mc141625
Abstract: MC141625FU MC141625/D
Text: MOTOROLA SC bSE TELECOM D ti3b7SS3 0 GÛ 7 S S Û I M0T5 IbS MOTOROLA Order this document by MC141625/D m SEMICONDUCTOR TECHNICAL DATA MC141625 Advance Information Advanced NTSC/PAL Comb Filter CMOS The Advanced NTSC/PAL Comb Filter is a video signal processor for VCRs and
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MC141625/D
MC141625
mc141625
MC141625FU
MC141625/D
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MC145414
Abstract: CVSD motorola
Text: bbE ] ti3b7253 □ □fl'iSO? Sflfl «MOTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOTOROLA SC TELEC O M ) M C 145414 Dual Tkinable Low-Pass Sampled Data Filters The MC145414 is sampled data, switched capacitor filter 1Cintended to provide band limiting and signal restoration filtering. It is capable of operating from either
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ti3b7253
MC145414
MC145414
MC145414_
CVSD motorola
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Unit junction transistor UJT
Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
Text: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse
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b3b72SS
2N5431
2A-01
b3b72SS
10flA
Unit junction transistor UJT
ujt transistor
motorola ujt
motorola eb20
ujt as a relaxation oscillator
2N5431
CHARACTERISTICS OF UJT
Unijunction
EB20
transistor wc
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MV2112
Abstract: MVC2114 MV2110 MV2114 dv60 ti3b
Text: M O T O R O L A SC i D I O D E S / O P T O J 34 6 3 6 7 2 5 5 M O T O R O L A SC »F|ti3b?2SS 0030110 T J ” <D I O D E S / O P T O 34-C 38 1 1 0 D SILICON TUNING DIODE DICE continued) MVC2110 d ie n o . — SERIES LINE SOURCE — DV60 This die provides performance equal to or better than that of
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MVC2110
MV2110
MV2111
MV2112
MV2113
MV2114
MVC2110
MVC2111
MVC2112
MVC2113
MVC2114
MV2114
dv60
ti3b
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ZENER DIODE WITH 5 VOLTS OUTPUT
Abstract: 20M diode zener LK 8CA 8CA LZ DIODE MLL5221A MLL5222A MLL5223A MLL5224A MLL5225A MLL5226A
Text: MOTOROLA SC 1EE D I ti3b7aSS □□7CH 0 0 1 -CDIO DES/O PTOï - 1T -1 MLL5221A thru MLL5270A MOTOROLA SEM ICON DUCTOR TECHNICAL DATA LEADLESS GLASS ZENER D IO D ES 5 0 0 M IL LIW A TT H E R M E T IC A LL Y S EA L E D G L A S S S IL IC O N Z E N E R D IO D E S
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MLL5221A
MLL5270A
MLL5221A
TA-25Â
ZENER DIODE WITH 5 VOLTS OUTPUT
20M diode zener
LK 8CA
8CA LZ DIODE
MLL5222A
MLL5223A
MLL5224A
MLL5225A
MLL5226A
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mc145412
Abstract: MC145413 145412 MC14551 Dtmfout MC145512
Text: febE D • ti3b7ES3 ODflTSDD 1 2 3 ■ M0T5 MOTOROLA ■ SEMICONDUCTOR wm motorola sc > telecom TECHNICAL DATA MC145412 M CI 45413 MC145512 Advance Information Pulse/Tone Repertory Dialer Low Power Silicon-Gate CMOS The MC145412/13 and MC145512 are silicon gate, monolithic CMOS
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MC145412/13
MC145512
18-pin
MC145413
500-Hz
18-Digit
MC145412
MC145413-MC145512
145412
MC14551
Dtmfout
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D ifferential PECL to TTL Translator M C100ELT23 The MC100ELT23 is a dual differential PECL to TTL translator. Because PECL Positive ECL levels are used only +5V and ground are required. The small outline 8-lead SOIC package and the dual gate
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C100ELT23
MC100ELT23
ELT23
200mV
BR1330
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C10EL05 M C100EL05 2 -ln p u t D iffe re n tia l A N D /N A N D The MC1OEL/100EL05 is a 2-input differential AND/NAND gate. The device is functionally equivalent to the E404 device with higher performance capabilities.
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C10EL05
C100EL05
MC1OEL/100EL05
b3b7252
DL140
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AN-1203
Abstract: AM Transmitter block diagram tag e9
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14497 PCM Remote Control Transm itter p s u f f ix if II li PLASTIC DIP I HI CASE 707 The M C14497 is a PCM rem ote control tra nsm itte r realized in CMOS technology. Using a dual-single FSK/AM frequency bi-phase modulation, the
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MC14497
C14497
MC3373
DL128/D)
MC14497.
AN-1203
AM Transmitter block diagram
tag e9
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Untitled
Abstract: No abstract text available
Text: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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C3346
MC3346
SO-14)
ti3b7253
0GT8252
MC3346
b3b72S3
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SOT23 6pin MARKING 3F
Abstract: marking 3f 6pin MBR7535 MBR7545
Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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MBR7535
MBR7545
DO-35
SOT23 6pin MARKING 3F
marking 3f 6pin
MBR7545
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d 2095 transistor
Abstract: No abstract text available
Text: 6367254 MOTOROLA SC MOTOROLA Tti de| XSTRS/R F 9 6D 8 1 5 0 7 D * F 3 3 'i5 Order this data sheet by MJ200AV100/D tatTasM oofliso? b SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n P o w e r T ra n sisto r M o d u le M J 2 A V 1 Energy M anagem ent Series
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MJ200AV100/D
MK145BP,
MJ200AV100
d 2095 transistor
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1N5825
Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5823
1N5824
1N5825
1N5825
diode 1N5825
N5824
1n6823
marking Bq sot23
1N5824 ON
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW51 MPSW51A* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector-Emltter Voltage MPSW51 MPSW51A v CEO -30 -40 Vdc Collector-Base Voltage MPSW51 MPSW51A
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MPSW51
MPSW51A*
MPSW51A
O-226AE)
Res300
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2N4014
Abstract: No abstract text available
Text: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C
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2N4014
2N4014
O-206AA)
b3b7E54
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Untitled
Abstract: No abstract text available
Text: Order this document by LM2574/D MOTOROLA LM2574 A dvance Information Easy Switcher 0.5 A Step-Down Voltage Regulator EASY SWITCHER™ 0.5 A STEP-DOWN VOLTAGE REGULATOR The LM2574 series of regulators are monolithic integrated circuits Ideally suited for easy and convenient design of a step-down switching regulator
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LM2574/D
LM2574
LM2574
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4170B
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process
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MCM54170B
MCM5L4170B
MCM5V4170B
54170B
MCM54170BJ70
MCM54170BJ80
MCM54170BJ10
MCM5L4170BJ70
MCM5L4170BJ80
4170B
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12v dc full wave bridge rectifier
Abstract: 5000 watt full bridge design 1N5S34
Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5832
1N5834
1N5S34
12v dc full wave bridge rectifier
5000 watt full bridge design
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mtd10n05e
Abstract: CASE369A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is
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MTD10N05E
ti3b7S54
mtd10n05e
CASE369A
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1N5831
Abstract: E5 sot223 1N5829
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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prop30
DO-35
1N5831
E5 sot223
1N5829
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DS5 2502
Abstract: mc68150 motorola
Text: MOTOROLA ' • b3b?5Mñ DlRlhhl 227 ■ MOTI b^MCesiVo/?5^ 6* SEMICONDUCTOR TECHNICAL DATA 32-B it to 32/16/8-B it Dynam ic READ/WRITE Bus Sizer M C 68150 The MC68150 Dynamic Bus Sizer is designed to allow the 32-bit MC68/LC/EC040 bus, or other 16- to 32-bit processors, to communicate
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32/16/8-B
MC68150
32-bit
MC68/LC/EC040
68/EC040
MC68150.
25/33MHz
40MHz
40MHz
DS5 2502
mc68150 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Phase-Frequency Detector MCH12140 MCK12140 The M C H /K 12140 is a phase fre q u en cy-d ete cto r intended fo r phase-locked loop applications w hich require a minimum am ount of phase and frequency difference at lock. W hen used in conjunction with
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MCH12140
MCK12140
MC12147,
MC12148
MC12149
MC12040
pul68040,
MC68LC040
MC68010,
MC68020,
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder th is docum ent by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Tlining Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum
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MMBV432LT1/D
V432LT1
OT-23
3ti72SS
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Valor lt6033
Abstract: LT6033
Text: Order this document by MC68160/D M M O TO R O LA MC68160 MC68160B MC68160C Enhanced Ethernet Transceiver The MC68160, B and C Enhanced Ethernet Interface Circuit is a BiCMOS device which supports both IEEE 802.3* Access Unit Interface (AUI) and 10BASE-T Twisted Pair (TP) Interface media connections through external
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MC68160/D
MC68160
MC68160B
MC68160C
MC68160,
10BASE-T
MC68360
Valor lt6033
LT6033
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