S-80748
Abstract: sup90n15 SUP90N15-18P
Text: SPICE Device Model SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N15-18P
18-Jul-08
S-80748
sup90n15
SUP90N15-18P
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Untitled
Abstract: No abstract text available
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
11-Mar-11
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SUP90N15-18P
Abstract: SUP90N15-18P-E3
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
11-Mar-11
SUP90N15-18P
SUP90N15-18P-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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S8018
Abstract: No abstract text available
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S8018
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sup90n15
Abstract: AN609 SUP90N15-18P
Text: SUP90N15-18P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP90N15-18P
AN609
18-Jan-08
sup90n15
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SUP90N15-18P
Abstract: SUP90N15-18P-E3
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
08-Apr-05
SUP90N15-18P
SUP90N15-18P-E3
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PDF
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SUP90N15-18P
Abstract: SUP90N15-18P-E3
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
18-Jul-08
SUP90N15-18P
SUP90N15-18P-E3
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Industrial Fabrication One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial Fabrication Welding 4 Cutting 5 Melting 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6761-1212
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diode KVP 83 A
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Industrial Fabrication One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial 製造装置 溶接 4 切断 5 融解 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6792-1304-INFB
diode KVP 83 A
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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