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    SOURIAU-SUNBANK UTP02028S

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    SOURIAU-SUNBANK UTP02020P

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    SOURIAU-SUNBANK UTP02028PH

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    SOURIAU-SUNBANK UTP02028SH

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    SOURIAU-SUNBANK UTP02020PH

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    TP0202 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP0202 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    TP0202K Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    TP0202K-T1 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    TP0202K-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 385MA SOT23-3 Original PDF
    TP0202K-T1-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    TP0202K-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 385MA SOT23-3 Original PDF
    TP0202N2 Unknown FET Data Book Scan PDF
    TP0202N3 Unknown FET Data Book Scan PDF
    TP0202ND Unknown FET Data Book Scan PDF
    TP0202T Temic Semiconductors P-Channel Enhancement-Mode MOS Transistor Original PDF
    TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF

    TP0202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP0202K

    Abstract: TP0202K-T1-E3 marking code vishay SILICONIX sot-23
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3


    Original
    PDF TP0202K O-236 OT-23) TP0202K-T1-E3 11-Mar-11 TP0202K TP0202K-T1-E3 marking code vishay SILICONIX sot-23

    AN804

    Abstract: TP0202T marking code vishay SILICONIX vishay siliconix code marking
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D


    Original
    PDF TP0202T 18-Jul-08 AN804 TP0202T marking code vishay SILICONIX vishay siliconix code marking

    TP0202T

    Abstract: AN804
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D


    Original
    PDF TP0202T 08-Apr-05 TP0202T AN804

    AN804

    Abstract: TP0202T
    Text: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features


    Original
    PDF TP0202T AN804. 44505--Rev AN804 TP0202T

    AN804

    Abstract: TP0202T
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D


    Original
    PDF TP0202T O-200 S-04279--Rev. 16-Jul-01 AN804 TP0202T

    Untitled

    Abstract: No abstract text available
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3


    Original
    PDF TP0202K O-236 OT-23) TP0202electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    marking code vishay SILICONIX

    Abstract: No abstract text available
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3


    Original
    PDF TP0202K O-236 OT-23) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code vishay SILICONIX

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D


    Original
    PDF TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D


    Original
    PDF TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T

    TA 7061

    Abstract: TP0202T S4450
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D


    Original
    PDF TP0202T O-236 S-44505--Rev. 06-Sep-94 TA 7061 TP0202T S4450

    Untitled

    Abstract: No abstract text available
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3


    Original
    PDF TP0202K O-236 OT-23) TP0202electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    TP0202T

    Abstract: TP0202K 73206 TP0202K-T1-E3 TP0202T-T1 TP0202T-T1-E3
    Text: Specification Comparison Vishay Siliconix TP0202K vs. TP0202T Description: P-Channel MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: TP0202K Replaces TP0202T TP0202K-T1-E3 Lead (Pb -free Version) Replaces TP0202T-T1-E3 (Lead (Pb)-free Version)


    Original
    PDF TP0202K TP0202T OT-23 TP0202K-T1-E3 TP0202T-T1-E3 TP0202K 10-Nov-06 TP0202T 73206 TP0202K-T1-E3 TP0202T-T1 TP0202T-T1-E3

    TP0202K

    Abstract: TP0202K-T1
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −30 30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = −10 V −1.3 to −3.0 −385 3.5 @ VGS = −4.5 V −1.3 to −3.0 −240 FEATURES D D D D D D Qg (Typ) 1000 BENEFITS


    Original
    PDF TP0202K 08-Apr-05 TP0202K TP0202K-T1

    marking code vishay SILICONIX sot-23

    Abstract: TP0202K
    Text: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) –30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = –10 V –1.3 to –3.0 –385 3.5 @ VGS = –4.5 V –1.3 to –3.0 –240 FEATURES BENEFITS APPLICATIONS


    Original
    PDF TP0202K S-04279--Rev. 16-Jul-01 marking code vishay SILICONIX sot-23 TP0202K

    TP0202K

    Abstract: TP0202K-T1 marking code vishay SILICONIX
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −30 30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = −10 V −1.3 to −3.0 −385 3.5 @ VGS = −4.5 V −1.3 to −3.0 −240 FEATURES D D D D D D Qg (Typ) 1000 BENEFITS


    Original
    PDF TP0202K S-41777--Rev. 04-Oct-04 TP0202K TP0202K-T1 marking code vishay SILICONIX

    TP0202K

    Abstract: TP0202K-T1-E3
    Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3


    Original
    PDF TP0202K O-236 OT-23) TP0202K-T1-E3 18-Jul-08 TP0202K TP0202K-T1-E3

    TP0202K

    Abstract: No abstract text available
    Text: SPICE Device Model TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF TP0202K 18-Jul-08 TP0202K

    AN609

    Abstract: TP0202K
    Text: TP0202K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF TP0202K AN609 04-Jan-08

    marking code K2

    Abstract: No abstract text available
    Text: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) –30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = –10 V –1.3 to –3.0 –385 3.5 @ VGS = –4.5 V –1.3 to –3.0 –240 FEATURES BENEFITS APPLICATIONS


    Original
    PDF TP0202K S-03630--Rev. 07-May-01 marking code K2

    Untitled

    Abstract: No abstract text available
    Text: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET -3 0 * iK > ’ PRODUCT SUMMARY V (B R )D S S ( m ln ) (V ) < r D S (o n ) (f ì ) VGS(th)(V) lD (mA) 1.4 @ V q s = - 1 0 V -1 .3 t o -3 .0 -3 8 5 3.5 @ V G s = - 4 - 5 V -1 .3 t o -3 .0 -2 4 0


    OCR Scan
    PDF TP0202K 16-Jul-01 S-04279--

    TP0204

    Abstract: TP0204N2 TP0204N3
    Text: 01 SUPERTEX INC DE | ô 7 7 3 E T S ODOlSSb T | ~ P-Channel Enhancement-Mode Vertical D M O S Power FETs Ordering Information Order Number / Package TO-39 TO-92 BVdss I ^DS ON b v dos (max) (min) -20 V 2.0Q -2.0A TP0202N2 TP0202N3 -40V 2 .on -2.0A TP0204N2


    OCR Scan
    PDF TP0202N2 TP0204N2 TP0202N3 TP0204N3 TP0204 TP0204N3

    TP0202T

    Abstract: Oj26
    Text: TP0202T T e MIC Se mi c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) Max ( Q ) V GS U h )(V ) I d (A) 1 .4 @ V g s = - 1 0 V -1 .3 to - 3 V -0.41 3.5 @ V Gs = ”4-5 V - 1 .3 1 0 - 3 V -0 .2 7 ro s(o n ) -2 0


    OCR Scan
    PDF TP0202T Moto10 S-52426-- 14-Apr-97 TP0202T Oj26

    TN0624N2

    Abstract: TN0620ND TN0624N3 TN0624N5 TN0624ND TP0102N2 TP0102N3 TP0102ND TP0104N2 TP0204N3
    Text: - f JR * £ ÍS Ta=25°C t Vd s Vgs s « tt « i Vd g * (V) SUPERTEX SUPERTEX N TN0624N3 TN0624N5 TN0624ND SUPERTEX SUPERTEX SUPERTEX N TN1110ND TP0102N2 TP0102N3 SUPERTEX SUPERTEX SUPERTEX N TP01D2ND TP0104N2 TPÛ104N3 TP0104ND TPÛ202N2 TP0202N3 TP02Ü2ND


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    PDF TN0620ND TN0624N2 TN0624N3 TN0624N5 TP0604ND TP0616N3 TP0616N5 O-220 TP0616ND TP0620N2 TN0624ND TP0102N2 TP0102N3 TP0102ND TP0104N2 TP0204N3

    TP0202

    Abstract: No abstract text available
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M în (V) V G S 0 h )(V ) b (A) V -1 .3 t o - 3 V -0.41 3.5 @ V g s = - 4-5 V -1 .3 to - 3 V -0 .2 7 r D S (o n ) 1.4 -2 0 Max (Q) @ Vq s =-1 0 FEATURES BENEFITS APPLICATIONS •


    OCR Scan
    PDF TP0202T O-236 OT-23) S-04279-- 16-Jul-01 TP0202