302203
Abstract: diode 1321 TGA8310 TGA8310-SCC
Text: T R I Q U I N T S E M I TGA8310-SCC C O N D U C Low-Noise Amplifier ● ● ● ● ● ● 2 to 20- GHz Frequency Range T O R , I N C . 8310 3.5- dB Noise Figur e Midband 1.4:1 Typical Input/Output SWR 17.5- dBm Output Power at 1- dB Gain Compr ession 9- dB Typical Gain
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TGA8310-SCC
TGA8310
302203
diode 1321
TGA8310-SCC
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TGA8310-SCC
Abstract: No abstract text available
Text: Product Data Sheet May 22, 2001 2 - 20GHz Low Noise Amplifier TGA8310-SCC Key Features and Performance • 2 to 20- GHz Frequency Range • 3.5 dB Noise Figure Midband • 1.4:1 Typical Input/Output SWR • 17.5 dBm Output Power at 1 dB Gain Compression • 9 dB Typical Gain
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20GHz
TGA8310-SCC
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0007-inch
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TGA8310-SCC
Abstract: No abstract text available
Text: Product Data Sheet June 12, 2002 2 - 20 GHz Low Noise Amplifier TGA8310-SCC Key Features and Performance • 2 to 20- GHz Frequency Range • 3.5 dB Noise Figure Midband • 1.4:1 Typical Input/Output SWR • 17.5 dBm Output Power at 1 dB Gain Compression
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TGA8310-SCC
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGA8300-SCC
Abstract: 5.5 GHz power amplifier
Text: Microwave/Millimeter-Wave Products TGA8300-SCC 2 – 18 GHz Gain Block Amplifier The TriQuint TGA8300-SCC is a GaAs monolithic distributed amplifier designed for use as a multi-octave, general-purpose gain block. Four 189 µm gate-width FETs provide 7.5 dB nominal gain and 5.5 dB noise figure
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TGA8300-SCC
TGA8300-SCC
TGA8310-SCC
5.5 GHz power amplifier
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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531 amplifier
Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Text: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB
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50-mW
DCS-1800
GA1110E-20
GA1210E-20
531 amplifier
14 Ghz microwave transceiver
power amplifier s band ghz mhz
10 ghz gain block
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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GaAs MESFET amplifier
Abstract: TGA8310-SCC TGA8349-SCC 05um
Text: 0.5-µm Low-Noise, Low-Current MesFET LNLC Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C TGA8310-SCC 2 to 20-GHz Frequency Range 3.5-dB Noise Figure Midband 1.4:1 Typical Input/Output SWR 17.5-dBm Output Power at 1-dB Gain Compr ession 9-dB Typical Gain # 4,115 x 2,362 x 0,102 mm 0.162 x 0.093 x 0.004 in. PHOTO ENLARGEMENT
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TGA8310-SCC
20-GHz
TGA8310
17-dB
20-GHz.
20-dB.
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C 8310 H 2 to 20-GHz Frequency Range 3.5-dB Noise Figure Midband 1.4:1 Typical Input/Output SWR 17.5-dBm Output Power at 1-dB Gain Compr ession 9-dB Typical Gain # 4,115 x 2,362 x 0,102 mm 0.162 x 0.093 x 0.004 in. PHOTO ENLARGEMENT
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20-GHz
TGA8310
17-dB
20-GHz.
20-dhes)
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