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STMicroelectronics STP340U/1 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	STP340U/1		6,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

STP340 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STP3407 Abstract: STP340 sot-23 P-Channel MOSFET Text: P Channel Enchancement Mode MOSFET STP3407 -4.1A DESCRIPTION The STP3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.	Original	PDF	STP3407 STP3407 OP-23-3L -30V/-4 52m-ohm -30V/-3 85m-ohm on-resis85 OT-23-3L STP340 sot-23 P-Channel MOSFET
STP340U Abstract: thermistor 4k7 ZXLD1360 ZXLD1350 external mosfet application circuit B57621C103J62 ZXLD1360E5TA GRM31CR71H225KA88L Rebel TSOT23-5 ZRA124F01TA Text: ZXLD1360EV6 ZXLD1360EV6 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXLD1360EV6, Figure 1, is a double sided evaluation board for the ZXLD1360 LED driver with internal switch. The evaluation board is preset to drive a 660mA into a single LED, or an external choice of LEDs. The number of	Original	PDF	ZXLD1360EV6 ZXLD1360EV6 ZXLD1360EV6, ZXLD1360 660mA D-81541 STP340U thermistor 4k7 ZXLD1350 external mosfet application circuit B57621C103J62 ZXLD1360E5TA GRM31CR71H225KA88L Rebel TSOT23-5 ZRA124F01TA
A1YA Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014 Text: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	PDF	ST3401M ST3401M OT-23-3L -30V/-4 -30V/-3 STP3401M A1YA ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
Untitled Abstract: No abstract text available Text: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	PDF	ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG
STP3401 Abstract: ST3401 A1YA marking 04 sot-23-3L Text: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	PDF	ST3401 ST3401 OT-23-3L -30V/-4 -30V/-3 -30V/-1 STP3401 A1YA marking 04 sot-23-3L
MOSFET P channel SOT-23 Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340 Text: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	PDF	ST3401SRG ST3401RSG OT-23 -30V/-4 -30V/-3 STP3401SRG OT-23 MOSFET P channel SOT-23 A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
Untitled Abstract: No abstract text available Text: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	PDF	ST3401SRG ST3401RSG OT-23 -30V/-4 -30V/-3 STP3401SRG