STH65N05 Search Results

STH65N05 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STH65N05		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
STH65N05FI		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

STH65N05 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STH65N05 Abstract: STH65N05FI 65260a Text: STH65N05 STH65N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 65 A 37 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STH65N05 STH65N05FI 100oC 175oC O-218 ISOWATT218 STH65N05 STH65N05FI 65260a	PDF
STE180N05 Abstract: STH65N05 Text: STE180N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N05 50 V < 0.006 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER	Original	STE180N05 STH65N05 E81743) STE180N05	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
SSH6N80 Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent	PDF
sth65n05 Abstract: STH65N05FI Text: 7 ^ 2 3 7 □□4ST70 2 7Ô • S G T H STH65N05 STH65N05FI SGS-THOMSON ¡[LISTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI ■ . ■ ■ . ■ . . ■ Vdss RDS on Id 50 V 50 V < 0.02 n < 0.02 n 65 A 37 A TYPICAL RDS(on) = 0.017 £2	OCR Scan	4ST70 STH65N05 STH65N05FI STH65N05/FI STH65N05FI	PDF
0n05 Abstract: No abstract text available Text: £ j ï SGS-THOMSON ULKgraMOeS S T E 1 8 0N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N05 dss 50 V RDS on Id < 0 .0 0 6 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING)	OCR Scan	STE180N05 STH65N05 E81743) 0n05	PDF
Untitled Abstract: No abstract text available Text: _ • 0045644 fZ 7 Ä 7# ETS ■ SGTH _ S C S -T H O M S O N [Ä « [L iO T r e s S T E 1 8 0 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss STE180N05 50 V R d S o ii < 0.006 a Id 180 A ■ HIGH CURRENT POWER MODULE	OCR Scan	STE180N05 STH65N05 E81743) 004SS4T	PDF