RUR30120
Abstract: RURP30120
Text: RURP30120 Data Sheet January 2000 File Number 3397.3 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar
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RURP30120
RURP30120
110ns)
110ns
RUR30120
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RURG30120CC
Abstract: URG30120C
Text: RURG30120CC Data Sheet January 2000 File Number 3400.3 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted
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RURG30120CC
RURG30120CC
110ns)
110ns
URG30120C
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RURG30120CC
Abstract: URG30120C
Text: RURG30120CC Data Sheet Title UR 012 C bt A, 00V rafa Dual ode) utho eyrds terrpoon, minctor, ache ergy ted, itch January 2000 File Number 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns). It has low forward
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RURG30120CC
RURG30120CC
110ns)
110ns
URG30120C
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RURG30120CC
Abstract: URG30120C
Text: RURG30120CC Data Sheet January 2002 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RURG30120CC
RURG30120CC
110ns)
110ns
175oC
URG30120C
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PDF
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RURP30120
Abstract: RUR30120
Text: RURP30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RURP30120
RURP30120
110ns)
110ns
175oC
RUR30120
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PDF
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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RURG30120
Abstract: TA49031
Text: RURG30120 Data Sheet January 2000 File Number 3399.3 30A, 1200V Ultrafast Diode Features The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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Original
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RURG30120
RURG30120
110ns)
110ns
TA49031
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RURG30120
Abstract: No abstract text available
Text: RURG30120 Data Sheet January 2000 File Number 3399.3 30A, 1200V Ultrafast Diode Features Title UR 012 The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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Original
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RURG30120
RURG30120
110ns)
110ns
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PDF
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RUR30120
Abstract: RURP30120
Text: RURP30120 Data Sheet January 2000 File Number 3397.3 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar
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Original
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RURP30120
RURP30120
110ns)
110ns
RUR30120
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PDF
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RURG30120
Abstract: No abstract text available
Text: RURG30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RURG30120
RURG30120
110ns)
110ns
175oC
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PDF
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