IRG4BC15MD
Abstract: DSA0031036
Text: PD- 94151A IRG4BC15MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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4151A
IRG4BC15MD
10kHz
O-220AB
10kHz)
O-220AB
IRG4BC15MD
DSA0031036
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Untitled
Abstract: No abstract text available
Text: PD - 94151 PROVISIONAL IRG4BC15MD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast IGBT C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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IRG4BC15MD
10kHz
O-220AB
10kHz)
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 94151A IRG4BC15MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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Original
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4151A
IRG4BC15MD
10kHz
O-220AB
10kHz)
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95612 IRG4BC15MDPbF Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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IRG4BC15MDPbF
10kHz
O-220AB
10kHz)
applic789
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GE 86A
Abstract: No abstract text available
Text: PD- 95612 IRG4BC15MDPbF Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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Original
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IRG4BC15MDPbF
10kHz
O-220AB
10kHz)
GE 86A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95612 IRG4BC15MDPbF Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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Original
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IRG4BC15MDPbF
10kHz
O-220AB
10kHz)
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PDF
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IRG4BC15MD
Abstract: 94151A
Text: PD- 94151A IRG4BC15MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel
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Original
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4151A
IRG4BC15MD
10kHz
O-220AB
10kHz)
O-220AB
IRG4BC15MD
94151A
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PDF
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mc34063 solar charger
Abstract: 500MHz Frequency Counter Using MECL MC34063 Boost MOSFET Motorola AN220 FETs in Chopper and Analog 12v to 1000v inverters circuit diagrams MC1466 mc34063 step up with mosfet eb407 motorola AN485 MC34063 step down application notes
Text: SCG Application Notes Guide Application Notes, Article Reprints, Engineering Bulletins BR1522/D Rev. 0, 5/1999 Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation
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BR1522/D
mc34063 solar charger
500MHz Frequency Counter Using MECL
MC34063 Boost MOSFET
Motorola AN220 FETs in Chopper and Analog
12v to 1000v inverters circuit diagrams
MC1466
mc34063 step up with mosfet
eb407
motorola AN485
MC34063 step down application notes
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PDF
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mc34063 step down with mosfet
Abstract: abstract of battery charging circuit using scr 1000w class d circuit diagram schematics mc34063 h-bridge igbt pwm schematics circuit MC1466 MC34063 Boost MOSFET 500MHz Frequency Counter Using MECL 10 amp 12 volt solar charger circuits mc34063 solar charger h-bridge igbt pwm schematics circuit
Text: BR1522/D Rev. 1, Oct-1999 Application Notes, Article Reprints and Engineering Bulletins ON Semiconductor Formerly a Division of Motorola Reference Materials Selector Guide Application Notes, Article Reprints and Engineering Bulletins Reference Materials Selector Guide
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Original
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BR1522/D
Oct-1999
r14153
mc34063 step down with mosfet
abstract of battery charging circuit using scr
1000w class d circuit diagram schematics
mc34063 h-bridge igbt pwm schematics circuit
MC1466
MC34063 Boost MOSFET
500MHz Frequency Counter Using MECL
10 amp 12 volt solar charger circuits
mc34063 solar charger
h-bridge igbt pwm schematics circuit
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PDF
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SPICE model for UC3844
Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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Original
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BR1522/D
Aug-2000
r14525
BR1522/D
SPICE model for UC3844
UC3843 spice model
tl494 spice model
EB407 Basic Halogen Converter
MTP2N10
180V - 240V igbt dimmer
UC3845 pspice model
mosfet cross reference
spice model moc3061
uc3843 flyback supply opto-coupler
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PDF
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Untitled
Abstract: No abstract text available
Text: INSTALLATION AND OPERATING INSTRUCTIONS MODEL SIVF KB Part No. 9474 – Signal Isolator for KBVF Controls See Page 1 Pending See Safety Warning on Page 1 The information contained in this manual is intended to be accurate. However, the manufacturer retains the
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A40264)
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Untitled
Abstract: No abstract text available
Text: Current Sensing Relay The CR4395 Series, Current Sensing Relay provides an effective and highly stable method for monitoring electrical current. The current-carrying wire is routed through the opening extending from the top of the case. When current reaches the level set
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CR4395
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Untitled
Abstract: No abstract text available
Text: Ground Fault Sensor The CR7310 Series, Ground Fault Sensor provides a reliable and cost effective method for sensing ground faults. The current-carrying wires are routed through the opening extending from the top of the case. When ground current reaches the
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CR7310
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Untitled
Abstract: No abstract text available
Text: Current Sensing Relay The CR4395 Series, Current Sensing Relay provides an effective and highly stable method for monitoring electrical current. The current-carrying wire is routed through the opening extending from the top of the case. When current reaches the level set
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CR4395
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A1534A
Abstract: 1534a 2SC3940 A1534
Text: Panasonic Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification U nit: mm C om ple m e ntary to 2 S A 1 534 and 2S A 1534A • Features • Low collector to emitter saturation voltage VCE -sat .
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OCR Scan
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2SC3940,
2SC3940A
2SC3940
2SC3940A
A1534A
1534a
A1534
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SC4391 Silicon NPN epitaxial planer type For low -frequency output am plification Unit: mm C om ple m e ntary to 2 S A 1 674 • Features • Low collector to emitter saturation voltage V c E s a t • High collector to emitter voltage Vceo.
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OCR Scan
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2SC4391
2SA1674
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SC4606 Silicon NPN epitaxial planer type For low -frequency d river am plification C om ple m e ntary to 2 S A 1 762 • Features • High collector to emitter voltage Vceo. • Optimum for the driver stage of a low-frequency and 25 to 30W
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OCR Scan
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2SC4606
2SA1762
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PDF
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3N187
Abstract: N02 Transistor rf 3n187 MOSFET 3n187 RCA RCA-3N187 200 pF air variable capacitor air capacitor VAM-010 V62s rca transistor 7-000
Text: MOS F IE L D -E F F E C T D EVIC ES 3N187 Silicon Dual Insulated-Gate F ie ld -E ffe ct Transistor N-Channel Depletion Type D evice Features • Back-to-back diodes protect each gate against handling and in-circuit transients • High forward transconductance - gfS = 12,000 pmho typ.
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OCR Scan
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3N187
RCA-3N187
92CS-I4787A2
N02 Transistor rf
3n187 MOSFET
3n187 RCA
200 pF air variable capacitor
air capacitor
VAM-010
V62s
rca transistor 7-000
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PDF
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hp 3101 pin
Abstract: hp 3101 CSD362
Text: CSD362 CSD362 NPN PLASTIC POWER TRANSISTOR B /W TV Horizontal Deflection Output L s DIM A 8 C D E F G H J K L M N MIN MAX 14.42 9,63 3.56 16.51 10.67 4.83 0,90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0 ,56 12.70 14.73 6.35 2.03 2.92 31.24 7 DEG ABSOLUTE MAXIMUM RATINGS
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CSD362
CSD362
hp 3101 pin
hp 3101
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PDF
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2SC4208
Abstract: No abstract text available
Text: Panasonic Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit: mm C om ple m e ntary to 2 S A 1 619 and 2 S A 1 6 1 9A • Features • Low collector to emitter saturation voltage V c E s a t • Output of 1W is obtained with a com plem entary pair with
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2SC4208,
2SC4208A
2SA1619
2SA1619A.
2SC4208
2SC4208A
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PDF
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MOTOROLA brushless dc controller schematic
Abstract: junctions mosfet schematic dc motor driver motorola AN897 MOTOROLA brushless dc controller MDC1000 MOSFET 1hp MC33033 DL135 mc33035
Text: AR341 POWER MOSFET, 1HP BRUSHLESS DC MOTOR DRIVE WITHSTANDS COMMUTATION STRESSES Prepared by Ken Berringer Motorola, Inc. Phoenix, Arizona Reprinted with permission from PowerConversion & Intelligent Motion, June 1990 issue. 1990 Intertec Communications Inc. All Rights Reserved.
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AR341
26128C-1
MOTOROLA brushless dc controller schematic
junctions
mosfet schematic dc motor driver
motorola AN897
MOTOROLA brushless dc controller
MDC1000
MOSFET 1hp
MC33033
DL135
mc33035
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PDF
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transistor 1Bp
Abstract: bc847 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor bc846 BC646B bc847c
Text: Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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OCR Scan
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BC846;
BC847;
BC848
BC856;
BC857;
BC858.
BC846
BC846A
BC846B
BC847
transistor 1Bp
1gp transistor
bc848
1Lp marking
code 1gp
1Bp transistor
BC646B
bc847c
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PDF
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transistor 1fp
Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
Text: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification
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OCR Scan
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BC846;
BC847;
BC848
BC856;
BC857;
BC858.
BC846
BC847C
BC846A
transistor 1fp
1FP transistor
BC847
1gp transistor
BC848C
transistor 1fp 11
npn general purpose transistors
1gp npn
code 1gp
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PDF
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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OCR Scan
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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