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    HYB18H512322BF

    Abstract: qimonda hyb18h5
    Text: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet


    Original     		PDF IDRD51-0-A1F1C 512-Mbit 08312007-N57X-JNTM HYB18H512322BF qimonda hyb18h5

    Untitled

    Abstract: No abstract text available
    Text: November 2008 IDRD51-0-A1F1C–[32C/40D] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.12 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40D] Revision History: 2008-11, Rev. 1.12 Page Subjects major changes since last revision


    Original     		PDF IDRD51-0-A1F1C­ 32C/40D] 512-Mbit IDRD51-0-A1F1C

    xdr rambus

    Abstract: xdr elpida
    Text: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are


    Original     		PDF 8x16Mx4 512Mb DL-0211 xdr rambus xdr elpida

    014701 b

    Abstract: 8x4Mx16
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E31 014701 b 8x4Mx16

    8x4Mx16

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E20 8x4Mx16

    XDR Rambus

    Abstract: 8x4Mx16
    Text: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low


    Original     		PDF 8x4Mx16/8/4/2 512Mb DL-0476 XDR Rambus 8x4Mx16

    Rambus XDR

    Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E40 Rambus XDR XDR Rambus EDX5116ADSE-3C-E 8x4Mx16

    XDR Rambus

    Abstract: EDX5116ACSE xdr elpida
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE E0881E20 XDR Rambus xdr elpida

    EDX5116ADSE-3C-E

    Abstract: EDX5116ADSE
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E30 EDX5116ADSE-3C-E

    IDRD51-0-A1F1C

    Abstract: No abstract text available
    Text: October 2008 IDRD51-0-A1F1C–[32C/40C] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.10 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40C] Revision History: 2008-10, Rev. 1.10 Page Subjects major changes since last revision


    Original     		PDF IDRD51-0-A1F1C­ 32C/40C] 512-Mbit IDRD51-0-A1F1C 10292008-600R-IXL7

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.


    Original     		PDF EDX1032BBBG EDX1032BBBG M01E1007 E1819E20

    EDX5116ACSE

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE M01E0107 E0881E10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E40

    XDR Rambus

    Abstract: 8H001
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE E0643E40 XDR Rambus 8H001

    E1819E20

    Abstract: XDR 1gb EDX1032BBBG
    Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.


    Original     		PDF EDX1032BBBG EDX1032BBBG EDX1032BBBG, M01E1007 E1819E20 E1819E20 XDR 1gb

    EDX5116ACSE-3C-E

    Abstract: EDX5116ACSE X5116
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE M01E0107 E0881E20 EDX5116ACSE-3C-E X5116

    DQ15d

    Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E40 DQ15d EDX5116ADSE-3C-E x5116 E1033E40 T21at 8x4Mx16

    TC59YM916AMG32A

    Abstract: XDR DRAM XDR Rambus Diode smd BD s18 smd ra6 TC59YM916AMG24A Rambus XDR
    Text: TC59YM916AMG24A,32A,32B,40B TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free Overview The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		PDF TC59YM916AMG24A 512Mb TC59YM916AMG32A XDR DRAM XDR Rambus Diode smd BD s18 smd ra6 Rambus XDR