TC55B417P Search Results

TC55B417P Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC55B417P-10		Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets		Scan	PDF
TC55B417P-12		Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets		Scan	PDF

TC55B417P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TC55B417P Abstract: No abstract text available Text: 16,384 W ORD x 4 BIT BiCMOS STATIC RAM DESCRIPTION The TC55B417P/J is a 65,536 bits high speed static random access memory organized as 16,384 words by 4 bits using BiCMOS technology, and operated from a single 5 - volt supply. Toshiba’s high performance device technology provides both high speed and low power features with a maximum	OCR Scan	PDF	TC55B417P/J 10ns/12ns 120mA TC55B417P/Jâ TC55B417P/J-12 DIP24â TC55B417P
TC55328AP Abstract: TC55417J-15H AJ35 Text: High Speed Static RAM Capacity 64KBit Typ« No. Ofganizaion Min. Cycle Time ns TC55417J-15H 15 15 TC55417J-20H 20 20 TC55417J-25H 25 25 TC55417J-35H 35 35 TC55B417P/J-10 10 10 TC55B417P/J-12 12 12 16,384 x 4 TC5588P/J-15 15 15 TC5588P/J-20 20 20 25 25 35	OCR Scan	PDF	TC55417J-15H TC55417J-20H TC55417J-25H TC55417J-35H TC55B417P/J-10 64KBit TC55B417P/J-12 TC5588P/J-15 TC5588P/J-20 TC5588P/J-25 TC55328AP AJ35
TC55B417P Abstract: No abstract text available Text: INTEGRATED CIRCUIT T O S H IB A M O S D IG IT A L IN TE G R A TE D C IRC UIT TC 55B 417P/J - 1 0 , TC 55B 417P/J - 1 2 TOSHIBA TECHNICAL DATA 1 6 ,3 8 4 W O R D x SILICON GATE B iCM O S 4 BIT B iC M O S STA TIC R A M P R E L IM IN A R Y DESCR IPTIO N The TC55B417P/J is a 65,536 bits high speed static random access memory organized as 16,384 words	OCR Scan	PDF	417P/J TC55B417P/J 10ns/12ns 120mA SOJ24 TC55B417P
tc55416p Abstract: MB81C74-35 MCM6288P30 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25 Text: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS -1- y TOD (ns) y TWP min (ns) S t a t i c & tt TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) m M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N I DD max (mA)	OCR Scan	PDF	384X4) 22PiN7188 KM64B5B-25L LH5162-25 LH5162-35 LH5165-25 VB1C62P-55L V61CB2P-70 V61C62P-70L VT62KS4-25 tc55416p MB81C74-35 MCM6288P30 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	PDF	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
TC55B417P Abstract: No abstract text available Text: •1 s i I H 1 6 ,384 W O R D X * 4 BIT BiCMOS STATIC R A M DESCRIPTION The TC5SB417P/J is a 65,536 bits high speed static random access memory organized as 16,384 words by 4 bits using BiCMOS technology, and operated from a single 5 - volt supply. Toshiba’s high	OCR Scan	PDF	TC5SB417P/J 120mA TC55B417P/J TC55B417P/J--10, TC55B417P/J-12 DIP24-- TC55B417P
SR64K4-40 Abstract: tc55416p P4C188L-25 P4C188L-35 P4C188L-45 P4C188L-55 SR64K4-35 V61C62P70 SR64K4 UH6118-25 Text: - 72 6 4 K 4 X m £ tt £ CO TAAC max ns TCAC max (ns) TOE nax (ns) -, TOH (ns) CMOS + y TOD •ax (ns) '/ TWP S t a t i c RAM ( 1 6 3 8 4 x 4 ) tt i# (ns) TDS Bin (ns) « TDH min (ns) TWD •in (ns) TWR max (ns) 2 2 P ! N À * V D D or V C C I DD (V) (nA)	OCR Scan	PDF	P4C188L-25 P4CI88L-30 P4C1881-30 P40188L-35 VB1C62P-55L V61CB2P-70 V61C62P-70L VT62KS4-25 VTE2KS4-35 VTB2KS4-45 SR64K4-40 tc55416p P4C188L-35 P4C188L-45 P4C188L-55 SR64K4-35 V61C62P70 SR64K4 UH6118-25