SOT23
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transistor smd marking NE
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
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Comchip Technology
Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand
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CDA3S06-G
OT23-6)
MDS0903002A
Comchip Technology
CDA3S06-G
SOT23 NE
SS MARKING sot23
TOP marking sot23-6
20 sot23-6 esd
diode network 16
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NB smd transistor
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA847
100uA,
C-120
NB smd transistor
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electronic schematic
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA3S06L Voltage: 8 Volts Current: 50 mA Package SOT23-6 Feature Marking “ CDA3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and
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CDA3S06L
OT23-6)
MDS0903002A
electronic schematic
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BAW56 application note
Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Text: BAW56 Silicon Switching Diode Array 3 For high-speed switching applications Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR
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BAW56
VPS05161
EHA07006
EHB00091
EHB00092
Jul-31-2001
EHB00093
BAW56 application note
A1s sot23
BAW56
V6010
ta1504
A2 SOT23
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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SOT-143 MARKING 550
Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
Text: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8
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OT143
S858TA1
S858TA3
S868T
S860T
S872T
OT143
BFP67
BFP92A
BFP93A
SOT-143 MARKING 550
S852T
S868
T0-50
TEMIC S868T
BFP183T
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