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    Untitled

    Abstract: No abstract text available
    Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    TB9414VA TB9414VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm


    Original
    TB9414VA 2002/95/EC 2002/96/EC TB9414VA 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm


    Original
    TB9414VA 2002/95/EC 2002/96/EC TB9414VA 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    VISHAY Optoelectronics

    Abstract: FVOV6870 MIL-HDBK-263
    Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    TB9414VA 2002/95/EC 2002/96/EC TB9414VA 18-Jul-08 VISHAY Optoelectronics FVOV6870 MIL-HDBK-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    TB9414VA TB9414VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    TB-94

    Abstract: No abstract text available
    Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm


    Original
    TB9414VA 2002/95/EC 2002/96/EC TB9414VA 11-Mar-11 TB-94 PDF

    FVOV6870

    Abstract: MIL-HDBK-263 VISHAY Optoelectronics
    Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    TB9414VA 2002/95/EC 2002/96/EC TB9414VA 18-Jul-08 FVOV6870 MIL-HDBK-263 VISHAY Optoelectronics PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare


    Original
    VMN-SG2200-1502 PDF