SPD09N05 Search Results

SPD09N05 Price and Stock

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Siemens SPD09N05 9.2 A, 55 V, 0.1 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPD09N05		26,927			1 $0.72 10 $0.72 100 $0.72 1000 $0.72 10000 $0.252	Buy Now
Infineon Technologies AG SPD09N05 9.2 A, 55 V, 0.1 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPD09N05		9,739			1 $0.72 10 $0.72 100 $0.72 1000 $0.72 10000 $0.252	Buy Now
	SPD09N05		3,040			1 $1.2 10 $1.2 100 $1.2 1000 $0.48 10000 $0.42	Buy Now

SPD09N05 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPD09N05		Infineon Technologies	SIPMOS PowerTransistor		Original	PDF
SPD09N05		Infineon Technologies	SIPMOS Power Transistor		Original	PDF
SPD09N05		Siemens			Original	PDF
SPD09N05		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

SPD09N05 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SPD09N05 Abstract: P-TO252 SPU09N05 spd09n Text: SPD09N05 SPU09N05 Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD09N05 55 V 9.2 A 0.15 Ω P-TO252 Q67000-. . . . - . .	Original	PDF	SPD09N05 SPU09N05 P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD09N05 P-TO252 SPU09N05 spd09n
SPD09N05 Abstract: P-TO252 Q67040-S4130-A2 SPU09N05 Text: SPD09N05 SIPMOS  Power Transistor Features Product Summary • N channel Drain source voltage VDS Drain-Source on-state resistance RDS on 0.115 Ω Continuous drain current ID • Enhancement mode • Avalanche rated 55 V 9.2 A • dv/dt rated •=175°C operating temperature	Original	PDF	SPD09N05 P-TO252 Q67040-S4136-A2 SPU09N05 P-TO251 Q67040-S4130-A2 SPD09N05 P-TO252 SPU09N05
09N05 Abstract: No abstract text available Text: SPD 09N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 9.2 A Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature	Original	PDF	09N05 SPD09N05 SPU09N05 P-TO252 P-TO251 Q67040-S4136-A2 Q67040-S4130-A2 SPD09N05 09N05
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	PDF	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
09n05 Abstract: SPD09N05 P-TO252 Q67040-S4130-A2 Q67040-S4136 SPU09N05 Text: SPD 09N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 9.2 A Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature	Original	PDF	09N05 SPD09N05 P-TO252 Q67040-S4136 P-TO251 SPU09N05 Q67040-S4130-A2 09n05 SPD09N05 P-TO252 Q67040-S4136 SPU09N05
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	PDF	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
09n05 Abstract: D 92 M - 02 DIODE Text: Infineon ^ p r o v c d R technologie* SPD^ ° 5 » - '1 SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS 55 • Enhancement mode Drain-Source on-state resistance f l DS on 0.1 Q. • Avalanche rated Continuous drain current	OCR Scan	PDF	S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T 09n05 D 92 M - 02 DIODE