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    STN*4440

    Abstract: STN4440
    Text: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4440 STN4440 0V/10 STN*4440

    MOSFET 30v sop-8

    Abstract: STN4412 diode 68A transistor 8P Package Marking 8A STN44
    Text: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4412 STN4412 MOSFET 30v sop-8 diode 68A transistor 8P Package Marking 8A STN44

    MOSFET 30v sop-8

    Abstract: STN4488
    Text: STN4488L Dual N Channel Enhancement Mode MOSFET 20A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.


    Original     		PDF STN4488L STN4488L 0V/20A, 0V/18A, MOSFET 30v sop-8 STN4488

    STN442

    Abstract: STN44 Stanson Technology MOSFET 20V 80A
    Text: 26 STN44 STN442 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4426 STN442 STN4426 STN442 STN44 Stanson Technology MOSFET 20V 80A

    STN442D

    Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
    Text: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE


    Original     		PDF STN442D STN442 STN442D O-252 O-251 0V/20 O-252 O-251 STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley

    Untitled

    Abstract: No abstract text available
    Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4438 STN4438 Code120

    Untitled

    Abstract: No abstract text available
    Text: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE


    Original     		PDF STN442D STN442D O-252 O-251 0V/20 O-252 O-251

    STN4488

    Abstract: No abstract text available
    Text: STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.


    Original     		PDF STN4488L STN4488L 0V/20A, 0V/18A, STN4488

    Untitled

    Abstract: No abstract text available
    Text: STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4416 STN4416 0V/10A,

    stn440

    Abstract: STN4402 Stanson Technology
    Text: 02 STN44 STN440 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4402 STN440 STN4402 0V/12A, 0V/10A, stn440 Stanson Technology

    STN44

    Abstract: marking code 82A
    Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4438 STN4438 STN44 marking code 82A

    Untitled

    Abstract: No abstract text available
    Text: STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4480 STN4480 0V/14

    Untitled

    Abstract: No abstract text available
    Text: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4412 STN4412