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    SQJ850EP Price and Stock

    Vishay Siliconix SQJ850EP-T2_GE3

    N-CHANNEL 60-V (D-S) 175C MOSFET
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    DigiKey SQJ850EP-T2_GE3 Digi-Reel 8,710 1
    • 1 $2.01
    • 10 $1.282
    • 100 $2.01
    • 1000 $0.63046
    • 10000 $0.63046
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    SQJ850EP-T2_GE3 Cut Tape 8,710 1
    • 1 $2.01
    • 10 $1.282
    • 100 $2.01
    • 1000 $0.63046
    • 10000 $0.63046
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    SQJ850EP-T2_GE3 Reel 3,000 3,000
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    • 10000 $0.528
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    Vishay Siliconix SQJ850EP-T1_GE3

    MOSFET N-CH 60V 24A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQJ850EP-T1_GE3 Digi-Reel 8,244 1
    • 1 $2.53
    • 10 $1.627
    • 100 $2.53
    • 1000 $0.82267
    • 10000 $0.82267
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    SQJ850EP-T1_GE3 Cut Tape 8,244 1
    • 1 $2.53
    • 10 $1.627
    • 100 $2.53
    • 1000 $0.82267
    • 10000 $0.82267
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    SQJ850EP-T1_GE3 Reel 6,000 3,000
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    • 10000 $0.724
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    Vishay Intertechnologies SQJ850EP-T1_GE3

    Trans MOSFET N-CH 60V 24A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ850EP-T1-GE3)
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    Avnet Americas SQJ850EP-T1_GE3 Reel 3,000
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    SQJ850EP-T1_GE3 Reel 20 Weeks 3,000
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    • 10000 $0.71242
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    Mouser Electronics SQJ850EP-T1_GE3 2,335
    • 1 $1.73
    • 10 $1.48
    • 100 $0.997
    • 1000 $0.759
    • 10000 $0.723
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    Newark SQJ850EP-T1_GE3 Bulk 1
    • 1 $1.85
    • 10 $1.53
    • 100 $1.27
    • 1000 $1.08
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    Vishay Intertechnologies SQJ850EP-T2_GE3

    Transistor MOSFET N-CH 60V 24A 8-Pin PowerPAK SO T/R (Alt: SQJ850EP-T2_GE3)
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    Avnet Americas SQJ850EP-T2_GE3 20 Weeks 3,000
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    Mouser Electronics SQJ850EP-T2_GE3 52,392
    • 1 $1.41
    • 10 $1.1
    • 100 $0.771
    • 1000 $0.58
    • 10000 $0.528
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    Vishay Intertechnologies SQJ850EP-T1-GE3

    MOSFETs RECOMMENDED ALT SQJ8
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    TTI SQJ850EP-T1-GE3 Reel 3,000 3,000
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    EBV Elektronik SQJ850EP-T1-GE3 26 Weeks 3,000
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    SQJ850EP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQJ850EP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 24A PPAK 8SOIC Original PDF
    SQJ850EP-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 24A Original PDF

    SQJ850EP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQJ850EP AEC-Q101 2002/95/EC SQJ850EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQJ850EP www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SQJ850EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQJ850EP AEC-Q101 2002/95/EC SQJ850EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SQJ850EP

    Abstract: No abstract text available
    Text: SQJ850EP Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.022 RDS(on) (Ω) at VGS = 4.5 V 0.031 ID (A) 10.3 Configuration Single (1, 2, 5, 6) D PowerPAK SO-8L Single m 5m 6.1


    Original
    PDF SQJ850EP 2002/95/EC AEC-Q101 SQJ850EP-T1-GE3 18-Jul-08 SQJ850EP

    AN609

    Abstract: No abstract text available
    Text: SQJ850EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SQJ850EP AN609, 15-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedd


    Original
    PDF SQJ850EP 2002/95/EC AEC-Q101 SQJ850EP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedd


    Original
    PDF SQJ850EP 2002/95/EC AEC-Q101 SQJ850EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQJ850EP AEC-Q101 2002/95/EC SQJ850EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sqj850

    Abstract: No abstract text available
    Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQJ850EP AEC-Q101 2002/95/EC SQJ850EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sqj850

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQJ850EP AEC-Q101 2002/95/EC SQJ850EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedd


    Original
    PDF SQJ850EP 2002/95/EC AEC-Q101 SQJ850EP-T1-GE3 11-Mar-11

    SQJ850EP-T1-GE

    Abstract: No abstract text available
    Text: SQJ850EP Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedd


    Original
    PDF SQJ850EP 2002/95/EC AEC-Q101 SQJ850EP-T1-GE3 18-Jul-08 SQJ850EP-T1-GE

    Untitled

    Abstract: No abstract text available
    Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A)


    Original
    PDF SQJ850EP AEC-Q101 2002/95/EC SQJ850EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


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    PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


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    PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    VMN-SG2151-1406

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


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    PDF AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/


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    PDF AEC-Q101 VMN-SG2151-1212

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


    Original
    PDF AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309