LB1200
Abstract: T092 ZTX953 LB120
Text: PNP SILICON PLANAR MEDIUM POWER I HIGH CURRENT TRANSISTOR CorltinUOUs “ LJp to 10 Amps * Very * Excellent * Spice I ZTX953 1 ISSUE 4- JUNE 94 FEATIJRES + ~fj A~ps I ~ current /’ q peak current low saturation voltage gain up to 10 Amps moclel available
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ZTX953
LB1200
T092
ZTX953
LB120
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BTP955L3
Abstract: No abstract text available
Text: Spec. No. : C607L3 Issued Date : 2005.02.04 Revised Date : 2006.06.23 Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage
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C607L3
BTP955L3
OT-223
UL94V-0
BTP955L3
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Untitled
Abstract: No abstract text available
Text: Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage
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C607J3-A
BTP955J3
O-252
UL94V-0
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CYStech Electronics
Abstract: sot-223 code marking BTP953L3
Text: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage
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C657L3
BTP953L3
OT-223
UL94V-0
CYStech Electronics
sot-223 code marking
BTP953L3
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BTP955L3
Abstract: No abstract text available
Text: Spec. No. : C606L3 Issued Date : 2005.02.04 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage
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C606L3
BTP955L3
OT-223
UL94V-0
BTP955L3
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B1216
Abstract: No abstract text available
Text: Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTB1216J3 BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Features • 4 Amps continuous current, up to 10 Amps peak current
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C811J3
BTB1216J3
-140V
O-252
UL94V-0
B1216
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FZT857
Abstract: FZT957 FZT958 DSA003675
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp
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OT223
FZT957
FZT958
FZT957
FZT857
FZT958
-100mA,
50MHz
FZT857
DSA003675
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A1KA
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp
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OT223
FZT957
FZT958
FZT957
FZT857
FZT958
100ms
A1KA
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NSL12AW
Abstract: NSL12AWT1 NSL12AWT1G
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)
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NSL12AW
NSL12AW/D
NSL12AW
NSL12AWT1
NSL12AWT1G
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Untitled
Abstract: No abstract text available
Text: CZT32C SOT-223 Transistor PNP SOT-223 1. BASE 2. COLLECTOR 1 3. EMITTER Features Complementary to CZT31C Power amplifier applications up to 3.0 amps. Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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CZT32C
OT-223
OT-223
CZT31C
-375mA
-500mA
-30mA
-100V
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FZT958
Abstract: FZT857 FZT957 DSA003719
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT I ISSUE 3- JANUARY I 1996 FEATURES * FZT957 FZT958 I HIGH PERFORMANCE TRANSISTORS r 1 Amp continuous * Up to 2 Amps * Very * Excelient current c peak current low saturation voltage gain characteristics specified up to 1 Amp
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OT223
FZT957
FZT958
FZT857
FZT958
FZT857
FZT957
DSA003719
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FCX688B
Abstract: FCX789A DSA003688
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX789A ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 8A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Low Saturation Voltage E.g. 10mv Typ. Complimentary Type Partmarking Detail -
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FCX789A
FCX688B
100ms
100us
FCX688B
FCX789A
DSA003688
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CZT31C
Abstract: CZT32C sot223 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT32C SOT-223 TRANSISTOR PNP FEATURES 1 z Complementary to CZT31C z Power amplifier applications up to 3.0 amps. 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-223
CZT32C
OT-223
CZT31C
-30mA
-100V
-375mA
-500mA
CZT31C
CZT32C
sot223 transistor
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX789A ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 8A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Low Saturation Voltage E.g. 10mv Typ. Complimentary Type Partmarking Detail -
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FCX789A
FCX688B
100ms
100us
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ISSUE 3 JUNE 94 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteritics up to 1 Amp * Spice model available C B E E-Line
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ZTX957
100ms
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Untitled
Abstract: No abstract text available
Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80
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2N6050
2N6051
2N6052
2N6057
2N6058
2N6059
2N6282
2N6283
2N6284
2N6285
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FCX1047A
Abstract: FCX1147A DSA003683
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;
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FCX1147A
FCX1047A
Dissipati100
100ms
FCX1047A
FCX1147A
DSA003683
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transistor A7a
Abstract: 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6212A
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 sus VOLTS Ic (max) AMPS 1*FE@ I c / V ce DEVICE TYPE 2N3740A 60 1 [email protected]/l 2N3740A 60 1 2N3741A 80 2N3741A ^CEO PACKAGE PNP TO-66 VcE(s»t) pr D* WATTS (MHz) .6@1/.125 25 4 [email protected]/l .6@1/.125
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2N3740A
2N3741A
2N4898
2N4899
2N4900
2N5954
2N5955
2N5956
transistor A7a
2N6212A
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2N5415
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >[email protected]/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) [email protected]/.25
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O-39/TO-5
2N3867
2N3868
2N4930
2N4931
2N5094
2N5149
2N5153
2N5415
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Transistor 2N5093
Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >[email protected]/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)
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O-39/TO-5
2N3867A
2N3868A
2N5091
2N5093
2N5094
2N5096
2N5149
2N5151
2N5153
Transistor 2N5093
7 amps pnp transistor
2N5416A
"PNP Transistor"
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741 IC
Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >[email protected]/3 [email protected]/.25 6 60 2N3868 60 3 >[email protected]/3 [email protected]/.25 6 60 2N4930 200 .05 [email protected]/10 [email protected]/.001 5 10* 2N4931 250 .05
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O-39/TO-5
2N3867
2N3868
2N4930
2N4931
2N5091
2N5093
2N5094
2N5096
2N5149
741 IC
741i
IC 741 to
2N5415
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 [email protected]/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 [email protected]/l .6@1/.125
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2N3740A
2N3741A
2N4898
2N4899
2N4900
2N5954
2N5955
2N5956
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2N5581A
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 [email protected]/5 2N2605 45 0.03 [email protected]/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B
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2N2604
2N2605
2N2944AA
2N2945
2N2945AA
2N2946
2N2946AA
2N3485
2N3485AA
2N3486
2N5581A
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transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3
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2N6050
O-204AA
2N6051
2N6052
2N6285
2N6286
2N6287
O-254AA
2N7371
T0-204AA
transistor 206
2N7370
AN-750
2N6057
2N6058
2N6059
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