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    Toshiba America Electronic Components TIM535935SL

    RF POWER FIELD EFFECT TRANSISTOR RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Junction FET
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    ComSIT USA TIM535935SL 5
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    Toshiba America Electronic Components TIM535916SL

    MICROWAVE POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TIM535916SL 4
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    TIM5359 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM5359-16 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM5359-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-16EL Toshiba TIM5359 - TRANSISTOR RF POWER, FET, FET RF Power Original PDF
    TIM5359-16L Toshiba Transistor Scan PDF
    TIM5359-16SL Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power Original PDF
    TIM5359-16UL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 42.5; G1dB (dB): 10; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B Original PDF
    TIM5359-30L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-35SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM5359-35SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM5359-4 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM5359-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-4 Toshiba POWER GAAS FET Scan PDF
    TIM5359-45SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 46.5; G1dB (dB): 9; Ids (A) Typ.: 9.6; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.8; Package Type: 2-16G1B Original PDF
    TIM5359-45SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM5359-45SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM5359-4SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-4UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-60SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-8 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM5359-8 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF

    TIM5359 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=8.5dB at 5.3GHz to 5.9GHz


    Original     		TIM5359-16SL TIM5359-16UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5359-4UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5359-16UL PDF

    TIM5359-8UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5359-8UL TIM5359-8UL PDF

    TIM5359-45SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-45SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level n HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz


    Original     		TIM5359-45SL TIM5359-45SL PDF

    TIM5359-80SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-80SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level n HIGH POWER P1dB=49.0dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=7.5dB at 5.3GHz to 5.9GHz


    Original     		TIM5359-80SL 7-AA02C) TIM5359-80SL PDF

    TIM5359-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.3 GHz to 5.9 GHz


    Original     		TIM5359-30L 2-16G1B) MW50680196 TIM5359-30L PDF

    TIM5359-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM5359-4 2-11D1B) MW50650196 TIM5359-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-4SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 5.3GHz to 5.9GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.5dB at 5.3GHz to 5.9GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C


    Original     		TIM5359-4SL TIM5359-4SL 2-11D1B) PDF

    TIM5359-60SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz


    Original     		TIM5359-60SL IDS13 TIM5359-60SL PDF

    TIM5359-8UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5359-8UL TIM5359-8UL PDF

    si2127

    Abstract: No abstract text available
    Text: TIM5359-8L FEATURES : • L O W IN T E R M O D U L A T I O N D I S T O R T I O N I M 3 = —4 5 dBc at Po = 2 8 dBm . Single Carrier Level • H IG H • H IG H G A IN G ^ B = 8. 5 d B at 5. 3 G H z to 5. 9 G Hz - B R O A D B A N D IN T E R N A L L Y M A T C H E D


    OCR Scan     		TIM5359-8L TIM5359-- si2127 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM5359-16 TIM5359-16 PDF

    si111

    Abstract: No abstract text available
    Text: TIM5359-4L FEATURES : • L O W IN T E R M O D U L A T IO N D IS TO R TIO N I M 3 = - 4 5 dBc at Po = 25 dBm, Single Carrier Level • HIG H GAIN G idB ~ 9- odB at 5. 3 GHz to 5. 9 GHz • BROAD BAND INTERNALLY M A T C H E D « H IG H POWER • HERMETICALLY SEALED PACKAGE


    OCR Scan     		TIM5359-4L si111 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - GldB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5359-4 MW50650196 TIM5359-4 1D172S0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIM5359-4L FEATURES : • L O W IN T E R M O D U L A T IO N D IS TO R TIO N I M 3 = —4 5 dBc at Po = 25 dBm, Single Carrier Level • HIG H GAIN G 1dB ~ 9- odB at 5. 3 GHz to 5. 9 GHz • BROAD BAND INTERNALLY M A T C H E D « H IG H POWER • HERMETICALLY SEALED PACKAGE


    OCR Scan     		TIM5359-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR TIM5359-45SL TECHNICAL DATA FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N IM 3 = - 4 5 d B c a t P o H IG H G AIN = 3 5 . 5 dBm, G 1dB = 9. 0 dB a t 5 .3 G H z to 5 .9 G H z S ingle C arrier Level


    OCR Scan     		TIM5359-45SL TIM5359-45SL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45 d B m a t 5 .3 G H z to 5.9 G H z


    OCR Scan     		TIM5359-30L MW50680196 TIM5359-30L PDF

    Untitled

    Abstract: No abstract text available
    Text: TIM5359-35SL FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY Tjadd = 38% at 5.3 to 5.9GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB =8.5 dB at 5.3 to 5.9GHz PldB = 45.5dBm at 5.3 to 5 9 GHz ■ BROAD BAND INTERNALLY MATCHED


    OCR Scan     		TIM5359-35SL -45dBc 2-16G1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs MICROWAVE SEMICONDUCTOR TIM5359 — 35SL TECHNICAL DATA FEATURES : HIGH EFFICIENCY • LOW INTERMODULATION DISTORTION T]add = 3 8 % at IM3 = -45d B c at Po = 35.0dB m to 5.9 GHz 5.3 HIGH GAIN ■ HIGH POWER P 1 dB = 45.5dB m at


    OCR Scan     		TIM5359 2-16G1B) TIM5359-35SL ------------TIM5359-35SL-----------POWER PDF

    Untitled

    Abstract: No abstract text available
    Text: TIM5359-35SL FEATURES : • HIGH EF F IC IEN C Y ■ LOW INTERMODULATION DISTORTION T|add = 38% at 5.3 to 5.9 GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH PO W ER G ld B = 8.5 dB at 5.3 to 5.9GHz P ld B = 45.5dBm at 5.3 to 5.9 GHz ■ B R O A D B A N D IN T E R N A LLY M ATCH ED


    OCR Scan     		TIM5359-35SL -45dBc 2-16G1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power • p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5359-16 MW50670196 0G2242b TIM5359-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz


    OCR Scan     		TIM5359-30L TIM5359-30L MW50680196 TCH7250 0Q22432 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39 dBm at 5.3 GHz to 5.9 GHz • High gain - G idB = 8.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5359-8 TIM5359-8 MW50660196 PDF