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    onsemi TIP100

    TRANS NPN DARL 60V 8A TO220
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    DigiKey TIP100 Tube 1,100
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    Central Semiconductor Corp TIP100

    TRANS NPN DARL 60V 8A TO220-3
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    Rochester Electronics LLC TIP100

    TRANS NPN DARL 60V 8A TO220-3
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    DigiKey TIP100 Tube 634
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    TIP100 Tube 759
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    Flip Electronics TIP100G

    TRANS NPN DARL 60V 8A TO220
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    DigiKey TIP100G Tube 2,000
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    onsemi TIP100G

    TRANS NPN DARL 60V 8A TO220
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    Avnet Americas TIP100G Tube 0 Weeks, 2 Days 1,516
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    Quest Components TIP100G 19
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    TIP100G 15
    • 1 $1.0125
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    Flip Electronics TIP100G 3,750
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    TIP100 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIP100 Boca Semiconductor Power Darlingtons for Linear and Switching Applications Original PDF
    TIP100 Bourns NPN SILICON POWER DARLINGTONS Original PDF
    TIP100 Continental Device India PLASTIC POWER TRANSISTORS, Intended for use in Linear Switching Applications Original PDF
    TIP100 Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Original PDF
    TIP100 Fairchild Semiconductor NPN Epitaxial Silicon Darlington Transistor Original PDF
    TIP100 Fairchild Semiconductor NPN Epitaxial Silicon Darlington Transistor; Package: TO-220; No of Pins: 3; Container: Bulk Original PDF
    TIP100 Motorola Plastic Medium-Power Complementary Silicon Transistors Original PDF
    TIP100 On Semiconductor Plastic Medium-Power Complementary Silicon Transistors Original PDF
    TIP100 On Semiconductor Plastic Medium-Power Complementary Silicon Transistors Original PDF
    TIP100 Power Innovations NPN SILICON POWER DARLINGTONS Original PDF
    TIP100 Taitron Components Darlington Power Transistors (NPN) Original PDF
    TIP100 Transys Electronics PLASTIC POWER TRANSISTORS Original PDF
    TIP100 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    TIP100 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    TIP100 Central Semiconductor Darlington Bipolar Transistor: NPN: 60V@Tc=25C: TO-220: 3-Pin Scan PDF
    TIP100 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    TIP100 Continental Device India PLASTIC POWER TRANSISTORS Scan PDF
    TIP100 Fairchild Semiconductor SILICON DARLINGTON TRANSISTOR Scan PDF
    TIP100 General Electric 8A N-P-N darlington power transistor. 60V, 80W, gain of 1000 at 3A. Scan PDF
    TIP100 Mospec POWER TRANSISTORS(8A,60-100V,80W) Scan PDF

    TIP100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)


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    PDF TIP100, TIP101, TIP102 TIP105, TIP106 TIP107 O-220 TIP101 TIP100

    TIP100

    Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
    Text: TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)


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    PDF TIP105, TIP106, TIP107 TIP100, TIP101 TIP102 O-220 TIP106 TIP100 TIP102 TIP105 TIP106 TIP107

    Tip100

    Abstract: No abstract text available
    Text: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


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    PDF TIP100/101/102 TIP105/106/107 O-220 TIP100 TIP101 TIP102 Tip100

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP101 TIP102 NPN TIP105 TIP106 TIP107 PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC


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    PDF TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 O-220 TIP100/105 TIP102/107 TIP101/106

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components TIP100 TIP101 TIP102   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


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    PDF TIP100 TIP101 TIP102 O-220

    Untitled

    Abstract: No abstract text available
    Text: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original
    PDF TIP100/101/102 TIP105/106/107 O-220 TIP100 TIP101 TIP102

    TIP102G

    Abstract: TIP102 TIP101 TIP105G TIP106 TIP100 TIP100G TIP101G TIP105 TIP107
    Text: TIP100, TIP101, TIP102 NPN ; TIP105, TIP106, TIP107 (PNP) TIP101, TIP102, TIP106 and TIP107 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features


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    PDF TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 TIP102, TIP106 TIP107 TIP102G TIP102 TIP101 TIP105G TIP100 TIP100G TIP101G TIP105

    TIP100

    Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
    Text: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with TIP105, TIP106 and TIP107 TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature


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    PDF TIP100, TIP101, TIP102 TIP105, TIP106 TIP107 O-220 TIP100 TIP101 TIP100 TIP101 TIP102 TIP105 TIP107

    TRANSISTOR Tip101-Tip106

    Abstract: NPN bipolar junction transistors max hfe 2000 TIP100-D TIP106 TIP107 1N5825 MSD6100 TIP100 TIP101 TIP102
    Text: MOTOROLA Order this document by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN TIP100 TIP101* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


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    PDF TIP100/D TIP100 TIP101* TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 220AB TRANSISTOR Tip101-Tip106 NPN bipolar junction transistors max hfe 2000 TIP100-D TIP106 TIP107 1N5825 MSD6100 TIP100 TIP101 TIP102

    Untitled

    Abstract: No abstract text available
    Text: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)


    Original
    PDF TIP100, TIP101, TIP102 TIP105, TIP106 TIP107 O-220 TIP101 TIP100

    TIP105

    Abstract: TIP106 TIP107
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS


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    PDF TIP105/106/107 O-220C TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


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    PDF TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    TIP100

    Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 Boca Semicondcutor Corp. BSC TIP100, 101, 102


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    PDF O-220 TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107

    T1P102

    Abstract: No abstract text available
    Text: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107


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    PDF TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 2N6045 2N6388 TIP102' T1P102

    p107 to-220

    Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
    Text: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN


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    PDF TIP100 TIP105 TIP101 TIP106 TIP102 TIP107 tip100, tip105 tip101, tip106 p107 to-220 P102 P105 P107 TIP107

    TIP100

    Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


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    PDF TIP100/101 TIP105/106/107 O-220 TIP100 TIP101 TIP102 900MA TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    tip B 631 k

    Abstract: TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 TIP107 central
    Text: Datasheet Central TIP100 TIP101 TIPI02 NPN TIPI05 TIPI06 TIP107 PNP Semiconductor Corp. SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


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    PDF TIP100 TIP101 TIP107 T0-220AB TIP100, TIP105 TIP102 TIP105 tip B 631 k TIP106 TIP107 central

    TIP 102 transistor

    Abstract: transistor tip 107 Transistor tip 102
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


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    PDF TIP100/101/102 TIP105/106/107 TIP101 TIP 102 transistor transistor tip 107 Transistor tip 102

    D 1878 TRANSISTOR

    Abstract: No abstract text available
    Text: TtP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS CopyrlaW 0 1997, Power Innovations Llmltsd. UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 • D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102


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    PDF TtP105, TIP106, TIP107 TIP100, TIP101 TIP102 O-220 T1P105 TIP106 TIP105 D 1878 TRANSISTOR

    tip 102

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


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    PDF TIP100/101/102 O-220 TIP105/106/107 TIP101 tip 102

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102


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    PDF TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP107

    Untitled

    Abstract: No abstract text available
    Text: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit­


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    PDF TIP100/101/102 TIP105/106/107 TIP100, TIP101 TIP102 O-220 TIP105, TIP106 TIP107 100-T

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


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    PDF TIP100/101/102 TIP101 TIP102 TIP100

    tip 102

    Abstract: Transistor tip 102
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


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    PDF TIP100/101/102 TIP105/106/107 TIP101 TIP101 tip 102 Transistor tip 102