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    SPI07N60C3 SMD Search Results

    SPI07N60C3 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SPI07N60C3 SMD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPI07N60C3 SMD Infineon Technologies CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.60 ?, 7.3A Original PDF

    SPI07N60C3 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07n60c3

    Abstract: transistor 07n60c3 SPP07N60C3 SPA07N60C3 Q67040-S4400 07N60C3 equivalent SPI07N60C3 PG-TO220-3 SMD marking code 55A TRANSISTOR SMD MARKING CODE G12
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


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    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3 transistor 07n60c3 SPP07N60C3 SPA07N60C3 Q67040-S4400 07N60C3 equivalent SPI07N60C3 PG-TO220-3 SMD marking code 55A TRANSISTOR SMD MARKING CODE G12

    07N60C3 equivalent

    Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


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    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 equivalent 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3

    07N60C3

    Abstract: 07n60c 07n60
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07N60C3

    Abstract: AN-TO220-3-31-01
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 AN-TO220-3-31-01

    07n60c3

    Abstract: 07N60C3 SMD
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


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    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD

    07n60c3

    Abstract: 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07n60c3 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07n60c3

    Abstract: 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


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    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 07n60c3 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


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    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12

    07N60C3

    Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original
    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3

    07n60c3

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original
    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original
    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31

    07N60C3

    Abstract: 07n60c
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original
    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12

    07N60C3

    Abstract: No abstract text available
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original
    PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3

    SPI07N60C3 SMD

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original
    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 SPI07N60C3 SMD

    07N60C3

    Abstract: PG-TO220-3-31
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original
    PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: 07N60C3

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


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    PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    Buck-Boost Converter advantages

    Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
    Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.


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    PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor

    smps* ZVT

    Abstract: SPN04N60C2 SPP11N60C3 spp20n60 spp20n60c3 SPN03N60S5 SPN04N60S5 SPU01N60S5 SPD01N60S5 SPN01N60S5
    Text: Application Note, V1.2, Jan. 2002 CoolMOS TM AN-CoolMOS-03 How to Select the Right CoolMOS and its Power Handling Capability Power Management & Supply N e v e r s t o p t h i n k i n g . How to Select the Right CoolMOSTM and its Power Handling Capability Revision History:


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    PDF AN-CoolMOS-03 2002-Sep. smps* ZVT SPN04N60C2 SPP11N60C3 spp20n60 spp20n60c3 SPN03N60S5 SPN04N60S5 SPU01N60S5 SPD01N60S5 SPN01N60S5