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    STMicroelectronics STRH12P10GY1

    Trans P-CH 100V 12A 3-Pin TO-257AA Carrier T/R - Bulk (Alt: STRH12P10GY1)
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    STRH12P10GY1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA


    Original     		PDF STRH12P10 O-257AA DocID022337

    STRH12P10GYG

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications


    Original     		PDF STRH12P10 O-257AA DocID022337 STRH12P10GYG

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard P-channel 100 V, 12 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 12 A TBD TBD • Fast switching ■ 100% avalanche tested 1 ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 2 3 TO-257AA Applications ■ Satellite ■


    Original     		PDF STRH12P10 O-257AA SC06140p STRH12P10GY1 O-257AA