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KEMET Corporation C315C334K5R5TA9192 .330UF 50.0V
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DigiKey	C315C334K5R5TA9192	Bulk			1,500	1 - 10 - 100 - 1000 - 10000 $0.14742	Buy Now
Essentra Components DLCBSTA-9-19
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TA919 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TA9192A		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
TA9192B		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
TA9193		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
TA9193		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
TA9195A		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
TA9195B		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
TA9195B		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

TA919 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ta9192 Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15 Text: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,	Original	PDF	O205AF) RFL4N12, RFL4N15 25BVDSS AN7254 AN7260. ta9192 TA919 AN7260 RFL4N12 RFL4N15
ta9192 Abstract: No abstract text available Text: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFL4N12, RFL4N15 TA9192. AN7254 AN7260. ta9192
3N45 Abstract: 35165 TA9193 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TA9232 rca application notes 35169 Text: Standard Power M O S F E T s _ File Number 1384 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors 3 A, 450 and 500 V rDs on : 3 0 Features: • SOA is p o w e r-d is s ip a tio n lim ite d	OCR Scan	PDF	RFM3N45, RFM3N50, RFP3N45, RFP3N50 92CS-3374I RFM3N45 RFM3N50 RFP3N45 RFP3N50 92CS-35I66R1 3N45 35165 TA9193 TA9232 rca application notes 35169
ta9230 Abstract: RFM15N12 RFM15N15 RFP15N12 RFP15N15 ta9195 Text: Standard Power MOSFETs RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m be r 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors 15 A, 120 V — 150 V rDs on : 0.15 fi Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds	OCR Scan	PDF	RFM15N12, RFM15N15, RFP15N12, RFP15N15 RFM15N12 RFM15N15 RFP15N12 RFP15N15* ta9230 RFP15N15 ta9195
M339 Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15 Text: □1 DE I 3fl7SDfll DDlflim S \| ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi	OCR Scan	PDF	3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192
5Q07 Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921 Text: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds	OCR Scan	PDF	RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFP2N12 RFP2N15* AN-7254 AN-7260. 5Q07 RFP mosfets RFP2N15 rfp1n12 ta9196 TA921
RFM3N45 Abstract: RFM3N50 RFP3N45 RFP3N50 TA9193 TA9232 92CS-3316Z Text: 3 8 7 5 0 8 1 G E S O L I D Standard Power MOSFETs S T A T E ^ 3 2 , D e I b ü T S G Ö 0 0 1 0 1 1 7 I fl I ” ' T~ V RFM3N45, RFM3N50, RFP3N45, RFP3N50 File N u m b e r 1384 Power M O S Field-Effect Transistors	OCR Scan	PDF	RFM3N45, RFM3N50, RFP3N45, RFP3N50 RFM3N45 RFM3N50 RFP3N45 92CS-35165 92CS-15I68R1 TA9193 TA9232 92CS-3316Z
RFM6N45 Abstract: RFM6N50 RFP6N45 RFP6N50 Text: Hi 3875081 G E SOLID 3fl7SGfll DOIAIS^ 4 T STATE Standard Power MOSFETs 01E 18129 D r-3 ? -// -_ •39-/3 RFM6N45.RFM6N50, RFP6N45, RFP6N50 File N u m b e r 1494 Power MOS Field-Effect Transistors TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	RFM6N45 -RFM6N50, RFP6N45, RFP6N50 RFM6N50 RFP6N45 RFP6N50* RFM6N45, RFM6N50,
2N15 Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12 Text: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode	OCR Scan	PDF	d7z39 RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFL1N15 RFP2N12 2N15 RFP2N15 RFP-zn rfp1n12
ta9192 Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15 Text: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s	OCR Scan	PDF	RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* ta9192 RFP10N15
10n12 Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12 Text: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V	OCR Scan	PDF	RFM10N12, RFM10N15, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* RFP10M12, 10n12 92CS-3780I ta9192 RFM1 RFP mosfets ta9212 A9212
RFP15N12 Abstract: RFP15N15 92CS-39526 RFM15N12 RFM15N15 TA9230 92CS-34019 Text: 01 3 8 75 0 8 1 G E SOLID De 3 f l7 50 ûl STATE Standard Pow er M O S F E T s 0 1E GD1Û173 18173 7 Di T ~ 3 ? - l RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m b e r 1443 N-Channel Enhancement-Mode	OCR Scan	PDF	RFM15N12, RFM15N15, RFP15N12, RFP15N15 RFM15N12 RFM15N15 RFP15N12 RFP15N15* 92CS-34923 92CS-34824 RFP15N15 92CS-39526 TA9230 92CS-34019