Traco Power TEL 3 series
Abstract: traco tme TML-40 traco power txl TES-2N DIP-24 TEN5WI ac to dc converters adjustable to 48 vdc TMLM TEL5
Text: DC / DC CONVERTERS A C/ DC POWER SUPPLIES www.tracopower.com Product Portfolio 2009 DC / DC CONVERTERS TES-1 Series TMA/TME Series TMR-3 Series DC/DC Converters 1 to 2 W in SMD-Package NEW • • • • • Models with Single- and Dual-Output High Efficiency, 80 % typ.
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CH-8002
ATEX94/9/EC
Traco Power TEL 3 series
traco tme
TML-40
traco power txl
TES-2N
DIP-24
TEN5WI
ac to dc converters adjustable to 48 vdc
TMLM
TEL5
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PSS-04-103
Abstract: saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB
Text: Saab Space AB Dokument ID Document ID Frisläppt datum Date Released Utgåva Issue Informationsklass Classification P-ASIC-NOT-00122-SE 2007-04-23 12 Company Restricted Sida Page 2 SUMMARY The SCTMTC ASIC User's Manual defines how the SCTMTC ASIC is to be used.
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P-ASIC-NOT-00122-SE
ESA/C/290,
PSS-04-103
saab space packet wire
TME 87
PSS-04-151
P-ASIC-NOT-00122-SE
PSS-04-106
K1784
TME 57
PSS-04-107
SAAB
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NCSL Z540.3
Abstract: E8363 N7832A E8356A E4436B network analyzer n3383a E6601A N7822A N7800A N4010A
Text: Agilent N7800A Calibration and Adjustment Software for Agilent RF/µW Instruments Agilent customers choosing to perform their own periodic maintenance performance verification and adjustments can now use the same automated software used in Agilent Service Centers.
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N7800A
14/minute
5989-6956EN
NCSL Z540.3
E8363
N7832A
E8356A
E4436B
network analyzer n3383a
E6601A
N7822A
N7800A
N4010A
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221A49
Abstract: MGP7N60E OP77
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination
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MGP7N60E/D
MGP7N60E
Oti21,
24W609
221A49
MGP7N60E
OP77
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saab space packet wire
Abstract: 7693A tme 126 AT7909E LA 7693 AT7909EKA-E CPDU MH1RT SMART ASIC 197 telemetry command protocol
Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses
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16-bit
256-pin
saab space packet wire
7693A
tme 126
AT7909E
LA 7693
AT7909EKA-E
CPDU
MH1RT
SMART ASIC 197
telemetry command protocol
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TME 87
Abstract: tme 126
Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses
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16-bit
256-pinerves
TME 87
tme 126
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N60E
Abstract: MGW21N60ED MGW21 TME 86 T247
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW21N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced
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MGW21N60ED/D
MGW21
N60ED
140W41
24H609
N60ED/D
N60E
MGW21N60ED
TME 86
T247
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Z311
Abstract: MGF7104
Text: MITSUBISHI D IS CR ET E SC blE ]> □ □ m cÎD2 TME • H I T S ^ Amitsubishi GaAs MMIC MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7100 Series are monolithic microwave integrated circuits for use in 900MHz band
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MGF7100
900MHz
200mA
Z311
MGF7104
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TME 87
Abstract: DESIGN OF TRAFFIC JAM DETECTION IN JAVA TME 87 I CONTENT16 traffic light controller java program TME 87 i 3 traffic light controller with aver TME 86
Text: monitor TRAFFICMONITOR - VIDEO IMAGE PR0CESS/WG SYSTEMS FOR REAL TIME TRAFFIC DATA COLLECTION TrafficMonitor-E Operating Manual Version 1.0 J O I N T - S T O C K C O M P A N Y RESEARCH CENTRE 2 Module and NeuroMatrix® are registered trademarks of Research Center MODULE.
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TME 57
Abstract: No abstract text available
Text: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs
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EDI8F16512C
S12Kx16
512Kx16bitCMOS
100ns
EDI8F16512LP)
512KX16
8192K
128Kx8
TME 57
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3XXXS
Abstract: jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 IDT70V9389L 017L
Text: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9389L Features: * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location
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IDT70V9389L
5/9/12ns
IDT70V9389L
500mW
PK128-1)
70V9389
1152K
18-Bit)
3XXXS
jsw marking
Typ41
marking code JSW
A15L
A15R
IDT70V9389
017L
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3XXXS
Abstract: Typ41 marking code JSW IDT70V9289 IDT70V9289L xsxx
Text: A . /s ilk |iB |B IB a F . 1 1 1 1 1 I W 0 WL HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9289L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location
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IDT70V9289L
5/9/12ns
IDT70V9289L
500mW
PK128-1)
70V9289
1024K
16-Bit)
3XXXS
Typ41
marking code JSW
IDT70V9289
xsxx
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K324
Abstract: 70A 1200V IGBTS
Text: Prelim inary Data Sheet OM120L60SB OMIOOF6OSB OM90L120SB OM70F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High C u r r e n t , Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 150 A m p I G B T s W ith F R E D D i o d e s FEATURES Includes Internal FRED Diode
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OM120L60SB
OM90L120SB
OM70F120SB
MIL-S-19500,
100F60SB
70F120SB
K324-375-!
K324
70A 1200V IGBTS
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tme 126
Abstract: No abstract text available
Text: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Preliminary - Rev. 0.0 Feb. 02, 1996 Description The HB56UW272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been
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HB56UW272E-7B/8B
152-Word
72-Bit
168-pin
HB56UW272E
16-Mbit
HM51W17805BTT)
16-bit
74LVT16244)
tme 126
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tme 126
Abstract: TME 87 I 24C026 s/ksmh12/2.27/30/24C0G
Text: HB56HW164DB-6B/7B 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Preliminary Rev 0.0 Apr. 18, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165BTT) sealed in TSOP package and 1
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HB56HW164DB-6B/7B
576-Word
64-Bit
HB56HW164DB
16-Mbit
HM51W16165BTT)
24C0G)
TheHB56HW164-DB
H356HW164DB
is144-pin
tme 126
TME 87 I
24C026
s/ksmh12/2.27/30/24C0G
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Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
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EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
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TME 87
Abstract: TME 87 0D
Text: ^EDI EDI8F3265C B*c1ronlc Dvtigm Inc." High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static R A M sinSO J packages on an epoxy
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EDI8F3265C
64Kx32
EDI8F3265C
64Kx32.
64Kx4
coEDI8F3265C25MZC
EDI8F3265C30MZC
EDI8F3265C35MZC
I8F3265C45MZC
TME 87
TME 87 0D
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tme 126
Abstract: 64128C CZ 121 connector tme+126
Text: ^ED I EDI8F64128C EL£CTCOn C d c s g n s . n e l 128Kx64 SRAM Module 128KX64 Static RAM Highspeed CMOS Cache Module Features 1MByte Secondary C ache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium B a se d System s
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EDI8F64128C
128Kx64
EDI8F64128C
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
160Lead
015B1USA
EDBF864120C
tme 126
64128C
CZ 121 connector
tme+126
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939 Processor Functional
Abstract: RT611 R924
Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.
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MC68030
M68000
939 Processor Functional
RT611
R924
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TME 57
Abstract: No abstract text available
Text: ^EDI EDI8F16512C ELECTRONIC D£SIGHS. NC , '512Kx16 SRAM Module 512Kx16 Static RAM CMOS, Module Features The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16 bit CMOS Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory
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EDI8F16512C
512Kx16
100ns
EDI8F16512LP
EDI8F16512C
8192K
128Kx8
EDI8F16512LP)
TME 57
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MC68030
Abstract: tme 126 M68000 MC68020 MC68851 939 Processor Functional
Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.
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MC68030
M68000
tme 126
MC68020
MC68851
939 Processor Functional
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2SC857
Abstract: 2SA536 2sc 865 RF transistor 2SC15-0 138B 2SA535
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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100nS
Te-25
2SC857
2SA536
2sc 865 RF transistor
2SC15-0
138B
2SA535
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TS8019
Abstract: PMC - NE 8 D TS-1529 PMC14 ts1030
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C e T e B b ie T p a H C $ o p M a T o p b i a h a M O H T a w a H a n a H e n b n e n a T H y ro m h m CeTeBue T paH c^opM aT op bi W M p o ro n n a T y n p M M e i-m ro T C fl b npo^eccM O H anbH O M
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06M0TKa
TS50/11
TS50/26
TS50/47
TS50/017
TS50/018
TS70/16
TS70/002
TS8019
PMC - NE 8 D
TS-1529
PMC14
ts1030
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TME 87
Abstract: TME 87 I 46/SMC 5/TME 87 I TME 87 i 3
Text: EDI8F3265C ^ E D L 64Kx32 SRAM Module ELECTRONIC 06SIGN& MC. 64Kx32 Static RAM CMOS, High Speed Module F e a tu r e s 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM Random Access Memory module organized as 64Kx32. This module is constructed
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EDI8F3265C
64Kx32
06SIGN&
EDI8F3265C
64Kx32.
64Kx4
ED0F3265C
TME 87
TME 87 I
46/SMC 5/TME 87 I
TME 87 i 3
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