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    T1345 Search Results

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    T1345 Price and Stock

    TE Connectivity RT134524

    RELAY GEN PURPOSE SPST 12A 24V
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    DigiKey RT134524 Tube 1,000
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    Avnet Americas RT134524 Bulk 1,000
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    Newark RT134524 Bulk 1,000
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    RS RT134524 Bulk 14 Weeks 1,000
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    Master Electronics RT134524
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    Rochester Electronics LLC SFT1345-H

    MOSFET P-CH 100V 11A TP
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    DigiKey SFT1345-H Bulk 720
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    onsemi SFT1345-H

    MOSFET P-CH 100V 11A TP
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    Rochester Electronics SFT1345-H 22,837 1
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    Rochester Electronics LLC SMBT1345LT1

    SS SOT23 GP XSTR SPCL TR
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    DigiKey SMBT1345LT1 Bulk 11,539
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    onsemi SFT1345-TL-H

    MOSFET P-CH 100V 11A TP-FA
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    SFT1345-TL-H Digi-Reel 1
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    SFT1345-TL-H Cut Tape
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    Avnet Americas SFT1345-TL-H Reel 0 Weeks, 2 Days 232
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    Newark SFT1345-TL-H Reel 700
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    Bristol Electronics SFT1345-TL-H 17,200
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    Rochester Electronics SFT1345-TL-H 942 1
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    NexGen Digital SFT1345-TL-H 950
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    Flip Electronics SFT1345-TL-H 310
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    Win Source Electronics SFT1345-TL-H 1,200
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    T1345 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T1345 Ordering number : EN8987A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET T1345 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=210mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1020pF(typ.)


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    SFT1345 EN8987A 1020pF PDF

    s1d13715

    Abstract: 1066H LCD sharp 320X320 T-1228 T-1227 phone 14 pin vga camera pinout T1128 T1429 1520H RGB565 to rgb888 epson
    Text: S1D13715 Mobile Graphics Engine with Megapixel Support Hardware Functional Specification Document Number: X52A-A-001-07 SEIKO EPSON CORPORATION 2002-2008. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


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    S1D13715 X52A-A-001-07 X52A-A-001-02 0128h] 012Ah] X52A-A-001-01 1066H LCD sharp 320X320 T-1228 T-1227 phone 14 pin vga camera pinout T1128 T1429 1520H RGB565 to rgb888 epson PDF

    13451

    Abstract: T-13451
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 1CT : 1.8CT* Turns Ratio + 2% PARAMETER MIN. MAX. 22 Open Circuit Inductance SCHEMATIC DIAGRAM UNITS mHy Leakage Inductance 15 µHy Interwinding Capacitance (CW/W) 100 pF 7 1 6 Pri


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    41003/EN 700mV UL94-VO 10KHz T-13451 13451 T-13451 PDF

    13453

    Abstract: T-13453 needle flame test hipot pulse
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 1CT : 2.5CT* Turns Ratio + 2% SCHEMATIC DIAGRAM PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy Leakage Inductance 30 µHy Interwinding Capacitance (CW/W) 100 pF 7 1 6 Pri


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    41003/EN 700mV UL94-VO 10KHz T-13453 13453 T-13453 needle flame test hipot pulse PDF

    13450

    Abstract: T-13450
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio + 2% SCHEMATIC DIAGRAM 1CT : 1CT PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy 5 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD) 40


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    41003/EN 700mV UL94-VO 10KHz T-13450 13450 T-13450 PDF

    T-1345

    Abstract: t1345
    Text: T1345 Ordering number : EN8987 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET T1345 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=210mΩ(typ.) 4V drive • • Input Capacitance Ciss=1020pF(typ.) Halogen free compliance


    Original
    EN8987 SFT1345 1020pF PW10s) PW10s, T-1345 t1345 PDF

    13454

    Abstract: T-13454
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 1CT : 2.5CT* Turns Ratio + 2% PARAMETER MIN. MAX. 22 Open Circuit Inductance SCHEMATIC DIAGRAM UNITS mHy Leakage Inductance 40 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD)


    Original
    41003/EN 700mV UL94-VO 10KHz T-13454 13454 T-13454 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8987B T1345 Power MOSFET http://onsemi.com –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • • ON-resistance RDS on 1=210mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1020pF(typ.) Protection diode in


    Original
    EN8987B SFT1345 1020pF PW10s) PW10s, PDF

    13455

    Abstract: T-13455
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio + 2% SCHEMATIC DIAGRAM 1CT : 2CT PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy Leakage Inductance 11 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD)


    Original
    41003/EN 700mV UL94-VO 10KHz T-13455 13455 T-13455 PDF

    13452

    Abstract: T-13452
    Text: ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio + 2% SCHEMATIC DIAGRAM 1CT : 2CT PARAMETER MIN. MAX. 22 Open Circuit Inductance UNITS mHy Leakage Inductance 15 µHy Interwinding Capacitance (CW/W) 100 pF Distributed Capacitance (CD)


    Original
    41003/EN 700mV UL94-VO 10KHz T-13452 13452 T-13452 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8987B T1345 Power MOSFET http://onsemi.com –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • • ON-resistance RDS on 1=210mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1020pF(typ.) Protection diode in


    Original
    EN8987B SFT1345 1020pF PDF

    bt134

    Abstract: BT134-500D BT134g triac bt134 D8387 triac BT 06 400 triac BT 16 rating TTC 103 BT134F BT134 TRIAC
    Text: PHILIPS INTERNAT IO NAL b5E D • 711002b 00b2221 bTT H P H I N BT134 SERIES TRIACS Glass-passivated 4 Ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance with very low thermal


    OCR Scan
    711002b 00b2221 bt134-500 BT134G BT134 0b2530 BT134F BT134-500D triac bt134 D8387 triac BT 06 400 triac BT 16 rating TTC 103 BT134 TRIAC PDF