MARKING C4
Abstract: KTX201E "marking C4"
Text: SEMICONDUCTOR KTX201E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking C4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark C KTX201E hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.
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KTX201E
2006-2010-ek
MARKING C4
KTX201E
"marking C4"
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Untitled
Abstract: No abstract text available
Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
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STAC4933
STAC4933
STAC177B
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Untitled
Abstract: No abstract text available
Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive
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STAC3932B
2002/95/EC
STAC244B
STAC3932B
STAC3932
DocID15449
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Untitled
Abstract: No abstract text available
Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz • In compliance with the 2002/95/EEC European
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SD4933
2002/95/EEC
SD4933
DocID15487
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transistor marking G9
Abstract: J4-81 j4 81 MARKING D8
Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
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STAC3933
STAC3933
STAC177B
transistor marking G9
J4-81
j4 81
MARKING D8
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STAC3932
Abstract: STAC3932B STAC244B
Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description
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STAC3932B
2002/95/EC
STAC3932B
STAC244B
STAC3932
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Untitled
Abstract: No abstract text available
Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european
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SD4933
2002/95/EEC
SD4933
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Untitled
Abstract: No abstract text available
Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB
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STAC9200
2002/95/EC
STAC244B
STAC9200
DocID025416
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SD4933
Abstract: M177 marking code h4 capacitor transistor marking code 325
Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European
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SD4933
2002/95/EEC
SD4933
M177
marking code h4 capacitor
transistor marking code 325
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LSE B9 transformer
Abstract: SD4933MR LSE B6 transformer SD4933
Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz
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SD4933MR
2002/95/EEC
M177MR
SD4933MR
LSE B9 transformer
LSE B6 transformer
SD4933
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Untitled
Abstract: No abstract text available
Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures
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SD2941-10
SD2941-10
SD2931-10
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SD2941-10
Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures
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SD2941-10
SD2941-10
SD2931-10
VK200 r.f choke
SD2941
st marking EE code
ST SD2931
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Untitled
Abstract: No abstract text available
Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz
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SD4933MR
2002/95/EEC
M177MR
SD4933MR
DocID023664
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PDF
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Untitled
Abstract: No abstract text available
Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS
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SD2942
SD2942
SD2932.
SD2942W
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Untitled
Abstract: No abstract text available
Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability
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SD2943
SD2943
SD2933,
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Untitled
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
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C4814
Abstract: mobil IMIC4814EYB
Text: C4814 Low EMI Clock Generator with I2C for Mobil Pentium System Boards Approved Product PRODUCT FEATURES T T T T T T T T T T T T T T Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock Up to 8 SDRAM clocks for 4 mobile SO DIMMs. 7 PCI synchronous clocks.
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C4814
C4814EYB
IMIC4814EYB
C4814
mobil
IMIC4814EYB
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SD2933W
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
SD2933W
SD2933W
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resistor 560 ohm
Abstract: SD2933
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
resistor 560 ohm
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sd2943
Abstract: No abstract text available
Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability
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SD2943
SD2943
SD2933,
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92196A146
Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
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SD3933
2002/95/EEC
SD3933
92196A146
rf transistor mark code H1
12AWG
700B
M177
toroid 6009
McMaster-Carr
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Untitled
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metalization • Excellent thermal stability • Common source configuration • POUT = 300 W min. with 20 dB gain @ 30 MHz • Thermally enhanced packaging for lower
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SD2933
SD2933
DocID7193
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l2c48
Abstract: No abstract text available
Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage
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5DL2C48A,
5FL2C48A,
U5DL2C48A,
U5FL2C48A
L2C48A,
5FL2C48A
5FL2C48A
l2c48
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diode t 5d
Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage
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5DL2C48A,
5FL2C48A,
U5DL2C48A,
U5FL2C48A
L2C48A,
5FL2C48A
L2C48A
5FL2C48A
diode t 5d
tim 5f
diode 5d
MARKING 5D DIODE
5dl2c
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