Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT23-3 MARKING 40 Search Results

    SOT23-3 MARKING 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23-3 MARKING 40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    330 marking diode

    Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
    Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60


    Original
    PDF FLLD258 FLLD261 FLLD263 400mA -200mA 330 marking diode FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63

    sot23 DIODE marking AV

    Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
    Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 – SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL – D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current


    Original
    PDF FLLD258 400mA -200mA sot23 DIODE marking AV marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688

    330 marking diode

    Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
    Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 – SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL – P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current


    Original
    PDF FLLD261 400mA -200mA 330 marking diode marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670

    smd transistor marking f10

    Abstract: transistor smd marking BA sot-23 sot-23 Marking N2 SMD TRANSISTOR MARKING N2 CMBT200 CMBT200A MARKING N2 transistor smd marking BA
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 Designed for General Purpose Amplifier Applications.


    Original
    PDF ISO/TS16949 CMBT200 CMBT200A 25deg C-120 smd transistor marking f10 transistor smd marking BA sot-23 sot-23 Marking N2 SMD TRANSISTOR MARKING N2 CMBT200 CMBT200A MARKING N2 transistor smd marking BA

    transistor smd marking NE

    Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    PDF CMBT847 100uA, C-120 transistor smd marking NE transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE

    transistor smd marking PE

    Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    PDF CMBT857 100uA, C-120 transistor smd marking PE transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23

    smd transistor marking PA

    Abstract: "marking PA" CMBA857
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    PDF CMBA857 100uA, C-120 smd transistor marking PA "marking PA" CMBA857

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    PDF CMBT857 100uA, C-120

    CMBA847

    Abstract: transistor smd marking BA sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    PDF CMBA847 100uA, C-120 CMBA847 transistor smd marking BA sot-23

    BAW56 application note

    Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
    Text: BAW56 Silicon Switching Diode Array 3  For high-speed switching applications  Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR


    Original
    PDF BAW56 VPS05161 EHA07006 EHB00091 EHB00092 Jul-31-2001 EHB00093 BAW56 application note A1s sot23 BAW56 V6010 ta1504 A2 SOT23

    transistor smd marking NE

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original
    PDF CMBT847 100uA, C-120 transistor smd marking NE

    BAV70

    Abstract: No abstract text available
    Text: BAV70 Silicon Switching Diode Array 3  For high-speed switching applications  Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original
    PDF BAV70 VPS05161 EHA07004 EHB00066 EHB00067 Jul-31-2001 EHB00068 BAV70

    transistor smd marking BA RE

    Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


    Original
    PDF CMBT2484 C-120 transistor smd marking BA RE transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23

    TRANSISTOR S1d

    Abstract: BCW66 SMBTA92
    Text: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original
    PDF SMBTA42/MMBTA42 SMBTA92 SMBTA42/MMBTA42 VPS05161 TRANSISTOR S1d BCW66 SMBTA92

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs


    Original
    PDF BCV26, BCV46 BCV27, BCV47 BCV26 BCV26 BCV27 BCV46 BCV47

    BCR119

    Abstract: No abstract text available
    Text: BCR119 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR119 WKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original
    PDF BCR119 VPS05161 EHA07264 Jul-16-2001 BCR119

    BCR196

    Abstract: No abstract text available
    Text: BCR196 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=47kW, R2=22kW 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR196 WXs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original
    PDF BCR196 VPS05161 EHA07183 Jul-20-2001 BCR196

    BCR119

    Abstract: No abstract text available
    Text: BCR119 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07264 Type Marking BCR119 WKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original
    PDF BCR119 VPS05161 EHA07264 Nov-29-2001 BCR119

    BCR569

    Abstract: No abstract text available
    Text: BCR569 PNP Silizium Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original
    PDF BCR569 VPS05161 EHA07180 Dec-13-2001 BCR569

    BCR569

    Abstract: No abstract text available
    Text: BCR569 PNP Silizium Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original
    PDF BCR569 VPS05161 EHA07180 Jul-23-2001 BCR569

    BCR169

    Abstract: No abstract text available
    Text: BCR169 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR169 WSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original
    PDF BCR169 VPS05161 EHA07180 Dec-13-2001 BCR169

    BCR169

    Abstract: No abstract text available
    Text: BCR169 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR169 WSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original
    PDF BCR169 VPS05161 EHA07180 Jul-16-2001 BCR169

    BCR158

    Abstract: No abstract text available
    Text: BCR158 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR158 WIs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original
    PDF BCR158 VPS05161 EHA07183 Nov-29-2001 BCR158

    BCR533

    Abstract: No abstract text available
    Text: BCR533 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR533 XCs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original
    PDF BCR533 VPS05161 EHA07184 Jun-29-2001 BCR533