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    TF 431 M Search Results

    TF 431 M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-9762201QEA Texas Instruments Quad LVDS Receiver 16-CDIP -55 to 125 Visit Texas Instruments Buy
    SN65LV1023ARHBR Texas Instruments 10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-VQFN -40 to 85 Visit Texas Instruments Buy
    SN65LV1224BDBR Texas Instruments 1:10 LVDS Serdes Receiver 100 - 660Mbps 28-SSOP -40 to 85 Visit Texas Instruments Buy
    SN65LVCP22DR Texas Instruments 2x2 Crosspoint Switch : LVDS Outputs 16-SOIC -40 to 85 Visit Texas Instruments Buy
    SN65LVCP23PW Texas Instruments 2x2 Crosspoint Switch : LVPECL Outputs 16-TSSOP -40 to 85 Visit Texas Instruments Buy
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    TF 431 M Price and Stock

    onsemi KA431SLMFTF

    Voltage References Shunt Regulator 2.5V Programmable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KA431SLMFTF 160,381
    • 1 $0.43
    • 10 $0.211
    • 100 $0.161
    • 1000 $0.159
    • 10000 $0.094
    		Buy Now

    onsemi KA431SMFTF

    Voltage References Shunt Regulator 2.5V Programmable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KA431SMFTF 91,488
    • 1 $0.47
    • 10 $0.17
    • 100 $0.099
    • 1000 $0.081
    • 10000 $0.071
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    onsemi KA431SAMFTF

    Voltage References Shunt Regulator 2.5V Programmable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KA431SAMFTF 79,604
    • 1 $0.52
    • 10 $0.257
    • 100 $0.15
    • 1000 $0.134
    • 10000 $0.094
    		Buy Now

    TAIYO YUDEN TMK063CG431JT-F

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 963-MSAST063SCG431JF RPLCMT PN 25V 430pF C0G (NP0) 0201 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMK063CG431JT-F 27,297
    • 1 $0.1
    • 10 $0.026
    • 100 $0.016
    • 1000 $0.012
    • 10000 $0.01
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    Micron Technology Inc MT40A1G16TB-062E IT:F TR

    DRAM DDR4 16G 1GX16 FBGA IT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MT40A1G16TB-062E IT:F TR 8,052
    • 1 $25.71
    • 10 $22.83
    • 100 $20.26
    • 1000 $18.85
    • 10000 $18.85
    		Buy Now
    Find more TF 431 M price and stock on Findchips.com

    TF 431 M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Crystal Oscillator

    Abstract: smd oscillators transistor 431 smd smd 431 431 smd smd transistor 431 E 431 04
    Text: Oscilent Corporation | 431 Series Surface Mount Crystal Oscillators Page 1 of 2 SMD Oscillators Series Number Package Description Last Modified 431 7 x 5 SMD Ceramic Low Jitter 5pS Jan. 01 2007 FEATURES - Ultra low jitter at 5 ps - Low power consumption - Standby function


    Original     		PDF

    BF 331

    Abstract: 10MEG DA10 MAX961 MAX962 DO122
    Text: * MAX961 FAMILY MACROMODELS * -* FEATURES: * Ultra-Fast, 7nS Propagation Delay 5mV overdrive * Rail-to-Rail Input Voltage Range * Low Power: 8.5mA Per Comparator (+5V) * Single 3V/5V Supply Operation * Available in 8-Pin uMAX/SO (Single MAX961)


    Original     		PDF MAX961 MAX961) MAX962) MAX961 MAX962 RIN12 DIA12 BF 331 10MEG DA10 MAX962 DO122

    DO122

    Abstract: BF181 bf 331 RIA23 10MEG MAX912 MAX913 DIA23 DO102 DO52
    Text: * MAX912 FAMILY MACROMODELS * -* FEATURES: * Ultra-Fast, 10nS Propagation Delay 5mV overdrive * Input Voltage Range Extends Below Negative Supply * Low Power: 6mA Per Comparator (+5V) * Single +5V or Dual +/-5V Supply Operation * Available in 8-Pin DIP/SO (Single MAX913)


    Original     		PDF MAX912 MAX913) 16-Pin MAX912) MAX912 MAX913 subc605 RIN12 DO122 BF181 bf 331 RIA23 10MEG MAX913 DIA23 DO102 DO52

    FII30-12E

    Abstract: No abstract text available
    Text: FII 30-12E NPT3 IGBT IC25 = 33 A = 1200 V VCES VCE sat typ. = 2.4 V Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 30-12E FII30-12E FII30-12E

    10MEG

    Abstract: MAX909 RIA22 RIA23
    Text: * MAX909 FAMILY MACROMODEL * -* FEATURES: * Fast, 40nS Propagation Delay 5mV overdrive * Wide Input Voltage Range Includes Ground * Internal Hysteresis for Clean Switching * Internal Latch * Available in 8-Pin DIP/SO (Single MAX909)


    Original     		PDF MAX909 MAX909) MAX909 RIN12 DIA12 DIA22 RIA22 10MEG RIA23

    Untitled

    Abstract: No abstract text available
    Text: PL602-35/-37/-38/-39 1 750kHz – 800MHz Low Phase Noise Multiplier XO 23456789A1BCD1EF9861C486181 FEATURES 1 XIN 2 XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 VDD / GND* SEL0^ / VDD* SEL1^ 12 11 10 9 SEL3^ 14 SEL2^ 15 OE 16 PL602-3x 1 2 3 4 GND 13 GND XOUT


    Original     		PDF PL602-35/-37/-38/-39 750kHz 800MHz 23456789A1BCD1EF9861 C4861 PL602-3x QFN-16L TSSOP-16L F61EB) B1D42F14356726

    TF 431 M

    Abstract: sfh siemens
    Text: SIEMENS CMPNTSi OPTO 44E D • A23b32b Q0DS15A 1 M S IE X S IE M E N S SFH 431 SERIES INFRARED EMITTER T-4M 1 FEATURES Absolute Maximum Rptffig • • • • Parameter Power Dissipation D C Forward Curran Surge Current Reverse VoitagsP*-! Storage Operatjg


    OCR Scan     		PDF SFH431 TF 431 M sfh siemens

    DIODE 433

    Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
    Text: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75


    OCR Scan     		PDF IRFF430/4317432/433 IRFF430 IRFF431 IRFF432 IRFF433 O-205AF T-39-Ã DIODE 433 tl 431 R 433 A F433 AC15A

    irf4321

    Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
    Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB


    OCR Scan     		PDF IRF430-433/IRF830-833 MTM/MTP4N45/4N50 T-39-11 O-204AA O-22QAB IRF430 IRF431 IRF432 IRF433 MTM4N45 irf4321 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


    OCR Scan     		PDF 34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431

    LM 471 APPLICATION

    Abstract: 500MHz7 4532 ct 3225 TAIYO NT TS-601
    Text: 7 i 7 " f h51y 7°tf — X T7 7~A— ! Ferrite chip beads lineup list £ BK vU-X'ts -f< T )-h ^ -v 7 ° t :-X 'T £ (FBM) v'J-X 2 0 < 7 ) v 'J - X T \ iliS -§ -7 -r > ^ G H The combination of the BK Series multilayer high-loss inductors and the FBM series wire wound chip ferrite beads allow you to cover a wide (broad) range of


    OCR Scan     		PDF 230NT 330-T 380NT 600-T 560NT 900-T 151-T 221-T 251NT 501NT LM 471 APPLICATION 500MHz7 4532 ct 3225 TAIYO NT TS-601

    TIL38

    Abstract: FPE500 diode TIL38 infrared-emitting TIL38 TX FPE104 FPE106 FPE510 FPE520 FPE530
    Text: 1-12 Infrared Photo Emitters If lF = 100 mA mA Max V T yp W aveleng th @ Peak E m ission nm Typ vF D evice No. D e s c rip tio n A xial In te n s ity lF = 100 mA m W /s r Typ Data Sheet Page No. FPE104 Lead Frame Package Narrow Beam 100 1.35 890 10 4-23 FPE106


    OCR Scan     		PDF FPE104 FPE106 FPE500 FPE510 FPE520 FPE530 FPE700 TIL38 TIL38 diode TIL38 infrared-emitting TIL38 TX

    IRF830

    Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
    Text: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re


    OCR Scan     		PDF IRF830/831/832/833 IRFP430/431Z432/433 b414e IRF830/IRFP430 IRF831 /IRFP431 IRF832/IRFP432 IRF833/IRFP433 IRF830 IRFP430 rectifier 832 IRF833 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832

    RCA 40313

    Abstract: RCA413 40328 RCA411 2N5415 40318 RCA 2N3439 2N3440 2N5840 2N6079
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40313 RCA413 40328 RCA411 2N5415 40318 RCA 2N3439 2N3440 2N5840 2N6079

    2SK1255

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK1255 135ft VOO-30V 2SK1255

    MG20G4GL1

    Abstract: mg20g4
    Text: MG20G4GL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 7-F A S T -O N -T A B # 1 1 0 4 -F A ST -O N -T A B # 2 5 0 FEATURES: . The Collector is Isolated from Case. . 4 Power Transistors and 4 Free Wheeling Diodes


    OCR Scan     		PDF MG20G4GL1 MG20G4GL1 mg20g4

    1431T

    Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17

    RCA 40250 transistor

    Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40250 transistor audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor

    MG100J2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG100J2YS1 HIGH P O W E R S W I T C H I N G APPLICATIONS, M O T O R CONT R O L APPLICATIONS. . High Input Impedance . High Speed : tf=0.35;is Max. trr=0.25ns(Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode


    OCR Scan     		PDF MG100J2YS1 MG100J2YS1

    2N3440 2N5416 REPLACEMENT

    Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 2N3440 2N5416 REPLACEMENT TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872

    h a 431 transistor

    Abstract: DARLINGTON ESM 30 diode ESM 5045D ESM5045D 431E ESM5045DV
    Text: PH I L I P S INTERNATIONAL 4SE D E3 711002b 0D31237 J 7 SPHIN ESM5045D V T -3 3 ~ 2 ? SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


    OCR Scan     		PDF 711002b 0D31237 ESM5045D OT227B. Csat/50 Csat/50--VBEoff h a 431 transistor DARLINGTON ESM 30 diode ESM 5045D 431E ESM5045DV

    ESM5045D

    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,


    OCR Scan     		PDF bbS3T31 ESM5045D Csat/50

    2SK1255

    Abstract: 2SK125
    Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK1255 2SK1255 2SK125

    SRAM_256KX16

    Abstract: 256KX16 a17at altl
    Text: ADVANCED CMOS SRAM KM616V4000AL/AL-L 256KX16 Bit CMOS Static RAM Low Voltage Operation GENERAL DESCRIPTION FEATURES • Fast Access Time : 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) : 3^W(Typ.) L-Version 1.5.« W(Typ.) LL-Version Operating


    OCR Scan     		PDF KM616V4000AL/AL-L 256KX16 120ns 12mWfTyp) I/016 KM616V4000ALT/ALT-L 44-pin KM616V4000AL/L-L IIO16 I/O15 SRAM_256KX16 a17at altl