STB1132 Search Results

STB1132 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STB1132		AUK	PNP Silicon Transistor		Original	PDF
STB1132O		AUK	TRANS GP BJT PNP 32V 1A 3SOT-89		Original	PDF
STB1132Y		AUK	TRANS GP BJT PNP 32V 1A 3SOT-89		Original	PDF

STB1132 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10003 NPN Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003 Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KST-8004-001 500mA, 10003 NPN STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003	PDF
STB1132 Abstract: STD1664 Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664	Original	STB1132 STD1664 OT-89 KST-8001-002 -500mA, -50mA -50mA, 30MHz STB1132 STD1664	PDF
STD1664 Abstract: Transistor STB1132 a2 sot-89 Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KSD-T5B009-000 STD1664 Transistor STB1132 a2 sot-89	PDF
Untitled Abstract: No abstract text available Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664	Original	STB1132 STD1664 OT-89 KST-8001-003	PDF
STB1132 Abstract: Transistor STD1664 a1 sot-89 Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664	Original	STB1132 STD1664 OT-89 KST-8001-003 STB1132 Transistor STD1664 a1 sot-89	PDF
Untitled Abstract: No abstract text available Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KST-8004-002	PDF
Untitled Abstract: No abstract text available Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KST-8004-003	PDF
STD1664 Abstract: STB1132 Text: STB1132 PNP Silicon Transistor Description PIN • Medium power amplifier Features • PC Collector power dissipation =1W(Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664	Original	STB1132 STD1664 OT-89 KSD-T5B021-001 STD1664 STB1132	PDF
STD1664 Abstract: STB1132 Text: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power amplifier application Features • PC Collector power dissipation =1W (Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KSD-T5B009-001 STD1664 STB1132	PDF
Untitled Abstract: No abstract text available Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664	Original	STB1132 STD1664 OT-89 KST-8001-003	PDF
Untitled Abstract: No abstract text available Text: STB1132 PNP Silicon Transistor Description PIN • Medium power am plifier Features • PC Collect or pow er dissipat ion = 1W( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = - 0.2V( Typ.) • Com plem ent ary pair wit h STD1664	Original	STB1132 STD1664 OT-89 KSD-T5B021-001	PDF
Untitled Abstract: No abstract text available Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KST-8004-003	PDF
Untitled Abstract: No abstract text available Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132	Original	STD1664 STB1132 OT-89 KST-8004-003	PDF
Untitled Abstract: No abstract text available Text: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power am plifier applicat ion Features • PC Collect or pow er dissipat ion = 1W ( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = 0.15V( Typ.)	Original	STD1664 STB1132 OT-89 KSD-T5B009-001	PDF