g7n60b3d
Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
g7n60b3d
igbt g7n60b3d
G7N60B3
HGT1S7N60B3DS9A
RHRD660
2MH22
|
RHRD660
Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Text: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
|
Original
|
PDF
|
RHRD640,
RHRD650,
RHRD660,
RHRD640S,
RHRD650S,
RHRD660S
175oC
O-251
O-252
RHRD660
rhr660
rhr650
RHRD650
RHRD640S
RHRD660S
RHRD660S9A
RHR640
RHRD640
RHRD650S
|
Untitled
Abstract: No abstract text available
Text: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
|
Original
|
PDF
|
HGT1S7N60B3DS
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
|
g7n60
Abstract: G7N60B3
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
g7n60
G7N60B3
|
RHRP640CC
Abstract: RHRP650CC RHRP660CC TB334
Text: RHRP640CC, RHRP650CC, RHRP660CC January 2002 6A, 400V - 600V Hyperfast Dual Diodes Features RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns . They have half the recovery time of ultrafast diodes and are
|
Original
|
PDF
|
RHRP640CC,
RHRP650CC,
RHRP660CC
RHRP650CC
RHRP660CC
175oC
RHRP640CC
TB334
|
G7N60
Abstract: G7N60C3D zener diode gem HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
150oC.
TA49115.
TA49057.
G7N60
G7N60C3D
zener diode gem
HGT1S7N60C3DS9A
TA49121
|
8508 zener
Abstract: g7N60C3D g7n60c HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS TM Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
|
Original
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
150oC.
TA49115.
TA49057.
8508 zener
g7N60C3D
g7n60c
HGT1S7N60C3DS9A
TA49121
|
G7N60
Abstract: G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
G7N60
G7N60B3D
tb105
igbt g7n60b3d
HGT1S7N60B3DS9A
RHRD660
|
rhr660
Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
Text: RHRD660, RHRD660S Data Sheet Title HR 60, HRD 0S bt A, 0V pert odes January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride
|
Original
|
PDF
|
RHRD660,
RHRD660S
RHRD660
RHRD660S
rhr660
RHRD660S9A
RHR66
|
g7N60C3D
Abstract: No abstract text available
Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and
|
Original
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3DS,
HGT1S7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
150oC.
TA49115.
TA49057.
140nild
g7N60C3D
|
rhr660
Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
Text: RHRD660, RHRD660S Data Sheet January 2002 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRD660,
RHRD660S
RHRD660
RHRD660S
rhr660
RHRD660S9A
RHR66
|
G7N60B3D
Abstract: G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 TA49190
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
G7N60B3D
G7N60B3
HGT1S7N60B3DS9A
RHRD660
TA49190
|
rhr660
Abstract: RHRD660 RHRD660S RHRD660S9A
Text: RHRD660, RHRD660S Data Sheet January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride
|
Original
|
PDF
|
RHRD660,
RHRD660S
RHRD660
RHRD660S
175oC
rhr660
RHRD660S9A
|
G7N60C3D
Abstract: G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and
|
Original
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3DS,
HGT1S7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
150oC.
TA49115.
TA49057.
140ns
G7N60C3D
G7N60C3
G7N60
DIODE 809 marking
HGTP7N60C3D
RHRD660
HGT1S7N60C3DS
HGT1S7N60C3DS9A
TA49121
|
|
|
Untitled
Abstract: No abstract text available
Text: RHRP640CC, RHRP650CC, RHRP660CC S E M I C O N D U C T O R 6A, 400V - 600V Hyperfast Dual Diodes January 1998 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns .
|
Original
|
PDF
|
RHRP640CC,
RHRP650CC,
RHRP660CC
RHRP650CC
RHRP660CC
TA49057.
1-800-4-HARRIS
|
g7N60C3D
Abstract: G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A
Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and
|
Original
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3DS,
HGT1S7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
150oC.
TA49115.
TA49057.
140ns
g7N60C3D
G7N60
G7N60C3
TA49115
TA49121
G7N60c
hyperfast diode reference guide
HGT1S7N60C3DS
HGT1S7N60C3DS9A
|
rhr660
Abstract: TA49057 RHRD660 RHRD660S RHRD660S9A UJ45
Text: RHRD660, RHRD660S in t e r r ii m i J a n u a ry . Data Sheet File Num ber 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride
|
OCR Scan
|
PDF
|
RHRD660,
RHRD660S
RHRD660
RHRD660S
TA49057.
rhr660
TA49057
RHRD660S9A
UJ45
|
rhr660
Abstract: No abstract text available
Text: I-LA JR F R IS s EM, c o N0 u c T 0R RHRD640, RHRD650, RHRD660, RHRD640S RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . <30ns • Operating Temperature. +175°C • Reverse Voltage Up To.
|
OCR Scan
|
PDF
|
RHRD640,
RHRD650,
RHRD660,
RHRD640S)
RHRD650S,
RHRD660S
O-251
O-252
rhr660
|
g7n60b3d
Abstract: G7N60B3 G7N60 igbt g7n60b3d N 407 Diode
Text: HARRIS HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS
|
OCR Scan
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3D,
HGT1S7N60B3DS
HGT1S7N60B3D
HGT1S7N60B3DS
TA49190.
RHRD660
TA49057)
1-800-4-HARRIS
g7n60b3d
G7N60B3
G7N60
igbt g7n60b3d
N 407 Diode
|
g7n60b3d
Abstract: igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 IN8001
Text: in t e HGTP7N60B3D, HGT1S7N60B3DS r r ii J a n u a ry . m D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
|
OCR Scan
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
TA49190.
RHRD660
TA49057)
g7n60b3d
igbt g7n60b3d
476 10R 931
g7n60b3
C110
HGT1S7N60B3DS9A
RHRD660
IN8001
|
igbt 600V
Abstract: g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D LD26
Text: HGTP7N60C3D, HGT1S7N60C3DS interrii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and H G T1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
|
OCR Scan
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
TA49115.
TA49057.
igbt 600V
g7n60c
TA49121
G7N60C3D
50QL
HGT1S7N60C3D
HGT1S7N60C3DS9A
LD26
|
7N60C3
Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C
|
OCR Scan
|
PDF
|
7N60C3D,
HGT1S7N60C3DS
O-22QAB
O-262AA
HGTP7N60C3D,
HGT1S7N60C3D
HGT1S7N60C3DS
-800-4-H
7N60C3
7N60C3D
S7N60
g7N60C3D
Zener Diode LT 432
diode lt 823
S7N60C3D
600VU
NT 407 F power transistor
|
Untitled
Abstract: No abstract text available
Text: HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 25°C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining
|
OCR Scan
|
PDF
|
HGTP7N60B3D,
HGT1S7N60B3D,
HGT1S7N60B3DS
HGT1S7N60B3D
TA49190.
RHRD660
TA49057)
1-800-4-HARRIS
|
Untitled
Abstract: No abstract text available
Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS H A F R R IS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features • . • • • • JEDEC TO-220AB 14A, 600V at TC = +25°C 600V Switching SOA Capability
|
OCR Scan
|
PDF
|
HGTP7N60C3D,
HGT1S7N60C3D,
HGT1S7N60C3DS
O-220AB
140ns
O-262AA
HGT1S7N60C3D
1-800-4-HARRIS
|