330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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sot23 DIODE marking AV
Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD258
400mA
-200mA
sot23 DIODE marking AV
marking D58
FLLD258
FLLD261
FLLD263
330 marking diode
DSA003688
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330 marking diode
Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD261
400mA
-200mA
330 marking diode
marking SOT23 V 4 diode
FLLD258
FLLD261
FLLD263
MARKING P8A
DSA003670
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smd transistor marking f10
Abstract: transistor smd marking BA sot-23 sot-23 Marking N2 SMD TRANSISTOR MARKING N2 CMBT200 CMBT200A MARKING N2 transistor smd marking BA
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 Designed for General Purpose Amplifier Applications.
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ISO/TS16949
CMBT200
CMBT200A
25deg
C-120
smd transistor marking f10
transistor smd marking BA sot-23
sot-23 Marking N2
SMD TRANSISTOR MARKING N2
CMBT200
CMBT200A
MARKING N2
transistor smd marking BA
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transistor smd marking NE
Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
transistor smd marking BA RE
SOT23 NE
CMBT847
transistor smd marking PE
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transistor smd marking PE
Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT857
100uA,
C-120
transistor smd marking PE
transistor smd marking BA
transistor smd marking BA sot-23
CMBT857
pe sot23
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smd transistor marking PA
Abstract: "marking PA" CMBA857
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA857
100uA,
C-120
smd transistor marking PA
"marking PA"
CMBA857
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT857
100uA,
C-120
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CMBA847
Abstract: transistor smd marking BA sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA847
100uA,
C-120
CMBA847
transistor smd marking BA sot-23
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BAW56 application note
Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Text: BAW56 Silicon Switching Diode Array 3 For high-speed switching applications Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR
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BAW56
VPS05161
EHA07006
EHB00091
EHB00092
Jul-31-2001
EHB00093
BAW56 application note
A1s sot23
BAW56
V6010
ta1504
A2 SOT23
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transistor smd marking NE
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
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BAV70
Abstract: No abstract text available
Text: BAV70 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70
VPS05161
EHA07004
EHB00066
EHB00067
Jul-31-2001
EHB00068
BAV70
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transistor smd marking BA RE
Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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CMBT2484
C-120
transistor smd marking BA RE
transistor smd marking PE
FR MARKING SMD TRANSISTOR
CMBT2484
transistor smd marking BA sot-23
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TRANSISTOR S1d
Abstract: BCW66 SMBTA92
Text: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBTA42/MMBTA42
SMBTA92
SMBTA42/MMBTA42
VPS05161
TRANSISTOR S1d
BCW66
SMBTA92
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BCV26
Abstract: BCV27 BCV46 BCV47
Text: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs
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BCV26,
BCV46
BCV27,
BCV47
BCV26
BCV26
BCV27
BCV46
BCV47
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BCR119
Abstract: No abstract text available
Text: BCR119 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR119 WKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR119
VPS05161
EHA07264
Jul-16-2001
BCR119
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BCR196
Abstract: No abstract text available
Text: BCR196 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47kW, R2=22kW 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR196 WXs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR196
VPS05161
EHA07183
Jul-20-2001
BCR196
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BCR119
Abstract: No abstract text available
Text: BCR119 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07264 Type Marking BCR119 WKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR119
VPS05161
EHA07264
Nov-29-2001
BCR119
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BCR569
Abstract: No abstract text available
Text: BCR569 PNP Silizium Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR569
VPS05161
EHA07180
Dec-13-2001
BCR569
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BCR569
Abstract: No abstract text available
Text: BCR569 PNP Silizium Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR569
VPS05161
EHA07180
Jul-23-2001
BCR569
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BCR169
Abstract: No abstract text available
Text: BCR169 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR169 WSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR169
VPS05161
EHA07180
Dec-13-2001
BCR169
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BCR169
Abstract: No abstract text available
Text: BCR169 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR169 WSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR169
VPS05161
EHA07180
Jul-16-2001
BCR169
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BCR158
Abstract: No abstract text available
Text: BCR158 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR158 WIs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR158
VPS05161
EHA07183
Nov-29-2001
BCR158
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BCR533
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR533 XCs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR533
VPS05161
EHA07184
Jun-29-2001
BCR533
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