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    Untitled

    Abstract: No abstract text available
    Text: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub­


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    PDF 32Kx36 DQ0-DQ31 EDI82136C EDI82136C12GC EDI82136C15GC EDI82136C17GC EDI82136C20GC

    Untitled

    Abstract: No abstract text available
    Text: ^E D I E D I8 2 1 3 6 C H /fif/j Performance Megabit SRAM Badronic o«ign. me. 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM liF Û M Â T O Û i Features TheEDI82136Cisa1,179,648bitAsynchronousmemory core with transparent address and enable latches in the


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    PDF 32Kx36 TheEDI82136Cisa1 648bitAsynchronousmemory EDI82136C, daparitydeselectconfrolforx32bitoperation EDI82136C EDI82136C12GC EDI82136C15GC EDI82136C17GC

    Untitled

    Abstract: No abstract text available
    Text: ^EDI Electronic Designs tr>c. ' , transparent latches, dual polarity single enable, master write control, master output enable, four individual byte selects x8 orx9, andaparitydeselectcontrolforx32bitoperation. This feature provides flexible control over the device array during


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    PDF daparitydeselectcontrolforx32bitoperation A0-A14 32Kx18 DQ16-DQ31 EDI82136C EDI82136C20JB EDI82136C25JB EDI82136C30JB EDI82136C35JB