SD2931-10
Abstract: SD2931 JESD97 VK200 Bead 220 ohm 2.5A
Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
JESD97
VK200
Bead 220 ohm 2.5A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large
|
Original
|
SD2931-12MR
SD2931-12MR
SD2931
SD2931
M174MR
DocID023650
|
PDF
|
SD2931-11
Abstract: Bead 220 ohm 2.5A SD2931 VK200 17329
Text: SD2931-11 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2931-11
SD2931-11
SD2931
SD2931
Bead 220 ohm 2.5A
VK200
17329
|
PDF
|
Bead 220 ohm 2.5A
Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
Bead 220 ohm 2.5A
VK200
marking code transistor ND
sd2931-10w
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
|
PDF
|
Arco 423
Abstract: choke vk200 sd2931-10w
Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower
|
Original
|
SD2931-10
SD2931-10
SD2931
Arco 423
choke vk200
sd2931-10w
|
PDF
|
sd2931-10w
Abstract: marking code oz 09-Sep-2004
Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2931-10
SD2931-10
SD2931
sd2931-10w
marking code oz
09-Sep-2004
|
PDF
|
Dow Corning 340
Abstract: SD2931 TSD2931 FS 0245
Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS
|
Original
|
SD2931
SD2931
TSD2931
Dow Corning 340
TSD2931
FS 0245
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,
|
Original
|
SD2951-10
SD2951-10
SD2931-10
DocID025130
|
PDF
|
SD2941-10
Abstract: EE-19 transformer SD2931-10 VK200
Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower
|
Original
|
SD2941-10
175MHz
SD2941-10
SD2931-10.
EE-19 transformer
SD2931-10
VK200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2941-10
SD2941-10
SD2931-10
|
PDF
|
SD2941-10
Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures
|
Original
|
SD2941-10
SD2941-10
SD2931-10
VK200 r.f choke
SD2941
st marking EE code
ST SD2931
|
PDF
|
sd2931 fm
Abstract: SD2933 SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Text: AN1256 Application note High-power RF MOSFET targets VHF applications Introduction The SD2933, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold
|
Original
|
AN1256
SD2933,
SD2933
sd2931 fm
SD2931-10
AN1256
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
|
PDF
|
SD2931
Abstract: VK200 resistor 680 ohm
Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for
|
Original
|
SD2931
SD2931
VK200
resistor 680 ohm
|
PDF
|
|
|
RF POWER TRANSISTOR
Abstract: resistor 680 ohm
Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931
SD2931
RF POWER TRANSISTOR
resistor 680 ohm
|
PDF
|
EE-19 transformer
Abstract: Power Transformer EE-19 SD2931 VK200 resistor 680 ohm 25 ohm semirigid
Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS
|
Original
|
SD2931
SD2931
EE-19 transformer
Power Transformer EE-19
VK200
resistor 680 ohm
25 ohm semirigid
|
PDF
|
resistor 680 ohm
Abstract: No abstract text available
Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for
|
Original
|
SD2931
SD2931
resistor 680 ohm
|
PDF
|
ECG transistor replacement guide book free
Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a
|
Original
|
UG-309
UG-201
UG-349
UG-1034
UG-146
UG-83
UG-318
UG-273
UG-255
ECG transistor replacement guide book free
ecg semiconductors master replacement guide
philips ecg master replacement guide
Diode Equivalent 1N34A
philips ecg semiconductors master replacement guide
RCA SK CROSS-REFERENCE
ecg philips semiconductor master book
ECG NTE semiconductor manual
transistor to220 ph on 588 5v
rca 40673
|
PDF
|
300 to 50 Ohm RF transformer
Abstract: MHz-150W resistor 680 ohm
Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931-10
SD2931-10
SD2931
300 to 50 Ohm RF transformer
MHz-150W
resistor 680 ohm
|
PDF
|
uhf 150w mosfet
Abstract: SD2931 SD2931-10 TSD2931-10 VK200 resistor 330 Ohm
Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA ν ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
uhf 150w mosfet
TSD2931-10
VK200
resistor 330 Ohm
|
PDF
|
resistor 680 ohm
Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
resistor 680 ohm
Power Transformer EE-19
EE-19 transformer
VK200
rf transformer 50 ohm to 0.1 ohm
SCHEMATIC POWER SUPPLY WITH mosfet
|
PDF
|
Power Transformer EE-19
Abstract: resistor 680 ohm EE-19 transformer SD2931-10 vk200 rf choke SD2931 VK200
Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
Power Transformer EE-19
resistor 680 ohm
EE-19 transformer
vk200 rf choke
VK200
|
PDF
|
RF POWER TRANSISTOR
Abstract: arco capacitors choke vk200 SD2931 SD2931-10 VK200
Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931-10
SD2931-10
SD2931
SD2931
RF POWER TRANSISTOR
arco capacitors
choke vk200
VK200
|
PDF
|
resistor 680 ohm
Abstract: SD2931
Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES
|
Original
|
SD2931-10
SD2931-10
SD2931
resistor 680 ohm
|
PDF
|