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    07N60C Search Results

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    07N60C Price and Stock

    Infineon Technologies AG SPD07N60C3ATMA1

    LOW POWER_LEGACY
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    DigiKey SPD07N60C3ATMA1 Reel 2,500 2,500
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    Avnet Americas SPD07N60C3ATMA1 Reel 22,500 15 Weeks 2,500
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    Mouser Electronics SPD07N60C3ATMA1 91
    • 1 $2.46
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    Newark SPD07N60C3ATMA1 Cut Tape 862 1
    • 1 $2.56
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    EBV Elektronik SPD07N60C3ATMA1 16 Weeks 2,500
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    Infineon Technologies AG SPP07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60C3XKSA1 Tube 567 1
    • 1 $3.27
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    Mouser Electronics SPP07N60C3XKSA1 896
    • 1 $2.79
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    Newark SPP07N60C3XKSA1 Bulk 1,636 1
    • 1 $2.82
    • 10 $2.11
    • 100 $1.39
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    Rochester Electronics SPP07N60C3XKSA1 36 1
    • 1 $1.19
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    EBV Elektronik SPP07N60C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPA07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-FP
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    DigiKey SPA07N60C3XKSA1 Tube 461 1
    • 1 $3.08
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    Newark SPA07N60C3XKSA1 Bulk 530 1
    • 1 $2.45
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    Rochester Electronics SPA07N60C3XKSA1 100 1
    • 1 $1.1
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    • 100 $1.03
    • 1000 $0.935
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    Chip1Stop SPA07N60C3XKSA1 Tube 5,988
    • 1 $2.39
    • 10 $1.22
    • 100 $1.04
    • 1000 $0.986
    • 10000 $0.931
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    EBV Elektronik SPA07N60C3XKSA1 16 Weeks 500
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    Rochester Electronics LLC SPA07N60C2

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA07N60C2 Bulk 495
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    • 1000 $0.61
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    Infineon Technologies AG SPD07N60C3T

    MOSFET N-CH 650V 7.3A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD07N60C3T Reel 2,500
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    • 10000 $0.70638
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    Find more 07N60C price and stock on Findchips.com

    07N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60

    Abstract: 07N60C3
    Text: Final data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: 07N60C2 07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original     		PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2

    07N60C2

    Abstract: s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c
    Text: Final data 07N60C2, 07N60C2 07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated


    Original     		PDF SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 Q67040-S4309 07N60C2 s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12

    smd marking g12

    Abstract: No abstract text available
    Text: 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB07N60C3 P-TO263-3-2 07N60C3 SPB07N60C3 Q67040-S4394 smd marking g12

    07N60C3

    Abstract: 07n60c
    Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c

    07N60C3

    Abstract: No abstract text available
    Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3

    07n60c3

    Abstract: 07N60C3 SMD
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD

    SPA07N60C3

    Abstract: No abstract text available
    Text: 07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated


    Original     		PDF SPA07N60C3 P-TO220-3-31 07N60C3 P-TO220-3-31 Q67040-S4409 SPA07N60C3

    07N60C3

    Abstract: 07n60c 07n60
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60

    07N60CFD

    Abstract: 07N60 JESD22 PG-TO-220-3-1 SPP07N60CFD 07n60c PG-TO220 infineon s66
    Text: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


    Original     		PDF SPP07N60CFD PG-TO220 07N60CFD 07N60CFD 07N60 JESD22 PG-TO-220-3-1 SPP07N60CFD 07n60c PG-TO220 infineon s66

    Untitled

    Abstract: No abstract text available
    Text: 07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3

    07N60CFD

    Abstract: JESD22 PG-TO220-3-31 SPA07N60CFD infineon s66
    Text: 07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 FP


    Original     		PDF SPA07N60CFD PG-TO220 PG-TO220FP 07N60CFD 07N60CFD JESD22 PG-TO220-3-31 SPA07N60CFD infineon s66

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Text: Final data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3

    Q67040-S4423

    Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 Q67040-S4423 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12

    07N60C3

    Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3

    07n60c3

    Abstract: No abstract text available
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3

    07N60C3

    Abstract: Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: 07N60C3 07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 07N60C3 Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3

    AR4100

    Abstract: Q67040-S4423
    Text: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 AR4100 Q67040-S4423

    Untitled

    Abstract: No abstract text available
    Text: 07N60C3 07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1

    07n60c3

    Abstract: 07n60c AR4100
    Text: 07N60C3 07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07n60c AR4100

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3