2SC5415
Abstract: ta1022 nte 1606
Text: Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • High gain : S21e =9dB typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. 2 unit:mm 2038A [2SC5415]
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ENN5911
2SC5415
2SC5415]
25max
2SC5415
ta1022
nte 1606
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ta1022
Abstract: 2SC5415
Text: Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 • High gain : ⏐S21e⏐ =9dB typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. unit:mm 2038A [2SC5415]
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ENN5911
2SC5415
2SC5415]
25max
ta1022
2SC5415
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2038
Abstract: 2SC5415 N5911 IC 2164
Text: 注文コード No. N5911 No. 三洋半導体ニューズ 5911 22098 新 NPNピタキシァルプレ−ナ形シリコントランジスタ 2SC5415 特長 高周波低雑音増幅用 2 ・高利得である：│S21e│ ＝9dB typ f＝1GHz ・しゃ断周波数が高い：fT＝6.7GHz typ
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N5911
2SC5415
250mm
VCB10VIE0
VCE5VIC30mA
VCE5VIC70mA
VCE5VIC30mAf
2SC541530mA
90E180
2038
2SC5415
N5911
IC 2164
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