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    TC58NYG1S3 Price and Stock

    KIOXIA TC58NYG1S3HBAI6

    IC FLASH 2GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG1S3HBAI6 Tray 143 1
    • 1 $3.83
    • 10 $3.406
    • 100 $3.059
    • 1000 $2.73851
    • 10000 $2.68135
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    Mouser Electronics TC58NYG1S3HBAI6 142
    • 1 $3.78
    • 10 $3.36
    • 100 $3.36
    • 1000 $3.36
    • 10000 $3.36
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    KIOXIA TC58NYG1S3HBAI4

    IC FLASH 2GBIT PARALLEL 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG1S3HBAI4 Tray 210
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.58448
    • 10000 $3.58448
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    Mouser Electronics TC58NYG1S3HBAI4
    • 1 $3.83
    • 10 $3.48
    • 100 $3.48
    • 1000 $3.48
    • 10000 $3.48
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    Toshiba Electronic Devices & Storage Corporation TC58NYG1S3EBAI4

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC58NYG1S3EBAI4 16
    • 1 $12
    • 10 $8
    • 100 $8
    • 1000 $8
    • 10000 $8
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    Others TC58NYG1S3HBAI6

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    Chip 1 Exchange TC58NYG1S3HBAI6 116,246
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    TC58NYG1S3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NYG1S3EBAI4 Toshiba TC58NYG1S3 - IC FLASH 1.8V PROM, Programmable ROM Original PDF
    TC58NYG1S3HBAI4 Toshiba Memory America Integrated Circuits (ICs) - Memory - 2G NAND SLC 24NM BGA Original PDF
    TC58NYG1S3HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA Original PDF

    TC58NYG1S3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0

    tc58nyg1s3ebai5

    Abstract: TC58NYG1
    Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1

    TC58NYG1S3ETA00

    Abstract: TC58NYG1 TC58NYG1S3
    Text: TC58NYG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3ETA00 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETA00 TC58NYG1 TC58NYG1S3

    TC58NYG1S3ETAI0

    Abstract: 103A15
    Text: TC58NYG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3ETAI0 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETAI0 103A15

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NYG1S3HBAI4 TC58NYG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C

    THGBM4G4D1HBAIR

    Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR
    Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number


    Original     		PDF SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		PDF 48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25