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    Phoenix Contact 3213976 (ALTERNATE: D-PTI/3B)

    Terminal Block End Cover, Gray, PT Series | Phoenix Contact 3213976
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    ITT Interconnect Solutions JANMS27467TI3B985

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    Phoenix Contact 3213976

    Terminal Block Tools & Accessories D-PTI/3B
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    Phoenix Contact D-PTI/3B

    End cover - length: 101 mm - width: 2.2 mm - height: 48.2 mm - color: gray
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    Master Electronics D-PTI/3B 596
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    TI3B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mc141625

    Abstract: MC141625FU MC141625/D
    Text: MOTOROLA SC bSE TELECOM D ti3b7SS3 0 GÛ 7 S S Û I M0T5 IbS MOTOROLA Order this document by MC141625/D m SEMICONDUCTOR TECHNICAL DATA MC141625 Advance Information Advanced NTSC/PAL Comb Filter CMOS The Advanced NTSC/PAL Comb Filter is a video signal processor for VCRs and


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    PDF MC141625/D MC141625 mc141625 MC141625FU MC141625/D

    MC145414

    Abstract: CVSD motorola
    Text: bbE ] ti3b7253 □ □fl'iSO? Sflfl «MOTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOTOROLA SC TELEC O M ) M C 145414 Dual Tkinable Low-Pass Sampled Data Filters The MC145414 is sampled data, switched capacitor filter 1Cintended to provide band limiting and signal restoration filtering. It is capable of operating from either


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    PDF ti3b7253 MC145414 MC145414 MC145414_ CVSD motorola

    Unit junction transistor UJT

    Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
    Text: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse


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    PDF b3b72SS 2N5431 2A-01 b3b72SS 10flA Unit junction transistor UJT ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc

    MV2112

    Abstract: MVC2114 MV2110 MV2114 dv60 ti3b
    Text: M O T O R O L A SC i D I O D E S / O P T O J 34 6 3 6 7 2 5 5 M O T O R O L A SC »F|ti3b?2SS 0030110 T J ” <D I O D E S / O P T O 34-C 38 1 1 0 D SILICON TUNING DIODE DICE continued) MVC2110 d ie n o . — SERIES LINE SOURCE — DV60 This die provides performance equal to or better than that of


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    PDF MVC2110 MV2110 MV2111 MV2112 MV2113 MV2114 MVC2110 MVC2111 MVC2112 MVC2113 MVC2114 MV2114 dv60 ti3b

    ZENER DIODE WITH 5 VOLTS OUTPUT

    Abstract: 20M diode zener LK 8CA 8CA LZ DIODE MLL5221A MLL5222A MLL5223A MLL5224A MLL5225A MLL5226A
    Text: MOTOROLA SC 1EE D I ti3b7aSS □□7CH 0 0 1 -CDIO DES/O PTOï - 1T -1 MLL5221A thru MLL5270A MOTOROLA SEM ICON DUCTOR TECHNICAL DATA LEADLESS GLASS ZENER D IO D ES 5 0 0 M IL LIW A TT H E R M E T IC A LL Y S EA L E D G L A S S S IL IC O N Z E N E R D IO D E S


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    PDF MLL5221A MLL5270A MLL5221A TA-25Â ZENER DIODE WITH 5 VOLTS OUTPUT 20M diode zener LK 8CA 8CA LZ DIODE MLL5222A MLL5223A MLL5224A MLL5225A MLL5226A

    mc145412

    Abstract: MC145413 145412 MC14551 Dtmfout MC145512
    Text: febE D • ti3b7ES3 ODflTSDD 1 2 3 ■ M0T5 MOTOROLA ■ SEMICONDUCTOR wm motorola sc > telecom TECHNICAL DATA MC145412 M CI 45413 MC145512 Advance Information Pulse/Tone Repertory Dialer Low Power Silicon-Gate CMOS The MC145412/13 and MC145512 are silicon gate, monolithic CMOS


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    PDF MC145412/13 MC145512 18-pin MC145413 500-Hz 18-Digit MC145412 MC145413-MC145512 145412 MC14551 Dtmfout

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D ifferential PECL to TTL Translator M C100ELT23 The MC100ELT23 is a dual differential PECL to TTL translator. Because PECL Positive ECL levels are used only +5V and ground are required. The small outline 8-lead SOIC package and the dual gate


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    PDF C100ELT23 MC100ELT23 ELT23 200mV BR1330

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C10EL05 M C100EL05 2 -ln p u t D iffe re n tia l A N D /N A N D The MC1OEL/100EL05 is a 2-input differential AND/NAND gate. The device is functionally equivalent to the E404 device with higher performance capabilities.


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    PDF C10EL05 C100EL05 MC1OEL/100EL05 b3b7252 DL140

    AN-1203

    Abstract: AM Transmitter block diagram tag e9
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14497 PCM Remote Control Transm itter p s u f f ix if II li PLASTIC DIP I HI CASE 707 The M C14497 is a PCM rem ote control tra nsm itte r realized in CMOS technology. Using a dual-single FSK/AM frequency bi-phase modulation, the


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    PDF MC14497 C14497 MC3373 DL128/D) MC14497. AN-1203 AM Transmitter block diagram tag e9

    Untitled

    Abstract: No abstract text available
    Text: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.


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    PDF C3346 MC3346 SO-14) ti3b7253 0GT8252 MC3346 b3b72S3

    SOT23 6pin MARKING 3F

    Abstract: marking 3f 6pin MBR7535 MBR7545
    Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF MBR7535 MBR7545 DO-35 SOT23 6pin MARKING 3F marking 3f 6pin MBR7545

    d 2095 transistor

    Abstract: No abstract text available
    Text: 6367254 MOTOROLA SC MOTOROLA Tti de| XSTRS/R F 9 6D 8 1 5 0 7 D * F 3 3 'i5 Order this data sheet by MJ200AV100/D tatTasM oofliso? b SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n P o w e r T ra n sisto r M o d u le M J 2 A V 1 Energy M anagem ent Series


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    PDF MJ200AV100/D MK145BP, MJ200AV100 d 2095 transistor

    1N5825

    Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
    Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5823 1N5824 1N5825 1N5825 diode 1N5825 N5824 1n6823 marking Bq sot23 1N5824 ON

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW51 MPSW51A* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector-Emltter Voltage MPSW51 MPSW51A v CEO -30 -40 Vdc Collector-Base Voltage MPSW51 MPSW51A


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    PDF MPSW51 MPSW51A* MPSW51A O-226AE) Res300

    2N4014

    Abstract: No abstract text available
    Text: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C


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    PDF 2N4014 2N4014 O-206AA) b3b7E54

    Untitled

    Abstract: No abstract text available
    Text: Order this document by LM2574/D MOTOROLA LM2574 A dvance Information Easy Switcher 0.5 A Step-Down Voltage Regulator EASY SWITCHER™ 0.5 A STEP-DOWN VOLTAGE REGULATOR The LM2574 series of regulators are monolithic integrated circuits Ideally suited for easy and convenient design of a step-down switching regulator


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    PDF LM2574/D LM2574 LM2574

    4170B

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process


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    PDF MCM54170B MCM5L4170B MCM5V4170B 54170B MCM54170BJ70 MCM54170BJ80 MCM54170BJ10 MCM5L4170BJ70 MCM5L4170BJ80 4170B

    12v dc full wave bridge rectifier

    Abstract: 5000 watt full bridge design 1N5S34
    Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5832 1N5834 1N5S34 12v dc full wave bridge rectifier 5000 watt full bridge design

    mtd10n05e

    Abstract: CASE369A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is


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    PDF MTD10N05E ti3b7S54 mtd10n05e CASE369A

    1N5831

    Abstract: E5 sot223 1N5829
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


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    PDF prop30 DO-35 1N5831 E5 sot223 1N5829

    DS5 2502

    Abstract: mc68150 motorola
    Text: MOTOROLA ' • b3b?5Mñ DlRlhhl 227 ■ MOTI b^MCesiVo/?5^ 6* SEMICONDUCTOR TECHNICAL DATA 32-B it to 32/16/8-B it Dynam ic READ/WRITE Bus Sizer M C 68150 The MC68150 Dynamic Bus Sizer is designed to allow the 32-bit MC68/LC/EC040 bus, or other 16- to 32-bit processors, to communicate


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    PDF 32/16/8-B MC68150 32-bit MC68/LC/EC040 68/EC040 MC68150. 25/33MHz 40MHz 40MHz DS5 2502 mc68150 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Phase-Frequency Detector MCH12140 MCK12140 The M C H /K 12140 is a phase fre q u en cy-d ete cto r intended fo r phase-locked loop applications w hich require a minimum am ount of phase and frequency difference at lock. W hen used in conjunction with


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    PDF MCH12140 MCK12140 MC12147, MC12148 MC12149 MC12040 pul68040, MC68LC040 MC68010, MC68020,

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder th is docum ent by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Tlining Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum


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    PDF MMBV432LT1/D V432LT1 OT-23 3ti72SS

    Valor lt6033

    Abstract: LT6033
    Text: Order this document by MC68160/D M M O TO R O LA MC68160 MC68160B MC68160C Enhanced Ethernet Transceiver The MC68160, B and C Enhanced Ethernet Interface Circuit is a BiCMOS device which supports both IEEE 802.3* Access Unit Interface (AUI) and 10BASE-T Twisted Pair (TP) Interface media connections through external


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    PDF MC68160/D MC68160 MC68160B MC68160C MC68160, 10BASE-T MC68360 Valor lt6033 LT6033