A53 OPTO
Abstract: 2SD877 AC74
Text: tôshïbT'oiIcréT 9097250 ë Tôptqï TOSHIBA "5t DE Jj T0T72SD OOQVa dT d | ‘ S6C 07 83 9 CD I S C R E T E / O P T O Ü -fLjy-Ö J SIL IC O N NPN T R IP L E D IF F U SE D TYPE INDUSTRIAL APPLICATIONS U n it in mm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING-APPLICATIONS.
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-65VL75
l1tllillItlllllllMIIItlMllllMIIMIIIII11ll
A53 OPTO
2SD877
AC74
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MG15C4HM1
Abstract: 2sk57 78MG Dc172SD 2sk toshiba 394 opto 2SK578 .Dt3
Text: TOSHIBA ~TÜ OISCRETE/OPTOJ DE I T0T72SD □01fc,3fl2 1 f~r_ 9 0 D 1 63Ö2 9097250 TOSHIBA D ÏSCRETE/OPTO ^siubt SEMICONDUCTOR 2SK 5 7 8 D T- 3^-/3 ~7~' 3 M G 1 5 C 4 H M 1 TECHNICAL D A ÎA ‘ 7 (150V/15A) EQUIVALEN CIRCUIT OUT LINE CO f-. in u; CM Weight : 9.75g
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T0T72SD
MG15C4HM1
50V/15A)
140gr
001h3Ã
Dr-37-
2sk578
MG15C4HM1
2sk57
78MG
Dc172SD
2sk toshiba
394 opto
.Dt3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
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YTFP251
070fl
lDSS-250uA
250uA
Ta-25Â
f100V
ID-30A
IDR-30A
00A/us
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A1203
Abstract: JS8851-AS MW1011
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8851-AS
24dBmatf
15GHz
18GHz
15GHz
A1203
JS8851-AS
MW1011
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1 OB Features • High power - P ^ b = 40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1cjB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications CE = 25° C
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TIM1414-1
0G22322
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Untitled
Abstract: No abstract text available
Text: TLP733,734 GaAs IRED a PHOTO-TRANSISTOR TLP733 OFFICE M ACHINE. HOUSEHOLD USE EQUIPM ENT. SOLID STATE R ELA Y. SWITCHING POW ER SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a
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TLP733
TLP733)
TLP734
UL1577,
E67349
BS415
BS7002
EN60950)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz
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TIM7785-8SL
TCH7250
TIM7785-8SL
MW51090196
TGT725D
DG227D4
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mg50g2
Abstract: 16441 MG50G2CH1 lt 7550
Text: •Ì0 DE TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO ¿/oáhiha SEMICONDUCTOR 90D 0Dlt,4Ml a I 16441 D TOSHIBA GTR MODULE MG50G2CH1 TECHNICAL DATA SILICON N-CHANNEL MOS+NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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MG50G2CH1
mg50g2
16441
MG50G2CH1
lt 7550
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Untitled
Abstract: No abstract text available
Text: - :- TCD5301BD GENERAL TCD5301BD is an interline CCD area image sensor developed for a NTSC system Color television camera. This device has signal pixels of 682 horizontal x 492 (vertical), and its im age size agrees with 1 / 2 inch type
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TCD5301BD
TCD5301BD
DDE131D
TCH725IU
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TCD5241BD
Abstract: TCD5251 TCD5241B
Text: TCD6219AF SUB-CARRIER PULSE GENERATING EXTERNAL SYNCHRONIZATION 1C The C M O S LSI of TC6219AF w as developed to generate sub-carrier pulse for color CCDs, TCD5241BD and TCD5251BD. The TC6219AF can be combined with TC6220AF or TC6133AF and a vertical clock driver to constitute the
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TCD6219AF
TC6219AF
TCD5241BD
TCD5251BD.
TC6220AF
TC6133AF
TCDS251BD.
T0T72S0
TCD5251
TCD5241B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8850A-AS
15GHz
18GHz
H7E50
MW10100196
TGT72SÃ
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2SC1199
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO* 9097250 St, T O SH IB A DE p TDTVSSD 0DD7MM4 2 | CDI S C R E T E / O PT O 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. gfe. 39MAX • HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.
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2SC1199
200MHz
10kHz
39MAX
0a45MAX
2SC1199
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