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    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration


    Original
    PDF 300um TGF4350-EPU 0007-inch

    TGA4350EPU

    Abstract: TGF4350-EPU microwave heating source configuration
    Text: Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x


    Original
    PDF 300um TGF4350-EPU 0007-inch TGA4350EPU TGF4350-EPU microwave heating source configuration

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information January 18, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration


    Original
    PDF 300um TGF4350-EPU 0007-inch

    TGF4350-EPU

    Abstract: No abstract text available
    Text: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration


    OCR Scan
    PDF 300um TGF4350-EPU 0007-inch TGF4350-EPU

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x


    OCR Scan
    PDF 300um TGF4350-EPU 0007-inch