smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain
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des691
10F-A,
smps 1000W
600V 300A igbt dc to dc boost converter
SP6-P
DRF1400
smps 500w half bridge
DRF1300
1000w inverter MOSFET
1000W solar power inverter
APT30GT60BRG
3000w inverter mosfet circuit
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SIL-PAD density
Abstract: ASTM-A228 A228
Text: Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest surface area and smallest footprint. It is the ideal type
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O-247
O-264
6063T5
MV-102-55E
MA-102-55E
1-866-9-OHMITE
SIL-PAD density
ASTM-A228
A228
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300V dc dc boost converter
Abstract: 300V dc to dc boost converter PLUS-247 Uninterruptible power supply application sot-227 footprint TO264 footprint ZVS boost converter "Power MOSFETs" IXFK230N20T ups circuit
Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F GigaMOSTM Power MOSFETs “Best in class” energy efficiency for lower–voltage higher–current applications MAY 2009 OVERVIEW IXYS introduces a new product family of 170V to 300V GigaMOSTM Power MOSFETs. These
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OT-227
PBGIGAMOS170300MOSFET
300V dc dc boost converter
300V dc to dc boost converter
PLUS-247
Uninterruptible power supply application
sot-227 footprint
TO264 footprint
ZVS boost converter
"Power MOSFETs"
IXFK230N20T
ups circuit
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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SIL-PAD to-247
Abstract: ASTM-A228 SIL-PAD 1000 TO 247 SIL-PAD density Tgon 800 A228 A366 MV102
Text: Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest surface area and smallest footprint. It is the ideal type
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O-247
O-264
6063T5
MV-102-55E
MA-102-55E
1-866-9-OHMITE
SIL-PAD to-247
ASTM-A228
SIL-PAD 1000 TO 247
SIL-PAD density
Tgon 800
A228
A366
MV102
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VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
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MS5-001-14
VRF2933FL
VRF164FL
ARF463AP1
Non - Isolated Buck, application
DRF1301
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Full-Bridge topology switching power supply
Abstract: hybrid car charger inverter sot-227 footprint dc link capacitor EV Battery IXFN520N075T2 ups circuit power mosfet for ev battery charger dc to dc full-bridge mosfet for dc to ac inverter
Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F GigaMOSTM TrenchT2TM Power MOSFETs Power MOSFET Solutions for low voltage, high current power conversion systems january 2010 OVERVIEW IXYS announces the portfolio expansion of its GigaMOSTM product family with new
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52N30
Abstract: IXFH 52N30q 52N30Q TO264 footprint
Text: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions
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52N30Q
52N30
IXFH 52N30q
52N30Q
TO264 footprint
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V ID25 = 16 A RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings
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16N90Q
16N90Q
O-247
O-268
O-264
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions
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52N30Q
52N30Q
O-268AA
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80n15
Abstract: TO264 footprint
Text: HiPerFETTM Power MOSFETs IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 = 150 V = 80 A = 22.5 mW £ 200 ns RDS on trr Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS
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O-247
O-264
O-268
80N15Q
80N15Q
O-268AA
80n15
TO264 footprint
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80N20Q
Abstract: TO264 footprint
Text: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR
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80N20Q
80N20Q
O-247
O-268AA
TO264 footprint
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DSA003681
Abstract: TO264 footprint
Text: HiPerFETTM Power MOSFETs IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 = 150 V = 80 A = 22.5 mW £ 200 ns RDS on trr Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS
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O-247
O-264
O-268
80N15Q
80N15Q
O-268AA
DSA003681
TO264 footprint
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60N25
Abstract: MAX2235
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class VDSS ID25 = 250 V = 60 A = 47 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol
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O-247
O-264
O-268
60N25Q
60N25Q
O-268AA
60N25
MAX2235
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ixfh 26 n 49
Abstract: IRM80
Text: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR
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80N20Q
ixfh 26 n 49
IRM80
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15n10
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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15N100Q
15N100Q
O-247
O-268
O-268AA
15n10
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APT5010LVR
Abstract: TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus
Text: APPLICATION NOTE By: APT9902 Denis Grafham CUTTING-EDGE MOUNT DOWN METHODS BOOST POWER SEMICONDUCTOR PERFORMANCE 1 APT9902 Cutting-Edge Mount Down Methods Boost Power Semiconductor Performance and Cut System Costs Denis Grafham, European Applications Advanced Power Technology
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APT9902
B-1330
O-264
APT5010LVR
TO264 footprint
APT5010B2VR
072K
barco
APT9902
094k
SIL-PAD to-247
Orcus
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60N25
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class VDSS ID25 = 250 V = 60 A = 47 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol
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60N25Q
60N25
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26n60q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V
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26N60Q
26N60Q
O-247
O-268
O-268AA
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TO264 footprint
Abstract: 16N90Q
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings
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16N90Q
TO264 footprint
16N90Q
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IXFH20N80Q
Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS
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IXFH20N80Q
IXFK20N80Q
IXFT20N80Q
O-247
IXFT20N80
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26N60Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V
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26N60Q
26N60Q
O-247
O-268
O-268AA
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as
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sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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