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    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    t29n15e

    Abstract: AN569 MTB29N15E MTB29N15ET4
    Text: MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTB29N15E r14525 MTB29N15E/D t29n15e AN569 MTB29N15E MTB29N15ET4

    t29n15e

    Abstract: mosfet transistor 400 volts.100 amperes J 350 FET
    Text: MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTB29N15E MTB29N15E/D t29n15e mosfet transistor 400 volts.100 amperes J 350 FET