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    STN48 Search Results

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    STN48

    Abstract: P008B TIP48
    Text: STN48 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING SOT-223 POWER PACKAGE IN TAPE & REEL ELECTRICALLY SIMILAR TO TIP48 2 APPLICATIONS ■ PCMCIA CARDS ■ GENERAL PURPOSE SWITCHING AND


    Original     		PDF STN48 OT-223 TIP48 STN48 OT-223 P008B TIP48

    marking 822

    Abstract: STN4822 Dual N
    Text: 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.


    Original     		PDF STN4822 STN4822 marking 822 Dual N

    Untitled

    Abstract: No abstract text available
    Text: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These


    Original     		PDF STN4826 STN4826

    A2732

    Abstract: STN48
    Text: 85 STN4 STN485 850 N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4850 STN485 STN4850 A2732 STN48

    Untitled

    Abstract: No abstract text available
    Text: STN484D N Channel Enhancement Mode MOSFET 30.0A DESCRIPTION STN484D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN484D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STN484D STN484D O-252 O-251 0V/20 0V/15 O-252 O-251

    Untitled

    Abstract: No abstract text available
    Text: STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These


    Original     		PDF STN4828 STN4828 0V/10

    SMBJ5A

    Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
    Text: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage


    Original     		PDF ST1284 RS232 DDR110 PowerSO-10, ISOWATT218, SMBJ5A irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928

    BU808DFH

    Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
    Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416


    Original     		PDF STX112 STBV68 STBV45 STBV42 STBV32 STX13003 BSS44 BFX34 2N5153 2N5681 BU808DFH ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH

    ST4828N

    Abstract: ST4828 STN4828 4828 datasheet 4828 Power MOSFET 50V 10A MOSFET 10A STN48 marking ST4828N SOP-8
    Text: N4828 ST STN Dual N Channel Enhancement Mode MOSFET 10A DESCRIPTION The ST4828N is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STN4828 ST4828N 0V/10A, STN4828 ST4828 4828 datasheet 4828 Power MOSFET 50V 10A MOSFET 10A STN48 marking ST4828N SOP-8