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    SPD30N Price and Stock

    Infineon Technologies AG SPD30N08S2-22

    MOSFET N-CH 75V 30A TO252-3
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    DigiKey SPD30N08S2-22 Reel 2,500
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    Verical SPD30N08S2-22 1,134 632
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    • 1000 $0.5608
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    Quest Components SPD30N08S2-22 4,508
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    Rochester Electronics SPD30N08S2-22 1,134 1
    • 1 $0.5278
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    • 1000 $0.4486
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    Rochester Electronics LLC SPD30N08S2-22

    MOSFET N-CH 75V 30A TO252-3
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    DigiKey SPD30N08S2-22 Bulk 547
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    Infineon Technologies AG SPD30N06S2-23

    MOSFET N-CH 55V 30A TO252-3
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    DigiKey SPD30N06S2-23 Reel 2,500
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    Quest Components SPD30N06S2-23 269,600
    • 1 $1.75
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    • 1000 $1.75
    • 10000 $0.525
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    Infineon Technologies AG SPD30N03S2L-07

    MOSFET N-CH 30V 30A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD30N03S2L-07 Reel 2,500
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    Infineon Technologies AG SPD30N03S2L10T

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L10T Reel 2,500
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    Find more SPD30N price and stock on Findchips.com

    SPD30N Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD30N03 Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD30N03 Siemens Original PDF
    SPD30N03 Siemens Original PDF
    SPD30N03 Siemens Original PDF
    SPD30N03 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD 30N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD30N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPD30N03L Infineon Technologies Original PDF
    SPD30N03L Siemens Original PDF
    SPD30N03L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD30N03S2L07 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-07 Infineon Technologies OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.7m ?, 30A, LL Original PDF
    SPD30N03S2L-07 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.7 mOhm; RDS (on) (max) (@4.5V): 9.8 mOhm; ID (max): 30.0 A; Original PDF
    SPD30N03S2L07GBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30A TO252-3 Original PDF
    SPD30N03S2L07T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A DPAK Original PDF
    SPD30N03S2L-08 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-08 Infineon Technologies MOSFET and Power Drivers, OptiMOS Power Transistor Original PDF
    SPD30N03S2L10 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-10 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPD30N03S2L-10 Infineon Technologies OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4m ?, 30A, LL Original PDF

    SPD30N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SPU30N03L

    Abstract: No abstract text available
    Text: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated


    Original     		SPD30N03L P-TO252 Q67040-S4148-A2 SPU30N03L P-TO251-3-1 Q67040-S4149-A2 SPU30N03L PDF

    Untitled

    Abstract: No abstract text available
    Text: Target data sheet SPD30N08S2L-24 SIPMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 75 V • Enhancement mode Drain-source on-state resistance RDS on 24 mΩ • Avalanche rated Continuous drain current ID 25 A • Logic Level


    Original     		SPD30N08S2L-24 SPD30N08S2L-24 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11  Low On-Resistance RDS(on)  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance


    Original     		SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10 PDF

    TO252 thermal character

    Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
    Text: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature


    Original     		SPD30N03S2L-07 PG-TO252-3 SPD30N03S2L-07G 2N03L07 SPD30N03S2L-07 SSPD30N03S2L-07G SPD30N03S2L-07G TO252 thermal character ANPS071E max2958 f1816 PDF

    2N0615

    Abstract: INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 SPD30N06S2-15
    Text: SPD30N06S2-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P-TO252 • dv/dt rated Type SPD30N06S2-15 Package


    Original     		SPD30N06S2-15 P-TO252 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 PDF

    2N03L10

    Abstract: ANPS071E SPD30N03S2L-10
    Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10 2N03L10 ANPS071E PDF

    2N0615

    Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N06S2-15 Package Ordering Code


    Original     		SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15 PDF

    1412G

    Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
    Text: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		SPD30N03S2L-07 P-TO252-3-11 P-TO252-3-11 Q67042-S4091 2N03L07 PG-TO252-3 1412G ANPS071E SPD30N03S2L-07 PDF

    2N0822

    Abstract: SPD30N08S2-22
    Text: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 21.5 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413


    Original     		SPD30N08S2-22 SPD30N08S2-22 Q67060-S7413 2N0822 BSPD30N08S2-22, 2N0822 PDF

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level • 175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package


    Original     		SPD30N06S2L-23 P-TO252 Q67060-S7410 2N06L23 BSPD30N06S2L-23, SPD30N06S2L-23 2n06l23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPD30N06S2L-13 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 13 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated


    Original     		SPD30N06S2L-13 Q67040-S4254 SPD30N06S2L-13 P-TO252 PDF

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD30N06S2L-23 Package Ordering Code


    Original     		SPD30N06S2L-23 SPD30N06S2L-23 Q67060-S7410 2N06L23 BSPD30N06S2L-23, 2n06l23 PDF

    2n03l08

    Abstract: P-TO252 SPD30N03S2L-08 max2958
    Text: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated


    Original     		SPD30N03S2L-08 P-TO252 SPD30N03S2L-08 Q67042-S4031 2N03L08 2n03l08 P-TO252 max2958 PDF

    2n03l

    Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
    Text: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature


    Original     		SPD30N03S2L-07 PG-TO252-3 SPD30N03S2L-07G PG-TO252-3 2N03L07 SPD30N03S2L-07 SSPD30N03S2L-07G SPD30N03S2L-07G 2n03l ANPS071E DT SMD 2N03 spd30n PDF

    2N03L20

    Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
    Text: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated


    Original     		SPD30N03S2L-20 P-TO252-3-1 P-TO252-3-1 Q67042-S4077 2N03L20 BSPD30N03S2L-20, SPD30N03S2L-20 2N03L20 BSPD30N03S2L-20 PDF

    2N03L10

    Abstract: P-TO252 SPD30N03S2L-10
    Text: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance


    Original     		SPD30N03S2L-10 P-TO252 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10 2N03L10 P-TO252 PDF

    2N08L21

    Abstract: No abstract text available
    Text: SPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID  Logic Level V m 20.5 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching buck converter


    Original     		SPD30N08S2L-21 Q67060-S7414 2N08L21 BSPD30N08S2L-21, SPD30N08S2L-21 2N08L21 PDF

    2N0822

    Abstract: BSPD30N08S2-22 2n08 ANPS071E SPD30N08S2-22 INFINEON PART MARKING to252
    Text: SPD30N08S2-22 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 75 ID • 175°C operating temperature V 21.5 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N08S2-22 Package Ordering Code


    Original     		SPD30N08S2-22 Q67060-S7413 2N0822 BSPD30N08S2-22, SPD30N08S2-22 2N0822 BSPD30N08S2-22 2n08 ANPS071E INFINEON PART MARKING to252 PDF

    2N08L21

    Abstract: BSPD30N08S2L-21 SPD30N08S2L-21 ANPS071E 54AAT
    Text: SPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 • Enhancement mode R DS on ID • Logic Level V 20.5 mΩ 30 • 175°C operating temperature A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD30N08S2L-21


    Original     		SPD30N08S2L-21 Q67060-S7414 2N08L21 BSPD30N08S2L-21, SPD30N08S2L-21 2N08L21 BSPD30N08S2L-21 ANPS071E 54AAT PDF

    2N03L10

    Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
    Text: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		SPD30N03S2L-10 PG-TO252-3 SPD30N03S2L-10G 2N03L10 SPD30N03S2L-10 2N03L10 TO252 thermal character TO252 rthjc ANPS071E PDF

    2N08L21

    Abstract: SPD30N08S2L-21 Q67060-S7414
    Text: Preliminary data SPD30N08S2L-21 OptiMOS =Power-Transistor Product Summary Feature 75 VDS • N-Channel RDS on • Enhancement mode 20.5 mΩ 30 ID • Logic Level V A P-TO252-3-1 •=175°C operating temperature • Avalanche rated • dv/dt rated Type


    Original     		SPD30N08S2L-21 P-TO252-3-1 P-TO252-3-1 Q67060-S7414 2N08L21 2N08L21 SPD30N08S2L-21 Q67060-S7414 PDF

    2N03L20

    Abstract: No abstract text available
    Text: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 20 mΩ •Logic Level ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature


    Original     		SPD30N03S2L-20 SPD30N03S2L-20 Q67042-S4077 2N03L20 BSPD30N03S2L-20, 2N03L20 PDF

    2n06l23

    Abstract: 50h60
    Text: Preliminary data SPD30N06S2L-23 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 23 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated


    Original     		SPD30N06S2L-23 Q67060-S7410 2N06L23 SPD30N06S2L-23 P-TO252 2n06l23 50h60 PDF

    2N03L10

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		SPD30N03S2L-10 PG-TO252-3 SPD30N03S2L-10G 2N03L10 SPD30N03S2L-10 2N03L10 PDF