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    TP25 Search Results

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    LMV1012TP-25/NOPB Texas Instruments Analog Pre-Amplified IC for High Gain Microphones 4-DSBGA Visit Texas Instruments Buy
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    TP25 Price and Stock

    Microchip Technology Inc TP2540N8-G

    MOSFET P-CH 400V 125MA TO243AA
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    DigiKey TP2540N8-G Reel 46,000 2,000
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    Mouser Electronics TP2540N8-G 5,411
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    Verical TP2540N8-G 7,830 6
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    TP2540N8-G 7,000 500
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    TP2540N8-G 1,917 22
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    TP2540N8-G 628 47
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    Arrow Electronics TP2540N8-G Cut Strips 7,830 4 Weeks 1
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    TP2540N8-G 2,000 4 Weeks 2,000
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    Newark TP2540N8-G Cut Tape 1,072 1
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    Microchip Technology Inc TP2540N8-G Reel 1,950 7 Weeks
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    Chip-Germany GmbH TP2540N8-G 49
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    Chip1Stop TP2540N8-G Cut Tape 2,483
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    EBV Elektronik TP2540N8-G 8 Weeks 2,000
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    KOA Speer Electronics Inc RK73H1ETTP2551F

    RES 2.55K OHM 1% 1/10W 0402
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    DigiKey RK73H1ETTP2551F Digi-Reel 23,333 1
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    RK73H1ETTP2551F Cut Tape 23,333 1
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    RK73H1ETTP2551F Reel 20,000 10,000
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    Velocity Electronics RK73H1ETTP2551F 18,749
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    Component Electronics, Inc RK73H1ETTP2551F 9,800
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    Microchip Technology Inc TP2510N8-G

    MOSFET P-CH 100V 480MA TO243AA
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    DigiKey TP2510N8-G Reel 12,000 2,000
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    Mouser Electronics TP2510N8-G 4,100
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    Verical TP2510N8-G 16,000 2,000
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    TP2510N8-G 13,500 500
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    TP2510N8-G 1,340 59
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    TP2510N8-G 945 8
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    Arrow Electronics TP2510N8-G 16,000 7 Weeks 2,000
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    TP2510N8-G 4,000 7 Weeks 2,000
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    TP2510N8-G Cut Strips 945 7 Weeks 1
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    Newark TP2510N8-G Cut Tape 1,985 1
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    Microchip Technology Inc TP2510N8-G Reel 7 Weeks
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    Avnet Silica TP2510N8-G 6,000 9 Weeks 2,000
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    Master Electronics TP2510N8-G 13,500
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    KOA Speer Electronics Inc RN73H1ETTP2551B10

    RES 2.55K OHM 0.1% 1/16W 0402
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    DigiKey RN73H1ETTP2551B10 Digi-Reel 6,315 1
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    RN73H1ETTP2551B10 Cut Tape 6,315 1
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    Diodes Incorporated ZXTP25012EFHTA

    TRANS PNP 12V 4A SOT23-3
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    DigiKey ZXTP25012EFHTA Reel 6,000 3,000
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    Newark ZXTP25012EFHTA Cut Tape 2,887 1
    • 1 $0.603
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    Avnet Silica ZXTP25012EFHTA 3,000 28 Weeks 3,000
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    New Advantage Corporation ZXTP25012EFHTA 3,000 1
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    TP25 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP250 Total Power International 1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS Scan PDF
    TP2502 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2502 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2502N8 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2502N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 0.63A SOT89-3 Original PDF
    TP2502ND Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2502ND Supertex P-Channel Enhacement Mode Vertical DMOS FETs Scan PDF
    TP2503 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TP2503 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TP2504N8 Supertex P-Channel Enhacement Mode Vertical DMOS FETs Scan PDF
    TP2504ND Supertex P-Channel Enhacement Mode Vertical DMOS FETs Scan PDF
    TP251 Unknown Cross Reference Datasheet Scan PDF
    TP251 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TP251 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TP251 Total Power International Single and Dual Output DC/DC Converters Scan PDF
    TP2510 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2510 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2510N8 Supertex SEMICONDUCTOR DEVICE, TRANSISTOR, P-CHANNEL MOSFET SOT-89 Original PDF
    TP2510N8 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2510N8-G Supertex Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Original PDF

    TP25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP2535

    Abstract: No abstract text available
    Text: TP2535 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2535 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TP2535 TP2535 A020309

    TP2522

    Abstract: No abstract text available
    Text: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TP2522 TP2522 A020309

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF DSFP-TP2522 B091408

    b0914

    Abstract: No abstract text available
    Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    PDF TP2510 125pF DSFP-TP2510 B091408 b0914

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707

    Untitled

    Abstract: No abstract text available
    Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2540 125pF TP2540 O-243AA OT-89) O-243, DSFP-TP2540 A122707

    TA 7139

    Abstract: TA 7139 P
    Text: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    PDF TP2520 TP2522 -200V -220V OT-89. O-243AA* TP2520N8 TP2522N8 TP2522ND 200pF TA 7139 TA 7139 P

    TP25

    Abstract: Tactile Switches TP25
    Text: Tactile Switches TP25 Series 3.8x6 mm SMT Tactile Switch P.C.B. LAYOUT TP25. Flat Terminals P.C.B. LAYOUT TP25L. Bending Terminals SPECIFICATIONS: MATERIALS: > Rating: > Contact Resistance: > Insulation Resistance: > Dielectric Strength: > Electrical Life:


    Original
    PDF TP25L. 24VDC 300VAC 200gf 300gf) 450gf) 200gf) 110gf TP25 Tactile Switches TP25

    Untitled

    Abstract: No abstract text available
    Text: TP251 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original
    PDF TP251

    Untitled

    Abstract: No abstract text available
    Text: TP2502N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)370m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)550m Minimum Operating Temp (øC)-55


    Original
    PDF TP2502N8 Junc-Case227

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original
    PDF TP2535 125pF DSFP-TP2535 A052109

    TP2522ND

    Abstract: TP2522 TP2522N8-G
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF DSFP-TP2522 B022309 TP2522ND TP2522 TP2522N8-G

    Untitled

    Abstract: No abstract text available
    Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2540 125pF DSFP-TP2540 A052109

    TP5A

    Abstract: TP2510 TP2510N8 TP2510ND
    Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    PDF TP2510 O-243AA* -100V TP2510N8 TP2510ND OT-89. O-243AA 125pF TP5A TP2510 TP2510N8 TP2510ND

    Untitled

    Abstract: No abstract text available
    Text: TP2535 TP2540 £jUlt — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* DICE+ -350V 25Q -2.4V -0.4A TP2535N3TP2535ND -400V 25Q -2.4V -0.4A


    OCR Scan
    PDF TP2535 TP2540 TP2535N3 TP2540N3 O-243AA* TP2540N8 TP2535ND TP2540ND -350V -400V

    Untitled

    Abstract: No abstract text available
    Text: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512


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    PDF TP2506 O-243AA* TP2510N8 TP2506ND TP2510ND /TP25'

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc. TP2502 TP2504 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^D S O N ^G S(th) *D(ON) BV jjgs (max) (max) (min) -20V 2.0C1 -2.4V -40V 2.0£2 -2.4V Order Number / Package TO-243AA* DICE*


    OCR Scan
    PDF TP2502 TP2504 O-243AA* TP2504N8 TP2502ND TP2504ND TP2502/TP2504

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan
    PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    Untitled

    Abstract: No abstract text available
    Text: 0 Supertex inc. TP25D Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * t Order Number / Package b v dss / ^D S ON ^G S(th) I d (ON) BV dgs (max) (max) (min) TO-92 TO-243AA* DICEt -350V 25Q -2.4V -0.4A TP2535N3


    OCR Scan
    PDF TP25D TP2535N3 TP2540N3 O-243AA* TP2540N8 TP2535ND TP2540ND -350V -400V OT-89,

    Untitled

    Abstract: No abstract text available
    Text: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A


    OCR Scan
    PDF -100V O-243AA* TP2506ND TP2510ND TP2S10N8 OT-89. TP25A

    Untitled

    Abstract: No abstract text available
    Text: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)


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    PDF TP2516 TP2520 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V TP2516/TP2520

    Untitled

    Abstract: No abstract text available
    Text: TP2502 LowThreshold Supertex inc. Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -20V 2.0Q. -2.4V -2.0 A TP2502N8 TP2502ND * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.


    OCR Scan
    PDF TP2502 O-243AA* TP2502N8 TP2502ND 125pF

    TP2511

    Abstract: No abstract text available
    Text: 12E D I b B t i ? 25 M MOTOROLA MOTOROLA SC QGÔÔ24E XSTRS/R *ì | F 1-33-H SEMICONDUCTOR TECHNICAL DATA TP2511 Advance Inform ation The RF Line UHF P o w e r T ran sisto r l o w — 470 M H z UHF POWER TRANSISTOR The TP2511 is designed for 12.5 V UHF amplifiers. Its construction which incorporates


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    PDF 1-33-H TP2511 TP2511

    br A 708

    Abstract: No abstract text available
    Text: I 1EE D MOTOROLA b3b?2S4 0000240 MO T O R C L A SC S E M IC O N D U C T O R I S r-33-£>7 XSTRS/R F TECHNICAL DATA TP2505 TP2505S A dvance Inform ation The RF Line UHF Power Transistors 5 W — 470 M H z UHF PO W ER T R A N S IS T O R S The TP2505/S are designed for 12.5 V U H F amplifiers. Their construction which incor­


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    PDF r-33-£ TP2505 TP2505S TP2505/S br A 708