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    TC58BYG2S0HBAI6 Price and Stock

    KIOXIA TC58BYG2S0HBAI6

    NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
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    Mouser Electronics TC58BYG2S0HBAI6
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    TC58BYG2S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58BYG2S0HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 4G PARALLEL 67VFBGA Original PDF

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    Abstract: No abstract text available
    Text: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.


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    TC58BYG2S0HBAI6 TC58BYG2S0HBAI6 2048blocks. 4224-byte 4224-bytes 2013-07-05C PDF