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    SOT323 Search Results

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    SOT323 Price and Stock

    Nexperia BAT54CW,115

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT323/SC-70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54CW,115 Reel 249,000 3,000
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    • 10000 $0.0138
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    Nexperia BSS84AKW,115

    MOSFETs SOT323 P CHAN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84AKW,115 Reel 147,000 3,000
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    Nexperia BSS138PW,115

    MOSFETs SOT323 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS138PW,115 Reel 138,000 3,000
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    ROHM Semiconductor RJU003N03FRAT106

    MOSFETs 2.5V Drive N-Ch AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RJU003N03FRAT106 Reel 105,000 3,000
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    Nexperia BAT54SW,115

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT323/SC-70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54SW,115 Reel 102,000 3,000
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    SOT323 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT323 NXP Semiconductors Footprint for reflow soldering SOT323 Original PDF
    SOT323 NXP Semiconductors Footprint for wave soldering SOT323 Original PDF
    SOT323 NXP Semiconductors Plastic surface-mounted package; 3 leads Original PDF
    SOT323 STMicroelectronics SOT323 - ASD & DISCRETES - TOURS Original PDF
    SOT323 Zetex Semiconductors Surface mounted, 3 pin package Original PDF
    SOT323-5L STMicroelectronics EMI FILTER, INCLUDING ESD PROTECTION Original PDF
    SOT323-6L STMicroelectronics LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE Original PDF
    SOT323 Package Zetex Semiconductors Package Dimensions Original PDF

    SOT323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS138PW

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
    Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using


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    PDF BSS138PW OT323 SC-70) AEC-Q101 771-BSS138PW115 BSS138PW TRANSISTOR SMD CODE PACKAGE SOT323

    2N7002BKW

    Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


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    PDF 2N7002BKW OT323 SC-70) AEC-Q101 771-2N7002BKW115 2N7002BKW 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA

    TRANSISTOR SMD CODE PACKAGE SOT323

    Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
    Text: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.


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    PDF PMST3906 OT323 SC-70) PMST3904. PMST3906 TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp

    BAP70-04W

    Abstract: 04W2
    Text: BAP70-04W Silicon PIN diode Rev. 02 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. 1.2 Features • High voltage current control RF resistor for RF attenuators


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    PDF BAP70-04W OT323 sym015 sot323 BAP70-04W 04W2

    wave footprint

    Abstract: No abstract text available
    Text: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 3 leads SOT323 4.6 2.575 1.425 3x 1.8 3.65 2.1 09 (2×) preferred transport direction during soldering solder land solder resist occupied area Dimensions in mm


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    PDF OT323 sot323 wave footprint

    STB7101

    Abstract: GP 113
    Text: STB7101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER • OPERATING FREQUENCY 900-1900MHz • OUTPUT POWER 9.8dBm typ. @ 900MHz 7.5dBm typ. @ 1900MHz • POWER GAIN GP = 20.3dB typ. @ 900MHz GP = 20.5dB typ. @ 1900MHz SOT323-6L SC70 ORDER CODE STB7101 BRANDING


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    PDF STB7101 900-1900MHz 900MHz 1900MHz OT323-6L STB7101, 900MHz STB7101 GP 113

    BC817

    Abstract: No abstract text available
    Text: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound


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    PDF BC817-16W/-25W/-40W BC807-xxW OT323 AEC-Q101 J-STD-020 MIL-STD-202, DS30575 BC817

    BCR133W

    Abstract: VSO05561
    Text: BCR133W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR133W VSO05561 EHA07184 OT323 Nov-29-2001 BCR133W VSO05561

    BCR142W

    Abstract: VSO05561
    Text: BCR142W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR142W VSO05561 EHA07184 OT323 Nov-29-2001 BCR142W VSO05561

    BCR108W

    Abstract: VSO05561
    Text: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561

    BCR112W

    Abstract: VSO05561
    Text: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR112W VSO05561 EHA07184 OT323 Nov-29-2001 BCR112W VSO05561

    BCR198W

    Abstract: VSO05561 MARKING WRS
    Text: BCR198W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR198W VSO05561 EHA07183 OT323 Dec-13-2001 BCR198W VSO05561 MARKING WRS

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZUMT491 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT323 Features Mechanical Data • • • • • • • • • • • • Low saturation voltage 500mW power dissipation IC = 1A high Continuous Current Ideally suited for space / weight critical applicatons


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    PDF ZUMT491 OT323 500mW AEC-Q101 OT323 J-STD-020 MIL-STD-202, DS33334

    Untitled

    Abstract: No abstract text available
    Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


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    PDF BAS70-07S BAS70-08S OT323-6L BAS70-08S

    1010 l4

    Abstract: ULOBA STB7102 STB7102TR
    Text: STB7102 0.5/2.5 GHz UHF LO BUFFER AMPLIFIER • OPERATING FREQUENCY 500-2500MHz • LOW CURRENT CONSUMPTION • EXCELLENT ISOLATION • ULTRA MINIATURE SOT323-6L PACKAGE SOT323-6L SC70 APPLICATIONS • BUFFER AMPLIFIER FOR 0.5/2.5 GHz APPLICATIONS ORDER CODE


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    PDF STB7102 500-2500MHz OT323-6L OT323-6L STB7102TR STB7102, STB7102 1010 l4 ULOBA STB7102TR

    wns marking

    Abstract: BCR185W VSO05561
    Text: BCR185W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323


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    PDF BCR185W VSO05561 EHA07183 OT323 Jul-20-2001 wns marking BCR185W VSO05561

    BFT92

    Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures


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    PDF BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6

    RA SOT323

    Abstract: No abstract text available
    Text: ZUMD70-04 ZUMD70-05 SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ISSUE 1 - NO VEMBER 1998 Q_ 1 1 M M 3 2 2 3 SERIES PAIR COMMON CATHODE Device Type: ZUMD70-04 Device Type: ZUMD70-05 Partm arking Detail: D94 Partmarking Detail:


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    PDF OT323 ZUMD70-04 ZUMD70-05 ZUMD70-05 ZC2800E RA SOT323

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSU E 1 - DECEMBER 1998_ FEATU RES * A v a la n c h e m ode operation * 50 A Peak a v a la n ch e current * Lo w in d u ctan ce p a cka g in g A P P L IC A T IO N S * La se r LE D d rive rs


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    PDF OT323 ZUMT413 20MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 1- NOVEMBER 1998 FEATURES * H igh f T=900M H z M in * M ax capacitance=1pF * L o w noise 4.5dB PARTM ARKING DETAIL -T 6 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT 20 V Collector-Base Voltage


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    PDF OT323 100MHz 200MHz 200MHz ZUMT5179

    vc 125a

    Abstract: No abstract text available
    Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT717 ISSUE 1 - SEPTEMBER 1998 _ -FEATURES 500mW POWER DISSIPATION * * * * lc C O N T I.5 A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed)


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    PDF Super323TM OT323 ZUMT717 500mW ZUMT717 ZUMT617 -10mA, 100MHz 300ns. vc 125a

    Untitled

    Abstract: No abstract text available
    Text: SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZUMT807-25 ISSUE 1 - DECEMBER 1998_ P A R T M A R K IN G D E T A ILS -T 8 C O M P L E M E N T A R Y TY P E - Z U M T 8 1 7 -2 5 ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE U N IT C o lle c to r-B a s e V o lta g e


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    PDF OT323 ZUMT807-25

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 - DECEMBER 1998 Q_ PARTM ARKING DETAIL — T3 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e VcBO 30 V V C o lle c to r-E m itte r V o lta g e


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    PDF OT323 ZUMTS20

    Untitled

    Abstract: No abstract text available
    Text: SOT323 PNP SILICON PLANAR ZUMT2907A SWITCHING TRANSISTOR ISSUE 1 - OCTOBER 1998 Q_ FEATURES * Fast s w itc h in g PARTM ARKING D E T A IL -T 1 5 CO M PLIM E N TA R Y TYPE - Z U M T 2 22 2 A ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


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    PDF OT323 ZUMT2907A -50mA, 100MHz 100KHz -150mA, -15mA -150mA 200ns