transistor c 6093
Abstract: c 6093 AN609 SUD30N03-30
Text: SUD30N03-30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUD30N03-30
AN609
29-Aug-07
transistor c 6093
c 6093
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70925
Abstract: SUD30N03-30
Text: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD30N03-30
0-to-10V
27-Mar-98
70925
SUD30N03-30
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48782
Abstract: SUD30N03-30
Text: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUD30N03-30
O-252
S-48782--Rev.
05-Aug-96
48782
SUD30N03-30
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SUD30N03-30
Abstract: No abstract text available
Text: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUD30N03-30
O-252
S-49520--Rev.
18-Dec-96
SUD30N03-30
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SUD30N03-30
Abstract: 70268
Text: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUD30N03-30
O-252
S-57253--Rev.
24-Feb-98
SUD30N03-30
70268
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SUD30N04-10
Abstract: No abstract text available
Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252
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SUD30N04-10
O-252
S-31724--Rev.
18-Aug-03
SUD30N04-10
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SUD30N04-10
Abstract: a2057
Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD30N04-10
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SUD30N04-10
O-252
S-56917--Rev.
23-Mar-98
SUD30N04-10
a2057
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The subcircuit model was extracted and optimized
Abstract: SUD30N
Text: SPICE Device Model SUD30N N-Channel Enhancement-Mode Transistor Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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SUD30N
The subcircuit model was extracted and optimized
SUD30N
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SUD30N03-30
Abstract: No abstract text available
Text: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUD30N03-30
O-252
18-Jul-08
SUD30N03-30
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AN609
Abstract: SUD30N04-10
Text: SUD30N04-10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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SUD30N04-10
AN609
29-Aug-07
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SUD30N03-30
Abstract: No abstract text available
Text: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD30N03-30
18-Jul-08
SUD30N03-30
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Untitled
Abstract: No abstract text available
Text: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUD30N03-30
O-252
SUD30N03-30
08-Apr-05
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SUD30N04-10
Abstract: No abstract text available
Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252
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SUD30N04-10
O-252
18-Jul-08
SUD30N04-10
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Untitled
Abstract: No abstract text available
Text: SUD30N03-30 Siliconix N-Channel 30-V D-S , 175_C MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUD30N03-30
O-252
SUD30N03-30
S-57253--Rev.
24-Feb-98
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Audio Power Amplifier MOSFET TOSHIBA
Abstract: TOSHIBA DIODE CATALOG IRF7313 chemicon oscon 25PS100JM12 Nippon capacitors
Text: XC9213 Series ETR0505_001 Synchronous Step-Down DC/DC Controller IC - Input Voltage : 25V ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9213 series is N-ch & N-ch drive, synchronous, step-down DC/DC controller IC with a built-in bootstrap driver circuit.
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XC9213
ETR0505
Audio Power Amplifier MOSFET TOSHIBA
TOSHIBA DIODE CATALOG
IRF7313
chemicon oscon
25PS100JM12
Nippon capacitors
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MTD20NO6HD
Abstract: mbro530 MBRO530T1 PC40-EPC17 LT1693 inverter 12v to 220 ac mosfet based CPHS-EFD20-1S-10P marking t1c SMD403 2N7002 PHILIPS MARKING
Text: LTC1693 High Speed Single/Dual MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1693 family drives power MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. Dual MOSFET Drivers in SO-8 Package
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LTC1693
LTC1693-1
LT1161
LTC1163
LT1339
LTC1435
1693f
MTD20NO6HD
mbro530
MBRO530T1
PC40-EPC17
LT1693
inverter 12v to 220 ac mosfet based
CPHS-EFD20-1S-10P
marking t1c
SMD403
2N7002 PHILIPS MARKING
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irf3205 mosfet transistor
Abstract: No abstract text available
Text: LT1339 High Power Synchronous DC/DC Controller U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1339 is a high power synchronous current mode switching regulator controller. The IC drives dual N-channel MOSFETs to create a single IC solution for high
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LT1339
000pF
150kHz
LTC1435A
LTC1438
LT1680
sn1339
1339fas
irf3205 mosfet transistor
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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40A 48v charger Schematic Diagram
Abstract: 12v step-down transformer operations files AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter bjt Self-Oscillating Flyback Converters ZVS Royer Self-Oscillating mobile charger 24V 20A SIEMENS battery charger spice model SFH213 fluorescent lamp driver 4W T5 3.1v to 350v ZENER DIODE
Text: LINEAR TECHNOLOGY NOVEMBER 2000 IN THIS ISSUE… COVER ARTICLE 3MHz Synchronous Boost Regulators Save Critical Board Space in Portable Applications . 1 Mark Jordan Issue Highlights . 2 LTC in the News . 2
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OT-23
10MHz
D-70567
40A 48v charger Schematic Diagram
12v step-down transformer operations files
AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter
bjt Self-Oscillating Flyback Converters
ZVS Royer
Self-Oscillating mobile charger
24V 20A SIEMENS battery charger
spice model SFH213
fluorescent lamp driver 4W T5
3.1v to 350v ZENER DIODE
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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SI3456DV
Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
Text: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30/31 Hotswap Controllers Heping Dai PMP Systems Power ABSTRACT The TPS2300/01/10/11/20/21/30/31 hotswap controllers allow safe board insertion and removal from a live backplane. With the current-sensing resistor RSENSE and the
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SLVA135
TPS2300/01/11/20/21/30/31
TPS2300/01/10/11/20/21/30/31
TPS23xx
SI3456DV
SI4420DY
SI4874DY
SUD50N03
lmt zener
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Untitled
Abstract: No abstract text available
Text: SUD30N04-10 Siliconix N-Channel 40-V D-S , 175°C MOSFET Product Summary V(BR)DSS (V) 40 Id (A) rDS(on) (£2) 0.010 @ V gs = 10 V 0.014 @ VGs = 4.5 V 30a 30a D Q TO-252 Drain Connected to Tab G D S Top View Order Number: SUD30N04-10 6 S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SUD30N04-10
O-252
S-56917â
23-Mar-98
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Untitled
Abstract: No abstract text available
Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY Id r DS(on) (-2) V (BR)DSS (V ) (A) 0 .0 1 0 @ V GS = 10 V 30 a 0.014 @ VGS = 4.5 V 30 a 40 D Q TO-252 o Jl nr G D Drain C onnected to Tab S Top View o s O rder Number:
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SUD30N04-10
O-252
ar-98
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T0252
Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)
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SMB60N03-10L
SMP60N03-10L
SMD30N03-30L
SMU30N03-30L
SUD30N03-30
SUD50N03-10
SUB75N05-06
SUP75N05-06
SUD45N05-20L
SMD25N05-45L
T0252
SUP75NO8-I0
SUP60N06-18
D-PAK
D2PAK
SMP40P06
T0263
70220AB
SMD10P05
T0-251
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