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    ST2305A

    Abstract: No abstract text available
    Text: ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2305A ST2305A OT-23-3L -15V/-3 45m-ohm 55m-ohm -15V/-2 90m-ohm

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    Abstract: No abstract text available
    Text: ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2305A ST2305A OT-23-3L -20V/-3 45m-ohm 55m-ohm