Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPD09N Search Results

    SF Impression Pixel

    SPD09N Price and Stock

    Siemens SPD09N05

    9.2 A, 55 V, 0.1 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SPD09N05 26,927
    • 1 $0.72
    • 10 $0.72
    • 100 $0.72
    • 1000 $0.72
    • 10000 $0.252
    		Buy Now

    Infineon Technologies AG SPD09N05

    9.2 A, 55 V, 0.1 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SPD09N05 9,739
    • 1 $0.72
    • 10 $0.72
    • 100 $0.72
    • 1000 $0.72
    • 10000 $0.252
    		Buy Now
    SPD09N05 3,040
    • 1 $1.2
    • 10 $1.2
    • 100 $1.2
    • 1000 $0.48
    • 10000 $0.42
    		Buy Now

    SPD09N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD09N05 Infineon Technologies SIPMOS PowerTransistor Original PDF
    SPD09N05 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD09N05 Siemens Original PDF
    SPD09N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPD09N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPD09N05

    Abstract: P-TO252 SPU09N05 spd09n
    Text: SPD09N05 SPU09N05 Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD09N05 55 V 9.2 A 0.15 Ω P-TO252 Q67000-. . . . - . .


    Original     		PDF SPD09N05 SPU09N05 P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD09N05 P-TO252 SPU09N05 spd09n

    SPD09N05

    Abstract: P-TO252 Q67040-S4130-A2 SPU09N05
    Text: SPD09N05 SIPMOS  Power Transistor Features Product Summary • N channel Drain source voltage VDS Drain-Source on-state resistance RDS on 0.115 Ω Continuous drain current ID • Enhancement mode • Avalanche rated 55 V 9.2 A • dv/dt rated •=175°C operating temperature


    Original     		PDF SPD09N05 P-TO252 Q67040-S4136-A2 SPU09N05 P-TO251 Q67040-S4130-A2 SPD09N05 P-TO252 SPU09N05

    09N05

    Abstract: No abstract text available
    Text: SPD 09N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 9.2 A Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature


    Original     		PDF 09N05 SPD09N05 SPU09N05 P-TO252 P-TO251 Q67040-S4136-A2 Q67040-S4130-A2 SPD09N05 09N05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    09n05

    Abstract: SPD09N05 P-TO252 Q67040-S4130-A2 Q67040-S4136 SPU09N05
    Text: SPD 09N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 9.2 A Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature


    Original     		PDF 09N05 SPD09N05 P-TO252 Q67040-S4136 P-TO251 SPU09N05 Q67040-S4130-A2 09n05 SPD09N05 P-TO252 Q67040-S4136 SPU09N05

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    09n05

    Abstract: D 92 M - 02 DIODE
    Text: Infineon ^ p r o v c d R technologie* SPD^ ° 5 » - '1 SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS 55 • Enhancement mode Drain-Source on-state resistance f l DS on 0.1 Q. • Avalanche rated Continuous drain current


    OCR Scan     		PDF S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T 09n05 D 92 M - 02 DIODE