Untitled
Abstract: No abstract text available
Text: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N
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2N5660
2N5661
2N5662
2N5663
MIL-S-19500/454
2N5660,
2N5661
25iTlA
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PDF
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UNITRODE TRANSISTORS
Abstract: F-111
Text: ^5 UNITRODE CORP □D1GÛ21 7 T ~ Ô347963 UNITRODE CORP 92 D 10821 D/ -37-0 UFNF110 UFNF111 U F N F I 12 u fn fiis POWER MOSFET TRANSISTORS 100 Volt, 0.60 Ohm N-Channel D E S C R IP T IO N The Unltrode power M O S F E T d esign utilizes the m ost advanced technology available.
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UFNF110
UFNF111
T347Tti3
UFNF111
UFNF112
UFNF113
FNF110
UNITRODE TRANSISTORS
F-111
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2N6756
Abstract: 2N6755
Text: UNITRODE CORP TS 9347963 UNITRODE CORP '' P O W E R M O S F E Î DE § ^ 3 4 7 ^ 3 920 T R A N S I S T O R S 10492 00104^2 0 T , JTX, JTXV ¡ ¡ ¡ g * 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power M OSFET design utilizes the most advanced technology available.
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IL-S-19500/542A
2N6756
2N6755
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lt 0210
Abstract: UFND210 unitrode stackable rectifier
Text: /_ UNITRODE CORP TS 1 7 1 ^3 4 7 ^ 3 001000e] POWER M O S FE T T R A N S IS T O R S H d| io 20Q Volt, 1.5 Ohm N-Channel " * * 35 FEATURES DESCRIPTION • • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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001000e
T347Tti3
UFND210
UFND213
lt 0210
unitrode stackable rectifier
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2n6796
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 U N ITRO D E TE CORP D E ~ | T 3 M? T ta3 92D POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel 10566 DDlGSbb D JTX JTXVS 2Q T'3<?-o • ? FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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2N6795
2N6796
2n6796
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