02N60S5
Abstract: SPB02N60S5 SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
SPP02N60S5
P-TO220-3-1
02N60S5
Q67040-S4181
P-TO263-3-2
02N60S5
SPB02N60S5
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PDF
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SPP02N60S5
Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on
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Original
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
SPPx5N60S5/SPBx5N60S5
Q67040-S4181
02N60S5
SPP02N60S5
k 117
02n60s5
smd diode 44a
SPB02N60S5
SPBX5N60S5
02N60
Transistor 02N60S5
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PDF
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SPB02N60S5
Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
Text: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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Original
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
SPP02N60S5
P-TO220-3-1
P-TO263-3-2
02N60S5
Q67040-S4181
SPB02N60S5
02N60S5
siemens 230 98 O
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PDF
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SPB02N60S5
Abstract: SPP02N60S5 02N60 02N60S5 02n60s
Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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Original
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
P-TO220-3-1
02N60S5
Q67040-S4181
P-TO263-3-2
SPP02N60S5
SPB02N60S5
02N60
02N60S5
02n60s
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PDF
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02N60S5
Abstract: SPB02N60S5 SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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Original
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
SPP02N60S5
P-TO220-3-1
02N60S5
Q67040-S4181
P-TO263-3-2
02N60S5
SPB02N60S5
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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OCR Scan
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
P-T0220-3-1
02N60S5
Q67040-S4181
P-T0263-3-2
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PDF
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