Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TH58NYG3S0HBAI6 Search Results

    SF Impression Pixel

    TH58NYG3S0HBAI6 Price and Stock

    KIOXIA TH58NYG3S0HBAI6

    IC FLASH 8GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TH58NYG3S0HBAI6 Tray 333 1
    • 1 $9.59
    • 10 $8.516
    • 100 $7.64663
    • 1000 $6.84343
    • 10000 $6.70017
    		Buy Now
    Mouser Electronics TH58NYG3S0HBAI6 1,231
    • 1 $9.11
    • 10 $8.39
    • 100 $7.35
    • 1000 $7.09
    • 10000 $7.02
    		Buy Now

    TH58NYG3S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TH58NYG3S0HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 8G PARALLEL 67VFBGA Original PDF

    TH58NYG3S0HBAI6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TH58NYG3S0HBAI6

    Abstract: No abstract text available
    Text: TH58NYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG3S0HBAI6 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.


    Original     		TH58NYG3S0HBAI6 TH58NYG3S0HBAI6 4096blocks. 4352-byte 2013-09-20C PDF